Infineon Technologies IRFH7190TRPBF

Overview

IRFH7190TRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 82 A N-channel enhancement-mode Power MOSFET in PQFN 5×6 mm package, featuring 7.5 mΩ R_DS(on) at V_GS = 10 V, 26 nC typical Q_g, and 1.0 Ω gate resistance - optimized for high-frequency synchronous rectification and telecom DC-DC power stages.

For engineers reviewing the IRFH7190TRPBF datasheet, IRFH7190TRPBF pinout, IRFH7190TRPBF application, or IRFH7190TRPBF equivalent, this device delivers low conduction loss, fast switching with controlled dv/dt, and industry-standard pinout compatibility for secondary-side rectification, hot-swap O-rings, and BLDC motor drive half-bridges.

Technical Context

This MOSFET employs a trench-gated HEXFET® structure with integrated snubber functionality to suppress V_DS spikes during hard-switching transitions. Its low R_θJC(bottom) of 1.2 °C/W enables direct thermal coupling to PCB copper, supporting high-current operation up to 82 A at T_C = 25°C.

The device exhibits a gate threshold voltage (V_GS(th)) of 2.0–3.6 V, negative temperature coefficient for R_DS(on), and robust avalanche capability (269 mJ E_AS). Its 1685 pF C_iss and 16 pF C_rss support stable high-frequency operation in 48–60 V telecom converters.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed drain pad on bottom side for thermal and electrical connection; 8-pin configuration with 3-source, 1-gate, 1-drain (top-side), and 3-source (bottom-side via thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power switching applications.

Compared with SiR626DP and NTMFS4C09N, IRFH7190TRPBF offers the optimal balance of R_DS(on), Q_g, and integrated snubbing - making it preferred for 300–800 kHz telecom and industrial SR applications where both efficiency and EMI robustness are co-constrained.

Availability

IRFH7190TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC power supplies, hot-swap OR-ing circuits, and BLDC motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFH7190TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap technologies.

This device belongs to Infineon's FastIRFET™ family - engineered specifically for high-frequency, high-efficiency power conversion in telecom, server, and motor control systems where low Q_g/R_DS(on) ratio and robust thermal performance are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH7190TRPBF supports 52 A continuous drain current at T_C = 100°C, derated linearly from 82 A at 25°C using a 0.03 W/°C factor. This reflects its 1.2 °C/W R_θJC(bottom) and 104 W P_D rating at T_C = 25°C - verified per JEDEC JESD51-14 standards with bottom-side thermal interface.

Does this MOSFET require a gate resistor for safe operation?

Yes - although it features a 1.0 Ω internal gate resistance, an external series gate resistor (typically 2.2–10 Ω) is required to dampen ringing, control dv/dt, and limit peak gate current during fast switching. The recommended value depends on driver strength and target switching speed, with 4.7 Ω commonly used for 500 kHz telecom applications.

Is the PQFN 5×6 mm package lead-free and RoHS compliant?

Yes - IRFH7190TRPBF is RoHS-compliant and halogen-free per IEC 61249-2-21, with Pb-free terminations and MSL1 moisture sensitivity rating. The package uses NiPdAu plating on copper leads and meets IPC/JEDEC J-STD-020D reflow profiles without preconditioning.

Can this MOSFET be used in avalanche mode for unclamped inductive switching?

Yes - the device is fully characterized for single-pulse avalanche operation with 269 mJ E_AS at T_J = 25°C. It supports I_AR = 48 A avalanche current and is validated per JEDEC JESD24-1; however, repetitive avalanche is not guaranteed and requires careful thermal design and pulse-width limitation per Fig 12 and 14.