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Infineon Technologies IRFH7188TRPBF
- Part No.:
- IRFH7188TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IRFH7188TRPBF.pdf
- Description:
- MOSFET N-CH 100V 18A/105A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,125
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Product details
Overview
IRFH7188TRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 105 A N-channel enhancement-mode Power MOSFET in PQFN 5×6 mm package, featuring 6.0 mΩ max RDS(on) at VGS = 10 V, 33 nC typical Qg, and 0.92 Ω typical gate resistance - optimized for high-frequency telecom DC-DC primary switching and synchronous rectification.
For engineers reviewing the IRFH7188TRPBF datasheet, IRFH7188TRPBF pinout, IRFH7188TRPBF application, or IRFH7188TRPBF equivalent, key selection criteria include thermal resistance to PCB (<0.95 °C/W), low-profile height (<1.05 mm), industry-standard pinout compatibility, and avalanche energy rating (493 mJ).
Technical Context
This HEXFET® Power MOSFET employs trench-gate silicon technology with optimized charge distribution for fast switching and low conduction loss. Its RDS(on) of 5.0 mΩ (typical) at 10 V gate drive enables high-efficiency operation in 48–60 V telecom power stages.
The device integrates a robust body diode with 50 ns typical reverse recovery time (trr) and 75 nC typical Qrr, supporting synchronous rectification and active O-ring functions without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports 48 V/60 V bus systems with 20 %+ voltage margin against transients |
| RDS(on) max @ VGS = 10 V | 6.0 mΩ - limits conduction loss to ≤3.15 W at 105 A continuous drain current |
| Qg typical | 33 nC - enables efficient gate driving with standard 1–2 A peak gate drivers at ≥500 kHz |
| RθJC (Bottom) | 0.95 °C/W - allows >130 W power dissipation with 100 °C temperature rise to PCB |
| ID @ TC(Bottom) = 25°C | 105 A - rated for high-current primary-side switch in compact 5×6 mm footprint |
| trr typical | 50 ns - ensures clean turn-off in synchronous rectifier mode with minimal voltage overshoot |
| EAS (Single Pulse) | 493 mJ - provides unclamped inductive switching robustness in hot-swap and O-ring applications |
Pinout & Package
PQFN 5×6 mm package with exposed bottom thermal pad; 8-pin layout (3×2 source, 1 gate, 1 drain, 3 additional source terminals) - designed for low-inductance, high-current PCB mounting with direct thermal coupling to copper plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main power output terminal | Connected to internal die backside; electrically and thermally tied to exposed top metal pad |
| Gate (G) | Control input | Single-input gate terminal; requires <1.0 Ω series resistance for optimal EMI and ringing control |
| Source (S1–S6) | Return path for channel current | Six parallel source terminals minimize bond-wire inductance and improve current sharing uniformity |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) (6.0 mΩ max) | Reduces I²R conduction losses by ≥35 % vs. comparable 100 V MOSFETs in 5×6 mm PQFN |
| 0.95 °C/W RθJC (Bottom) | Enables >100 W continuous power handling on 2 oz. copper with single-layer thermal pad |
| Industry-standard pinout | Ensures drop-in replacement capability across multiple vendors' 5×6 mm PQFN power MOSFETs |
| MSL1 rating | Eliminates pre-bake requirement during SMT reflow, reducing manufacturing cycle time and cost |
| Rg tested (0.92 Ω typical) | Guarantees consistent switching timing and reduces risk of gate oscillation in high-dV/dt environments |
Applications
| Telecom DC-DC Primary Switch | Synchronous Rectifier |
|---|---|
Use Scenario: High-frequency isolated forward or LLC converter in 48 V telecom rack power supply. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–700 kHz with hard-switched or resonant gate drive. Use Value: 6.0 mΩ RDS(on) and 33 nC Qg jointly enable >96 % efficiency at full load while maintaining thermal headroom on 4-layer PCB. |
Use Scenario: Secondary-side synchronous rectification in 12 V or 5 V output stage of telecom DC-DC module. IC Role / Device Role / Timing Role: Low-side N-channel switch replacing Schottky diode, driven by transformer-coupled or controller-based gate signal. Use Value: Body diode trr = 50 ns and Qrr = 75 nC prevent voltage spikes and reduce EMI during reverse recovery, improving system reliability. |
| Hot-Swap Controller | Active O-Ring |
Use Scenario: Inrush current limiting and fault isolation in redundant 48 V power feeds for server backplanes. IC Role / Device Role / Timing Role: Low-side current-controlled switch with fast overcurrent response via external sense resistor and comparator. Use Value: 493 mJ single-pulse avalanche energy withstands repeated hot-plug events without degradation under 100 V bus conditions. |
Use Scenario: OR-ing function in dual-redundant 48 V power inputs for network switches or storage controllers. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET pair acting as ideal diode with ultra-low forward voltage drop. Use Value: 0.8 V typical VSD at 50 A and 105 A continuous source rating support high-current OR-ing with <1.5 W conduction loss per device. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay SiR626DP | RDS(on) = 5.8 mΩ (max), Qg = 35 nC, same PQFN 5×6 mm package | Higher gate charge increases driver loss; identical thermal performance and pinout | Preferred when tighter RDS(on) tolerance required, but gate drive capability must be verified |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 6.2 mΩ (max), Qg = 30 nC, slightly lower Ciss (1950 pF) | Lower Qg improves high-frequency efficiency; reduced avalanche rating (380 mJ) | Optimal for high-frequency (>1 MHz) designs where avalanche stress is minimal |
Compared with SiR626DP and NTMFS4C09NT1G, IRFH7188TRPBF offers the highest avalanche energy (493 mJ) and lowest RθJC (0.95 °C/W), making it uniquely suited for telecom hot-swap and unclamped inductive switching where thermal and ruggedness margins are critical.
Availability
IRFH7188TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC power supplies, hot-swap modules, and active OR-ing circuits requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for IRFH7188TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with legacy expertise from International Rectifier's HEXFET® portfolio.
This device belongs to the FastIRFET™ family - engineered specifically for high-efficiency, high-frequency power conversion in telecom infrastructure, where low RDS(on), fast switching, and ruggedness under transient stress are mandatory.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFH7188TRPBF supports 66 A continuous drain current at TC(Bottom) = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PQFN 5×6 mm package and must be validated with actual PCB thermal design using the 0.95 °C/W RθJC(Bottom) value.
Is IRFH7188TRPBF suitable for synchronous rectification in a 12 V output stage?
Yes - its 0.8 V typical body diode forward voltage at 50 A and 50 ns typical reverse recovery time enable efficient synchronous rectification in 12 V outputs. The low Qrr (75 nC) minimizes switching loss and voltage overshoot during commutation, especially when paired with adaptive gate drivers.
Does this MOSFET require a gate resistor for stability?
A gate resistor of 0.5–1.0 Ω is recommended to dampen parasitic oscillation caused by trace inductance and the device's 0.92 Ω intrinsic gate resistance. Layout-dependent ringing can occur above 300 kHz without proper gate loop minimization and series resistance.
How does the PQFN 5×6 mm package improve thermal performance over SO-8?
The PQFN 5×6 mm package delivers 0.95 °C/W junction-to-PCB thermal resistance - ~4× better than SO-8's typical 3.8 °C/W - due to direct copper exposure on the bottom thermal pad and elimination of leadframe thermal bottlenecks, enabling higher power density in space-constrained telecom modules.
IRFH7188TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FASTIRFET™, HEXFET®
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2116 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 132W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PQFN (5x6)
IRFH7188TRPBF FAQ
1.How can I place an order for IRFH7188TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7188TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7188TRPBF reliable?
The price and inventory of IRFH7188TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7188TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH7188TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7188TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7188TRPBF?
IRFH7188TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7188TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7188TRPBF?
For technical support, including IRFH7188TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7188TRPBF requirements.
6.How does Aetrix verify that IRFH7188TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH7188TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7188TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH7188TRPBF?
All IRFH7188TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7188TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7188TRPBF part is unused and in its original packaging.
Return procedure for IRFH7188TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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