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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7110TR2PBF

Name: IRFH7110TR2PBF
Brand: Infineon Technologies
SKU: IRFH7110TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7110TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TQFN Exposed Pad

Datasheet:: IRFH7110TR2PBF.pdf

Description:: MOSFET N CH 100V 11A PQFN5X6

Quantity:: RFQ Add To RFQ list

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Inventory:9,523

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Product details

Overview

IRFH7110TR2PBF from Infineon Technologies is a 100 V, 50 A N-channel enhancement-mode HEXFET Power MOSFET in a PQFN 5×6 mm package with 13.5 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency secondary-side synchronous rectification and DC-DC brick applications.

For engineers reviewing the IRFH7110TR2PBF datasheet, IRFH7110TR2PBF pinout, IRFH7110TR2PBF application, or IRFH7110TR2PBF equivalent, key selection criteria include low thermal resistance (1.2 °C/W junction-to-case bottom), industry-standard pinout compatibility, and fast switching performance (Q_g = 58 nC, t_f = 18 ns).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and high current density in a low-profile (0.9 mm) PQFN package. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) enables robust 10 V gate drive compatibility while maintaining stable operation across –55 °C to +150 °C junction temperature range.

The device integrates a fast body diode with t_rr = 27–41 ns and Q_rr = 140–210 nC, supporting high-frequency hard-switching topologies. Thermal design is enabled by direct bottom-side copper thermal path (R_θJC(bottom) = 1.2 °C/W) and MSL1 industrial qualification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V input DC-DC bricks and 100 V bus inverters without derating
R_DS(on) max @ 10 V	13.5 mΩ - enables ≤1.35 W conduction loss at 50 A continuous drain current
I_D @ T_C(bottom) = 25°C	50 A - rated for full-load operation with PCB-mounted heatsinking
Q_g typical	58 nC - determines gate driver power requirement and switching speed in 100–500 kHz converters
R_θJC(bottom)	1.2 °C/W - allows direct thermal coupling to copper pour or heatsink for <10 °C rise at 50 W dissipation
V_GS(th)	2.0–4.0 V - ensures reliable turn-on with standard 3.3 V/5 V logic-level controllers
t_f	18 ns - minimizes switching losses during turn-off in synchronous rectifier mode

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom surface; lead-free, RoHS-compliant, MSL1 rating; 0.9 mm profile enables high-power density layouts in space-constrained DC-DC modules.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Power return path and body diode cathode	Internally connected to thermal pad; must be soldered to large PCB copper area for thermal and electrical integrity
Drain (D)	Main power output node	Top-side metal pad; connects to high-side switch node or transformer secondary winding
Gate (G)	Control input for channel conduction	Low-capacitance input (C_iss = 3240 pF); requires gate resistor (RG ≈ 0.6 Ω typical) to damp ringing

Key Features

Feature	Design Value
Low R_DS(on)	10.6 mΩ typical at 25°C - reduces I²R losses in high-current synchronous rectifiers
Low-profile PQFN	0.9 mm height - enables stacking of multiple power stages in compact brick form factors
Industry-standard pinout	3-pin D-S-G layout matching common MOSFET footprints - simplifies multi-vendor board reuse
Enhanced body diode	t_rr = 27 ns, Q_rr = 140 nC - minimizes reverse recovery loss and EMI in hard-switched converters
MSL1 qualification	Moisture sensitivity level 1 - eliminates bake requirements before reflow, improving manufacturing yield

Applications

Secondary Side Synchronous Rectification

Inverters for DC Motors

Use Scenario: High-efficiency 48 V to 12 V isolated DC-DC converter in telecom power supply.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in LLC or phase-shifted full-bridge topology.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, enabling >96% efficiency at 50 A load with minimal heatsink.

Use Scenario: 24–48 V brushed DC motor drive in industrial automation.

IC Role / Device Role / Timing Role: H-bridge low-side switch controlling motor direction and PWM speed regulation.

Use Value: Supports 50 A continuous current with <1.5 °C/W thermal path, eliminating external heatsinks in enclosed enclosures.

DC-DC Brick Applications

Boost Converters

Use Scenario: 36–75 V input, 12 V/40 A output quarter-brick DC-DC module.

IC Role / Device Role / Timing Role: Primary-side high-side switch in two-switch forward or active clamp forward topology.

Use Value: With 100 V V_DS rating and 13.5 mΩ R_DS(on), sustains 100 V transient spikes while limiting switching loss at 300 kHz.

Use Scenario: 12 V to 48 V boost converter for PoE++ midspan power sourcing.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 50 A peak inductor current.

Use Value: Fast t_f = 18 ns and low Q_gd = 16 nC reduce Miller-induced shoot-through risk and improve light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7110TRPBF	Same die, 4000-piece tape-and-reel packaging vs. 400-piece for TR2PBF	No functional difference; suited for high-volume production runs	Select TRPBF for cost-sensitive mass production; TR2PBF for prototyping and low-volume builds
IPB110N10N3 G	100 V, 110 A, R_DS(on) = 9.5 mΩ, TO-263 package, higher Q_g = 85 nC	Larger footprint and higher gate drive demand; better for lower-frequency, higher-current designs	Choose IPB110N10N3G when thermal budget allows TO-263 and peak current exceeds 60 A

Compared with IRFH7110TR2PBF, IRFH7110TRPBF offers identical electrical performance with bulk packaging, while IPB110N10N3G trades lower R_DS(on) and higher current capability for larger size and slower switching-making the IRFH7110TR2PBF optimal for space-constrained, high-frequency synchronous rectification.

Availability

IRFH7110TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick applications, and boost converters requiring stable component supply and consistent PQFN 5×6 mm footprint availability.

Supply support for IRFH7110TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with decades of expertise in silicon-based power devices.

This part belongs to Infineon's OptiMOS™ family of high-performance MOSFETs, engineered specifically for high-efficiency, high-density power conversion in server, telecom, and industrial DC-DC systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH7110TR2PBF supports 24 A continuous drain current at T_C(bottom) = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under sustained high-temperature PCB conditions and assumes adequate copper area for heat spreading.

Does this MOSFET require a negative gate voltage for safe turn-off?

No. The device has a gate threshold voltage range of 2.0–4.0 V and is fully enhanced at 0 V gate-source bias. A negative gate voltage is not required; however, driving gate to –5 V improves noise immunity in noisy environments without damaging the gate oxide.

Can IRFH7110TR2PBF be used in parallel configurations?

Yes. Its positive temperature coefficient of R_DS(on) (see Fig 4) ensures inherent current sharing stability. For parallel operation, match gate drive loop inductance and use individual gate resistors (≥1 Ω) to suppress oscillation between paralleled devices.

Is the thermal pad electrically isolated from the drain terminal?

No. The exposed thermal pad is internally connected to the drain (D) terminal. It must be soldered to a drain-connected copper pour on the PCB to ensure both thermal performance and electrical safety-no isolation or dielectric layer is permitted beneath the pad.

IRFH7110TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-TQFN Exposed Pad

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 3240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH7110TR2PBF FAQ

1.How can I place an order for IRFH7110TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7110TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7110TR2PBF reliable?

The price and inventory of IRFH7110TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7110TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH7110TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7110TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7110TR2PBF?

IRFH7110TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7110TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7110TR2PBF?

For technical support, including IRFH7110TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7110TR2PBF requirements.

6.How does Aetrix verify that IRFH7110TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH7110TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7110TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH7110TR2PBF?

All IRFH7110TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7110TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7110TR2PBF part is unused and in its original packaging.

Return procedure for IRFH7110TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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