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Infineon Technologies IRFH7110TRPBF
- Part No.:
- IRFH7110TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TQFN Exposed Pad
- Datasheet:
-
IRFH7110TRPBF.pdf
- Description:
- MOSFET N-CH 100V 11A/58A 8PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,516
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Product details
Overview
IRFH7110TRPBF from Infineon Technologies is a 100 V, 50 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, featuring 13.5 mΩ RDS(on) at VGS = 10 V, 58 nC total gate charge, and 1.2 °C/W junction-to-case (bottom) thermal resistance. It is engineered for high-efficiency secondary-side synchronous rectification in isolated DC-DC converters.
For engineers reviewing the IRFH7110TRPBF datasheet, IRFH7110TRPBF pinout, IRFH7110TRPBF application, or IRFH7110TRPBF equivalent, key selection criteria include low conduction loss (RDS(on) ≤ 13.5 mΩ), fast switching (Qgd = 16 nC), robust avalanche capability (EAS = 400 mJ), and thermally optimized bottom-side cooling in space-constrained power stages.
Technical Context
This device employs a trench-gated silicon MOSFET structure optimized for high-current, high-frequency DC-DC conversion. Its 100 V VDS rating supports wide-input industrial and telecom brick applications, while its 0.6 Ω gate resistance and 58 nC Qg enable controlled turn-on/turn-off with minimal driver loss.
The PQFN 5×6 mm package integrates exposed copper die paddle on the bottom surface, delivering 1.2 °C/W RθJC(bottom) to PCB and enabling >50 A continuous current at TC(bottom) = 25 °C. The body diode exhibits 1.3 V forward voltage and 27–41 ns reverse recovery time under specified conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports input ranges up to 48 V nominal bus with safety margin for transients in telecom/industrial DC-DC bricks. |
| RDS(on) max @ VGS = 10 V | 13.5 mΩ - Enables <1.3 W conduction loss at 35 A, critical for >95% efficiency in synchronous rectifiers. |
| Qg typical | 58 nC - Determines gate drive energy requirement; pairs with 0.6 Ω RG for predictable 11 ns td(on) and 22 ns td(off). |
| ID @ TC(bottom) = 25 °C | 50 A - Continuous current rating defined with direct PCB thermal path, not ambient-limited; enables compact heatsinking. |
| RθJC(bottom) | 1.2 °C/W - Confirmed thermal path from junction to PCB via exposed paddle; allows >40 W dissipation before exceeding 150 °C TJ. |
| VGS(th) | 2.0–4.0 V - Ensures reliable turn-on with standard 5 V or 10 V gate drivers; negative temperature coefficient (-9 mV/°C) improves current sharing. |
| EAS | 400 mJ - Single-pulse avalanche energy at ID = 35 A; supports unclamped inductive switching in hard-switched topologies. |
Pinout & Package
PQFN 5×6 mm package with exposed thermal pad on bottom surface and industry-standard pinout: three terminals-Drain (D), Source (S), and Gate (G)-arranged in a single-row configuration compatible with multi-vendor layout footprints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal connected to internal MOSFET channel | Electrically tied to exposed copper paddle; must be soldered to large PCB copper pour for thermal and electrical integrity. |
| Source (S) | Reference node for gate drive and current return path | Connected to all source bond wires and internal substrate; forms low-inductance return for synchronous rectifier switch node. |
| Gate (G) | Control terminal modulating channel conductivity | High-impedance input requiring <100 nA leakage; sensitive to ESD; routed away from noisy power traces per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 10.6 mΩ typical at VGS = 10 V and TJ = 25 °C - reduces I²R losses in high-current synchronous rectification paths. |
| Low-profile package | 0.9 mm height - enables ultra-thin power modules and improves airflow clearance in stacked board assemblies. |
| MSL1 rating | Moisture Sensitivity Level 1 - eliminates bake requirements prior to reflow, reducing manufacturing cost and risk of voiding thermal interface. |
| RoHS-compliant construction | No lead, bromide, or halogen - meets IPC-1752A environmental compliance for global OEM shipments without exemptions. |
| Industry-standard pinout | Compatible with common PQFN 5×6 footprint libraries - avoids redesign when substituting across vendors in production BOMs. |
Applications
| Secondary-Side Synchronous Rectification | Inverter for Brushless DC Motors |
|---|---|
Use Scenario: Used as the low-side switch in isolated LLC or phase-shifted full-bridge DC-DC converters delivering 12–24 V output at >100 A. IC Role / Device Role / Timing Role: Power MOSFET acting as actively controlled rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency. Use Value: Achieves >0.8% absolute efficiency gain over 40 V Schottky diodes at 35 A load due to 13.5 mΩ RDS(on) and fast body diode recovery (trr = 27 ns). | Use Scenario: Integrated into 3-phase inverter half-bridges driving 24–48 V BLDC motors in industrial pumps and HVAC fans. IC Role / Device Role / Timing Role: High-current N-channel switch in leg topology; operated with complementary PWM to control motor phase current direction and magnitude. Use Value: Delivers 50 A continuous current with 1.2 °C/W thermal resistance, enabling air-cooled inverters without forced convection at 40 °C ambient. |
| DC-DC Brick Power Stage | Boost Converter for Telecom Power Systems |
Use Scenario: Primary or secondary switch in 1/4-brick or 1/8-brick DC-DC modules converting 36–75 V input to 12 V or 5 V outputs. IC Role / Device Role / Timing Role: High-frequency switching element operating at 200–500 kHz; paired with SiC diodes or complementary MOSFETs. Use Value: Low Qg (58 nC) and Qgd (16 nC) minimize switching loss at 300 kHz, supporting >94% full-load efficiency in 100 W/in³ designs. | Use Scenario: Boost switch in front-end PFC or intermediate bus converters handling 48 V input to 12 V/24 V output in telecom shelf systems. IC Role / Device Role / Timing Role: Main power switch subjected to high dV/dt and repetitive avalanche stress during line transients. Use Value: Rated for 100 V VDS and 400 mJ EAS, sustaining repeated 60 V–80 V overshoot events without degradation in 48 V systems. |
Availability
IRFH7110TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick power stages, and BLDC motor inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRFH7110TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
This part belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-density DC-DC conversion and motor drive applications where low RDS(on), fast switching, and robust thermal performance are essential.
FAQ
What is the maximum continuous drain current for IRFH7110TRPBF at 100 °C case temperature?
At TC(bottom) = 100 °C, the maximum continuous drain current is 24 A, derated linearly from 50 A at 25 °C using the published 0.029 W/°C derating factor and 240 W package power limit. This reflects real thermal constraints when PCB copper area is limited.
Does IRFH7110TRPBF have integrated gate protection?
No, IRFH7110TRPBF does not include integrated gate Zener clamping or series resistance. External gate resistors (recommended 5–10 Ω) and TVS diodes are required to limit VGS to ±20 V and suppress ringing during fast switching in high-dV/dt environments.
Can IRFH7110TRPBF be used in parallel configurations?
Yes - its negative VGS(th) temperature coefficient (-9 mV/°C) promotes natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and shared thermal interface to maintain ΔTJ < 5 °C between devices.
Is the body diode suitable for reverse recovery in synchronous rectifier operation?
Yes - the body diode has trr = 27–41 ns and Qrr = 140–210 nC at IF = 35 A, enabling zero-voltage switching (ZVS) in resonant topologies. However, it is not optimized for high-frequency freewheeling; external Schottky bypass may be needed above 1 MHz.
IRFH7110TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 87 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3240 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
IRFH7110TRPBF FAQ
1.How can I place an order for IRFH7110TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7110TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7110TRPBF reliable?
The price and inventory of IRFH7110TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7110TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH7110TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7110TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7110TRPBF?
IRFH7110TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7110TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7110TRPBF?
For technical support, including IRFH7110TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7110TRPBF requirements.
6.How does Aetrix verify that IRFH7110TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH7110TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7110TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH7110TRPBF?
All IRFH7110TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7110TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7110TRPBF part is unused and in its original packaging.
Return procedure for IRFH7110TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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