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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7107TRPBF

Name: IRFH7107TRPBF
Brand: Infineon Technologies
SKU: IRFH7107TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7107TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH7107TRPBF.pdf

Description:: MOSFET N-CH 75V 14A/75A 8PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH7107TRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in a PQFN 5×6 mm package, rated for 75 V V_DS, 75 A continuous drain current at T_C(Bottom) = 25°C, and 8.5 mΩ R_DS(on) @ V_GS = 10 V. It delivers low conduction loss and high power density in secondary-side synchronous rectification and DC-DC brick applications.

For engineers reviewing the IRFH7107TRPBF datasheet, IRFH7107TRPBF pinout, IRFH7107TRPBF application, or IRFH7107TRPBF equivalent, key selection criteria include its 1.2°C/W junction-to-case (bottom) thermal resistance, 48 nC total gate charge, 0.6 Ω gate resistance, 75 V breakdown voltage, and industry-standard PQFN pinout compatibility with multi-vendor designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for high-current, low-R_DS(on) switching in hard-switched and synchronous rectifier topologies. Its 75 V V_DS rating supports 48 V input systems and 60 V bus rails, while the 8.5 mΩ on-resistance ensures <1.5 W conduction loss at 45 A.

The device features a fast body diode with 28–42 ns reverse recovery time and 160–240 nC Q_rr, enabling efficient operation in high-frequency DC-DC converters. Gate drive is optimized for 10 V logic-level control, with V_GS(th) spanning 2.0–4.0 V and negative temperature coefficient of –8.7 mV/°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Supports 48 V nominal input systems with 25% margin for transients
R_DS(on) max @ V_GS = 10 V	8.5 mΩ - Enables ≤1.7 W conduction loss at 45 A, critical for thermal management
I_D @ T_C(Bottom) = 25°C	75 A - Rated for high-current output stages in DC-DC bricks and inverters
Q_g typical	48 nC - Determines gate drive power requirement; compatible with standard 1.8 Ω drivers
R_θJC(Bottom)	1.2 °C/W - Enables direct PCB copper thermal path for >90% of heat extraction
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level controllers
Q_rr	160–240 nC - Low reverse recovery charge reduces switching loss and EMI in synchronous rectifiers

Pinout & Package

PQFN 5 mm × 6 mm, 8-pin, bottom-exposed thermal pad (pin 1 marked), RoHS-compliant, MSL1, industrial qualification.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Parallel source terminals reduce bond-wire inductance and improve current sharing
5, 6, 7, 8	Drain	Exposed drain pad on bottom surface serves as primary thermal and current path to PCB
G	Gate	Single gate terminal with 0.6 Ω internal resistance; optimized for 10 V drive

Key Features

Feature	Design Value
Low R_DS(on)	8.5 mΩ @ 10 V enables ≥95% efficiency in 48 V → 12 V synchronous buck converters at 45 A
Low R_θJC(Bottom)	1.2 °C/W allows direct thermal coupling to 2 oz copper PCBs without heatsinks in 30 W/in² layouts
Low-profile package	0.9 mm height supports ultra-thin power modules and stacked board architectures
Industry-standard pinout	Compatible with IRFH7105, SiR872DP, and other PQFN-8 5×6 mm MOSFETs for drop-in layout reuse

Applications

Secondary Side Synchronous Rectification

Inverters for DC Motors

Use Scenario: High-efficiency 48 V to 12 V isolated DC-DC converter in telecom power supplies.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch replacing Schottky diodes in LLC or phase-shifted full-bridge outputs.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, improving full-load efficiency from 92% to 95.2%.

Use Scenario: 24–48 V brushed DC motor drive in industrial automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge topology controlling bidirectional motor current.

Use Value: 75 A rating supports 3× peak stall current; 8.5 mΩ R_DS(on) limits I²R heating during PWM commutation.

DC-DC Brick Applications

Boost Converters

Use Scenario: Input-stage switch in 36–75 V input, 12 V output 100 W DC-DC brick for server PSUs.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) main switch in non-isolated buck or buck-boost regulator.

Use Value: 1.2 °C/W R_θJC sustains 75 A continuous operation with ≤65°C case rise on 4-layer PCB.

Use Scenario: Boost switch in automotive 12 V → 48 V mild-hybrid power converter.

IC Role / Device Role / Timing Role: Main energy-transfer switch operating at 200–500 kHz with 75 V blocking capability.

Use Value: 48 nC Q_g and 0.6 Ω R_G enable clean 10 ns rise/fall times with minimal gate driver loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 7.0 mΩ @ 10 V; Q_g = 52 nC; R_θJC = 1.1 °C/W	Slightly lower R_DS(on) but higher gate charge increases driver loss at >300 kHz	Preferred for ultra-high-efficiency, low-frequency (<200 kHz) bricks where conduction dominates
IRFH7007TRPBF	V_DS = 60 V; R_DS(on) = 7.2 mΩ @ 10 V; same PQFN 5×6 mm footprint	Lower voltage rating restricts use to ≤48 V systems; unsuitable for 75 V transient-tolerant designs	Select only when system max V_IN is strictly ≤50 V and space-constrained layout requires identical footprint

Compared with SiR872DP-T1-GE3 and IRFH7007TRPBF, IRFH7107TRPBF offers optimal balance of 75 V robustness, 8.5 mΩ R_DS(on), and 48 nC Q_g for 200–500 kHz synchronous rectifiers and DC-DC bricks requiring transient margin and thermal headroom.

Availability

IRFH7107TRPBF is available at Aetrix Electronics and suitable for secondary side synchronous rectification, DC-DC brick applications, and boost converters requiring stable component supply across industrial, telecom, and automotive power designs.

Supply support for IRFH7107TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to Infineon's OptiMOS™ Trench 6 family of high-performance power MOSFETs, designed specifically for high-current, high-efficiency DC-DC conversion and motor drive applications demanding low R_DS(on) and fast switching.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH7107TRPBF supports 11 A continuous drain current at T_C(Bottom) = 100°C per the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package's bottom thermal interface under sustained high-temperature operation without forced airflow.

Does this MOSFET include an integrated body diode, and what are its key parameters?

Yes, it integrates a planar p-n junction body diode with V_SD = 1.3 V max at 45 A, t_rr = 28–42 ns, and Q_rr = 160–240 nC at T_J = 25°C. These values are measured under V_DD = 38 V, I_F = 45 A, and di/dt = 500 A/μs conditions, confirming suitability for synchronous rectification.

Is IRFH7107TRPBF suitable for avalanche-rated operation?

Yes - it is characterized for unclamped inductive switching with EAS = 106 mJ at I_AS = 5.9 A and T_J = 25°C. The datasheet provides SOA curves up to 100 μs pulse width, supporting design of robust protection in motor drive and flyback circuits without external snubbers.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 2.0 V to 4.0 V at T_J = 25°C, with a temperature coefficient of –8.7 mV/°C. At 125°C, typical V_GS(th) drops to ~2.8 V, ensuring consistent turn-on behavior across industrial temperature ranges without overdrive risk.

IRFH7107TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3110 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH7107TRPBF FAQ

1.How can I place an order for IRFH7107TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7107TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7107TRPBF reliable?

The price and inventory of IRFH7107TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7107TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH7107TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7107TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7107TRPBF?

IRFH7107TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7107TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7107TRPBF?

For technical support, including IRFH7107TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7107TRPBF requirements.

6.How does Aetrix verify that IRFH7107TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH7107TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7107TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH7107TRPBF?

All IRFH7107TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7107TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7107TRPBF part is unused and in its original packaging.

Return procedure for IRFH7107TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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