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Infineon Technologies IRFH7185TRPBF
- Part No.:
- IRFH7185TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IRFH7185TRPBF.pdf
- Description:
- MOSFET N CH 100V 19A 8QFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,282
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Product details
Overview
IRFH7185TRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 123 A PQFN 5×6 mm N-channel enhancement-mode power MOSFET optimized for high-frequency DC-DC conversion. It delivers RDS(on) = 4.2 mΩ (typ) at VGS = 10 V, Qg = 36 nC (typ), and Rg = 1.2 Ω, enabling low conduction and switching losses in telecom primary-side switches and synchronous rectifiers.
For engineers reviewing the IRFH7185TRPBF datasheet, IRFH7185TRPBF pinout, IRFH7185TRPBF application, or IRFH7185TRPBF equivalent, key selection criteria include its 0.8 °C/W junction-to-case thermal resistance, MSL1 rating, 100% Rg tested reliability, and industry-standard PQFN 5×6 pinout compatibility with multi-vendor board layouts.
Technical Context
This FastIRFET™ device uses trench-gate silicon technology to achieve ultra-low RDS(on) and fast switching with minimized gate charge. Its PQFN 5×6 mm package features exposed drain pad on bottom side for direct PCB thermal coupling and integrated source/ground terminals for low-inductance layout.
The MOSFET supports unclamped inductive switching with EAS = 360 mJ (single-pulse) and operates across –55°C to +150°C junction temperature range. Body diode parameters-VSD = 0.8 V (typ) at IS = 50 A, trr = 63 ns (typ)-are specified for synchronous rectification and active OR-ing applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source voltage, suitable for 48 V/60 V telecom bus systems with margin. |
| RDS(on) max @ VGS = 10 V | 5.2 mΩ - Limits conduction loss to ≤0.32 W at 123 A continuous drain current under ideal thermal conditions. |
| Qg typical | 36 nC - Enables efficient gate drive with <1.5 µC per MHz of switching frequency in hard-switched topologies. |
| RθJC (Bottom) | 0.8 °C/W - Allows >160 W power dissipation with ≤128 °C temperature rise from case to junction under forced convection. |
| ID @ TC(Bottom) = 25°C | 123 A - Rated continuous current assuming bottom-side heatsinking via PCB copper area, not ambient air. |
| tr/tf | 9.9 ns / 3.9 ns - Supports >1 MHz switching in resonant and phase-shifted full-bridge converters without excessive switching loss penalty. |
| Ciss/Coss/Crss | 2320 pF / 1070 pF / 19 pF - Low reverse transfer capacitance minimizes Miller-induced shoot-through risk in high-dV/dt environments. |
Pinout & Package
PQFN 5×6 mm (Outline "B") package with exposed drain pad on bottom surface; 8-pin configuration with 3-source, 3-drain, 1-gate, and 1-source sense terminal. Thermal path optimized for soldered PCB interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D1–D3) | Main current-carrying terminal (connected to exposed pad) | Low-inductance, high-current path to PCB ground plane; primary thermal conduction path. |
| Source (S1–S3) | Reference node for channel conduction and gate drive return | Multiple parallel pins reduce source inductance, critical for minimizing VGS ringing during fast switching. |
| Gate (G) | Control electrode for channel modulation | Single-input gate terminal compatible with standard 10 V logic-level drivers; Rg = 1.2 Ω verified per unit. |
| Source Sense (SS) | Kelvin connection for accurate gate-source voltage sensing | Enables precise RDS(on)-based current monitoring and closed-loop gate drive compensation in high-accuracy PSUs. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) (< 5.2 mΩ) | Reduces I²R conduction loss by ≥35% vs. comparable 100 V MOSFETs in 50–100 A telecom power stages. |
| Low RθJC (< 0.8 °C/W) | Permits >2× higher power density than SO-8 or DPAK packages at same PCB area and cooling conditions. |
| MSL1 rating | Eliminates pre-bake requirement before reflow, reducing manufacturing cycle time and moisture-related assembly defects. |
| 100% Rg tested | Ensures consistent gate drive timing and eliminates batch-to-batch variation in turn-on/turn-off delay matching. |
| RoHS-compliant, halogen-free | Meets IPC-J-STD-609A Class 1 requirements for bromine/chlorine content, supporting green electronics compliance programs. |
Applications
| Telecom DC-DC Primary Switch | Synchronous Rectifier |
|---|---|
Use Scenario: High-efficiency 48 V input, 12 V output isolated forward converter operating at 300–500 kHz. IC Role / Device Role / Timing Role: Main switching transistor in primary-side power stage, driven by PWM controller with 10 V gate drive. Use Value: 4.2 mΩ RDS(on) and 36 nC Qg jointly reduce total power loss to <1.8 W at 100 A load, improving system efficiency by 1.2% over legacy TO-220 devices. |
Use Scenario: Secondary-side synchronous rectification in 48 V–12 V LLC resonant converter for server power supplies. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode, controlled by dedicated SR controller with adaptive dead-time management. Use Value: VSD = 0.8 V body diode forward drop and trr = 63 ns enable zero-voltage switching recovery, cutting rectifier loss by 65% vs. 40 V Schottky. |
| Hot Swap Controller | Active OR-ing Circuit |
Use Scenario: Inrush-limited 60 V backplane insertion in modular telecom shelf with redundant power inputs. IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by hot-swap IC (e.g., LTC4215), operating in linear mode during startup. Use Value: 123 A continuous rating and 0.8 °C/W RθJC allow safe 500 ms inrush limiting at 80 A without thermal shutdown, meeting GR-1089 Class B surge immunity. |
Use Scenario: Redundant 48 V power rail combining from two independent DC sources in network routers. IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET pair acting as bidirectional ideal diode, controlled by OR-ing controller (e.g., LM5050). Use Value: Low RDS(on) ensures <25 mV forward voltage drop at 60 A, reducing power loss by 3.6 W per rail vs. discrete diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N10N5 | RDS(on) = 4.0 mΩ (typ), Qg = 42 nC, TO-220FP package, RθJC = 1.2 °C/W | Higher thermal resistance limits continuous current to 95 A at same PCB area; requires heatsink for >60 A operation. | Select when mechanical mounting constraints favor through-hole or when lower gate charge tolerance is acceptable for reduced EMI. |
| Vishay SiR626DP | RDS(on) = 4.7 mΩ (typ), Qg = 32 nC, PowerPAK® 5×6, RθJC = 0.95 °C/W | Slightly higher RDS(on) increases conduction loss by ~12% at 100 A; identical footprint enables drop-in replacement on most layouts. | Prefer when tighter gate charge budget is required or when Vishay's qualified supply chain offers better lead time for production ramp. |
Compared with IPP040N10N5 and SiR626DP, IRFH7185TRPBF provides the lowest thermal resistance and best RDS(on)/Qg trade-off for space-constrained, high-power-density telecom and server power designs requiring >100 A continuous capability without external heatsinks.
Availability
IRFH7185TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server power supplies, and industrial hot-swap modules requiring stable component supply, RoHS/halogen-free compliance, and MSL1 reflow readiness.
Supply support for IRFH7185TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and sensor solutions with strong focus on energy efficiency and industrial reliability.
This device belongs to Infineon's FastIRFET™ family-engineered specifically for high-frequency, high-current power conversion in telecom infrastructure, data center PSUs, and industrial motor drives where low RDS(on), fast switching, and robust thermal performance are critical.
FAQ
What is the maximum continuous drain current for IRFH7185TRPBF at 100°C case temperature?
The datasheet specifies ID = 78 A at TC(Bottom) = 100°C and VGS = 10 V. This reflects derating due to thermal resistance and junction temperature limits; actual achievable current depends on PCB copper area, airflow, and thermal vias under the exposed drain pad.
Does IRFH7185TRPBF require a gate resistor for reliable operation?
A gate resistor is recommended to dampen ringing and control dV/dt, especially in hard-switched topologies. The device's Rg = 1.2 Ω (tested) is internal; external RG values between 2.2 Ω and 10 Ω are typical to balance switching speed and EMI, depending on driver strength and layout parasitics.
Can IRFH7185TRPBF be used in avalanche-rated applications?
Yes-it is characterized for unclamped inductive switching with EAS = 360 mJ (single-pulse) at TJ = 25°C. Operation in repetitive avalanche requires careful thermal design and pulse-width limitation; refer to Fig 12 and Fig 14 in the datasheet for safe operating boundaries.
Is the PQFN 5×6 package of IRFH7185TRPBF compatible with standard reflow profiles?
Yes-its MSL1 rating certifies suitability for standard lead-free reflow (J-STD-020) without baking. Peak temperature must not exceed 260°C, and time above 217°C should be 60–150 seconds; recommended stencil aperture is 0.15 mm thick with 80% area ratio for optimal solder paste release.
IRFH7185TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FASTIRFET™, HEXFET®
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2320 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 160W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
IRFH7185TRPBF FAQ
1.How can I place an order for IRFH7185TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7185TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7185TRPBF reliable?
The price and inventory of IRFH7185TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7185TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH7185TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7185TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7185TRPBF?
IRFH7185TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7185TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7185TRPBF?
For technical support, including IRFH7185TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7185TRPBF requirements.
6.How does Aetrix verify that IRFH7185TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH7185TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7185TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH7185TRPBF?
All IRFH7185TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7185TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7185TRPBF part is unused and in its original packaging.
Return procedure for IRFH7185TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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