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Infineon Technologies IRFH7184TRPBF
- Part No.:
- IRFH7184TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IRFH7184TRPBF.pdf
- Description:
- MOSFET N-CH 100V 20A/128A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,095
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Product details
Overview
IRFH7184TRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 128 A (TC = 25°C), N-channel enhancement-mode Power MOSFET in PQFN 5×6 mm package, featuring 4.8 mΩ RDS(on) @ VGS = 10 V, 36 nC typical Qg, and 1.2 Ω typical gate resistance - optimized for high-frequency synchronous rectification and telecom DC-DC primary switching.
For engineers reviewing the IRFH7184TRPBF datasheet, IRFH7184TRPBF pinout, IRFH7184TRPBF application, or IRFH7184TRPBF equivalent, key selection criteria include low thermal resistance to PCB (<0.8 °C/W), MSL1 reliability rating, industry-standard pinout compatibility, and validated avalanche energy (360 mJ) for unclamped inductive switching robustness.
Technical Context
This MOSFET employs a trench-gate FastIRFET™ process enabling fast switching with low Qgd/Qg ratio (11 nC / 36 nC) and reduced reverse recovery charge (Qrr = 76 nC typ). Its low-profile PQFN package delivers <1.05 mm height and junction-to-case (bottom) thermal resistance of 0.8 °C/W.
The device integrates an intrinsic body diode with 55 ns typical trr, 0.8–1.3 V forward voltage at 50 A, and supports hot-swap and active OR-ing via precise threshold control (VGS(th) = 2.0–3.6 V) and tight Rg tolerance (1.2 ± 0.5 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage without breakdown. |
| RDS(on) max @ VGS = 10 V | 4.8 mΩ - Enables <1.3 W conduction loss at 50 A, critical for high-efficiency power stages. |
| Qg typical | 36 nC - Determines gate drive power requirement and switching speed in hard-switched topologies. |
| ID @ TC = 25°C | 128 A - Continuous current capability when mounted on thermally optimized PCB with bottom-side cooling. |
| RθJC (bottom) | 0.8 °C/W - Enables high-power operation with minimal junction temperature rise under PCB copper heatsinking. |
| VGS(th) | 2.0–3.6 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. |
| EAS | 360 mJ - Supports single-pulse unclamped inductive switching up to 50 A without failure. |
Pinout & Package
PQFN 5×6 mm Outline "B" package with exposed drain pad (D) on bottom side for thermal and electrical connection; surface-mount footprint compatible with IPC-7351B standard; MSL1 moisture sensitivity level.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) – Exposed Pad | Main current path output / heat sink interface | Electrically and thermally connected to internal die drain; requires full-solder coverage to PCB ground plane. |
| Source (S) – Pins 1, 2, 3, 4, 5, 6, 7, 8 | Return path for load current / reference node | Eight parallel source terminals minimize source inductance and improve current sharing in high-di/dt applications. |
| Gate (G) – Pin 9 | Control input for channel conduction | Single low-inductance gate terminal positioned adjacent to source pins to reduce ringing and improve drive stability. |
Key Features
| Feature | Design Value |
|---|---|
| Internal snubber | Reduces VDS voltage spikes during turn-off, lowering EMI filter component count and board area. |
| Low profile (<1.05 mm) | Enables ultra-thin power modules and improves airflow in stacked board assemblies. |
| Industry-standard pinout | Ensures drop-in replacement across multiple vendors' 5×6 PQFN MOSFETs without layout redesign. |
| 100% Rg tested | Guarantees gate resistance within 1.2–2.2 Ω range, enabling predictable drive loop damping and timing. |
| RoHS-compliant, halogen-free | Meets IPC-1752A environmental compliance requirements for industrial and telecom equipment. |
Applications
| Secondary Side Synchronous Rectification | High-Frequency Telecom DC-DC Primary Switch |
|---|---|
|
Use Scenario: Used as secondary-side switch in isolated LLC or phase-shifted full-bridge converters delivering 48 V/60 V output at >300 kHz switching frequency. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction losses and improve efficiency by 2–4% at full load. Use Value: 4.8 mΩ RDS(on) and 55 ns trr minimize both static and dynamic losses during synchronous rectification. |
Use Scenario: Primary-side high-side switch in 48 V input telecom DC-DC bricks operating at 500 kHz with 100 V bus margin. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switching element handling peak currents >100 A in hard-switched topologies. Use Value: 128 A continuous rating at TC = 25°C and 0.8 °C/W RθJC enable compact thermal design without forced air. |
| Hot Swap and Active OR-ing | BLDC Motor Drive Phase Leg |
|
Use Scenario: Back-to-back configuration in redundant 12 V/48 V power distribution units for server and storage systems. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch with fast turn-on/off to prevent backfeed and support seamless switchover. Use Value: Tight VGS(th) tolerance (2.0–3.6 V) and low Qg ensure precise gate control and sub-100 ns switching transitions. |
Use Scenario: Upper/lower switch in three-phase BLDC inverter driving 1–3 kW industrial fans or pumps. IC Role / Device Role / Timing Role: High-current, low-loss power stage transistor subjected to repetitive avalanche stress during commutation. Use Value: 360 mJ rated EAS and rugged body diode (Qrr = 76 nC) sustain motor inductive kickback without external clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRFH7185TRPBF | 100 V, 4.0 mΩ RDS(on), 42 nC Qg, same PQFN 5×6 package | Higher conduction efficiency but increased gate drive loss; better suited for lower-frequency, higher-current designs | Select when RDS(on) reduction outweighs Qg-driven switching loss increase. |
| Vishay SiR626DP | 100 V, 4.7 mΩ RDS(on), 32 nC Qg, PowerPAK® 5×6 | Lower Qg enables faster switching; slightly higher RθJA (36 °C/W vs. 32 °C/W) | Prefer for high-frequency (>1 MHz) telecom supplies where gate charge dominates total loss. |
Compared with IRFH7184TRPBF, IRFH7185TRPBF trades 0.8 mΩ lower RDS(on) for +6 nC Qg, while SiR626DP offers tighter Qg control at marginally higher conduction loss - choice depends on whether conduction or switching loss dominates the target operating point.
Availability
IRFH7184TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC power supplies, BLDC motor drives, and hot-swap power distribution systems requiring stable component supply, long-term lifecycle support, and MSL1-reliable packaging.
Supply support for IRFH7184TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to Infineon's FastIRFET™ portfolio, engineered specifically for high-efficiency, high-frequency power conversion in telecom, server, and motor control applications where low Qg/RDS(on) ratio and robust thermal performance are critical.
FAQ
What is the maximum continuous drain current for IRFH7184TRPBF at 100°C case temperature?
The maximum continuous drain current is 81 A at TC = 100°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects derating due to thermal resistance and safe operating area limits, not package current-carrying capacity alone.
Does IRFH7184TRPBF require a gate resistor for stable switching?
Yes - a gate resistor (typically 1–5 Ω) is required to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The datasheet specifies Rg = 1.2 Ω typical, and switching time test circuits use RG = 1.0 Ω, confirming its necessity for controlled dV/dt and EMI compliance.
Can IRFH7184TRPBF be used in avalanche mode repeatedly?
No - the 360 mJ EAS rating applies only to single-pulse unclamped inductive switching. Repetitive avalanche operation is not characterized or guaranteed; sustained inductive energy must be clamped externally or managed via topology-level protection.
Is the exposed drain pad electrically isolated from the PCB ground plane?
No - the exposed drain pad is internally connected to the MOSFET's drain terminal and must be soldered directly to a PCB copper pour tied to the main power rail or system ground, depending on circuit topology. It serves both electrical conduction and thermal dissipation functions.
IRFH7184TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FASTIRFET™, HEXFET®
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta), 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2320 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.9W (Ta), 156W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PQFN (5x6)
IRFH7184TRPBF FAQ
1.How can I place an order for IRFH7184TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7184TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7184TRPBF reliable?
The price and inventory of IRFH7184TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7184TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH7184TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7184TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7184TRPBF?
IRFH7184TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7184TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7184TRPBF?
For technical support, including IRFH7184TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7184TRPBF requirements.
6.How does Aetrix verify that IRFH7184TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH7184TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7184TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH7184TRPBF?
All IRFH7184TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7184TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7184TRPBF part is unused and in its original packaging.
Return procedure for IRFH7184TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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