Infineon Technologies IRFH7182TRPBF

Overview

IRFH7182TRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 157 A N-channel PQFN 5×6 mm FastIRFET™ Power MOSFET optimized for high-frequency synchronous rectification and primary-side switching in telecom DC-DC supplies. It delivers 3.9 mΩ R_DS(on) at V_GS = 10 V, 49 nC total gate charge, and 0.64 °C/W junction-to-case thermal resistance via bottom-side thermal pad.

For engineers reviewing the IRFH7182TRPBF datasheet, IRFH7182TRPBF pinout, IRFH7182TRPBF application, or IRFH7182TRPBF equivalent, key selection criteria include low-conduction-loss capability in high-current secondary-side rectifiers, fast switching performance with 6.1 ns turn-on delay and 5.3 ns fall time, and MSL1 reliability for lead-free reflow assembly.

Technical Context

This device employs a trench-gate silicon process with optimized cell pitch and reduced gate-drain charge (Q_gd = 15.8 nC) to enable efficient operation in hard-switched and resonant topologies up to 1 MHz. Its low R_DS(on) and 1.05 mm profile support high power density in space-constrained telecom and motor drive PCBs.

The integrated body diode exhibits 65 ns reverse recovery time and 113 nC Q_rr, making it suitable for synchronous rectification where diode conduction must be tightly controlled. Thermal design leverages direct bottom-side copper contact-R_θJC(bottom) = 0.64 °C/W-enabling >150 A continuous current at T_C = 25°C.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "F" package with exposed thermal pad on bottom surface and industry-standard pinout: Source terminals occupy pins 1–3 and 5–7; Gate on pin 4; Drain connected to bottom thermal pad (electrically and thermally).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRFH7182TRPBF, IRFH7185TRPBF trades 0.8 mΩ higher R_DS(on) for lower cost, while SiR626DP offers near-identical conduction but requires larger thermal pad area to match junction temperature rise.

Availability

IRFH7182TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, synchronous rectification modules, hot-swap controllers, and BLDC motor drives requiring stable component supply and MSL1-compliant packaging.

Supply support for IRFH7182TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

This device belongs to the FastIRFET™ family-designed specifically for high-frequency, high-current power conversion in telecom infrastructure, server power supplies, and motor control systems where low gate charge and ultra-low R_DS(on) are essential.

FAQ

What is the maximum continuous drain current for IRFH7182TRPBF at 100°C case temperature?

The maximum continuous drain current is 99 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PQFN 5×6 mm package under real-world PCB thermal conditions-not ambient temperature ratings-and assumes proper thermal pad soldering per AN-1136 guidelines.

Does IRFH7182TRPBF require an external gate resistor for typical 10 V gate drive?

Not necessarily: the device integrates a typical 0.9 Ω gate resistance, which damps ringing and stabilizes switching in most 500 kHz–1 MHz applications. However, an external 2–5 Ω resistor is recommended when driving from low-impedance sources or paralleling multiple units to balance gate voltage rise/fall times.

Can IRFH7182TRPBF be used in avalanche-rated circuits?

Yes-it is characterized for unclamped inductive switching with E_AS = 728 mJ (T_J = 25°C) and I_AR = 38 A. These values assume strict adherence to test conditions (L = 1 mH, R_G = 50 Ω, pulse width ≤ 100 µs); operation outside these limits requires empirical validation per JEDEC JESD24-11.

Is the bottom thermal pad electrically connected to the drain terminal?

Yes-the exposed copper pad on the underside of the PQFN 5×6 mm package is internally connected to the drain (D) terminal and serves as both the primary electrical drain connection and main thermal path. PCB layout must assign this pad exclusively to the drain net and avoid isolation or stitching vias that compromise thermal or electrical integrity.