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Infineon Technologies IRFH7191TRPBF
- Part No.:
- IRFH7191TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IRFH7191TRPBF.pdf
- Description:
- MOSFET N-CH 100V 15A/80A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,391
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Product details
Overview
IRFH7191TRPBF from Infineon Technologies is a 100 V, 80 A (TC = 25°C) N-channel enhancement-mode Power MOSFET in PQFN 5×6 mm package, featuring RDS(on) ≤ 8.0 mΩ @ VGS = 10 V, Qg = 26 nC (typ), and Rg = 1.0 Ω (typ). It serves as primary switch or synchronous rectifier in high-frequency telecom DC-DC converters.
For engineers reviewing the IRFH7191TRPBF datasheet, IRFH7191TRPBF pinout, IRFH7191TRPBF application, or IRFH7191TRPBF equivalent, key selection criteria include low thermal resistance to PCB (<1.2°C/W), industry-standard pinout for multi-vendor compatibility, and validated avalanche energy rating (EAS = 269 mJ).
Technical Context
This HEXFET® Power MOSFET employs trench-gate silicon technology optimized for high-efficiency switching in 48–60 V telecom power systems. Its low RDS(on) and fast switching parameters (td(on) = 4.5 ns, tf = 3.6 ns) enable high-frequency operation with reduced conduction and switching losses.
The device integrates a robust body diode with VSD = 0.8–1.3 V @ IS = 48 A and trr = 63–95 ns, supporting synchronous rectification and active O-ring functions. Thermal design is enabled by dual-path junction-to-case resistance: RθJC(Bottom) = 1.2°C/W and RθJC(Top) = 22°C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V/60 V bus architectures with margin. |
| RDS(on) max @ VGS = 10 V | 8.0 mΩ - Enables <1.5 W conduction loss at 48 A, critical for high-current primary-side switching. |
| Qg typical | 26 nC - Low gate charge reduces driver power demand and supports >1 MHz switching in resonant topologies. |
| ID @ TC = 25°C | 80 A - Continuous current rating referenced to bottom-case temperature, enabling compact heatsinking on PCB copper. |
| RθJC(Bottom) | <1.2°C/W - Direct thermal path to PCB allows efficient power dissipation without external heatsink in space-constrained modules. |
| EAS | 269 mJ - Single-pulse avalanche energy rating validates robustness against inductive turn-off transients in unclamped circuits. |
| VGS(th) | 2.0–3.6 V - Gate threshold ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers. |
Pinout & Package
PQFN 5×6 mm (Outline "G") package with exposed drain pad (D) on bottom for thermal and electrical connection. Industry-standard 3-pin layout: Drain (D), Source (S), Gate (G) - pin 1 identified by marking dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal (connected to internal die substrate) | Exposed copper pad on bottom surface; must be soldered to large PCB copper pour for thermal and current handling. |
| Source (S) | Reference node for gate drive and current return path | Three top-side pins tied internally; provides low-inductance source connection for high di/dt switching. |
| Gate (G) | Control terminal for channel modulation | Single top-side pin; requires <1.0 Ω series gate resistor to damp ringing and control dV/dt per design guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 6.2 mΩ (typ) @ VGS = 10 V - Reduces I²R losses in high-current telecom power stages, improving efficiency above 95%. |
| Low-profile package | Height <1.05 mm - Enables ultra-thin power modules and improves airflow in stacked board assemblies. |
| 100% Rg tested | Gate resistance = 1.0 Ω (typ) - Ensures consistent switching behavior across production lots, simplifying gate driver design. |
| MSL1 rating | Moisture Sensitivity Level 1 - Eliminates bake requirements before reflow, reducing manufacturing cost and risk of voiding. |
| RoHS & halogen-free | Compliant with EU RoHS Directive 2011/65/EU and JEDEC JS709 - Meets environmental compliance for global telecom equipment deployment. |
Applications
| Telecom DC-DC Primary Switch | Synchronous Rectifier |
|---|---|
Use Scenario: High-frequency isolated forward or LLC converter in 48 V telecom rectifier shelf. IC Role / Device Role / Timing Role: Main high-side switching element operating at 300–1000 kHz with hard-switched or ZVS gate drive. Use Value: Low Qg and RDS(on) minimize total switching + conduction loss, enabling >96% peak efficiency at full load. |
Use Scenario: Secondary-side rectification in 12 V or 5 V output stage of telecom server PSU. IC Role / Device Role / Timing Role: Synchronously replaces Schottky diode with precise gate timing aligned to transformer secondary voltage polarity. Use Value: Body diode trr = 63 ns and low VSD reduce reverse recovery loss and cross-conduction risk during dead-time transitions. |
| Hot Swap Controller | Active O-Ring |
Use Scenario: Inrush current limiting and fault isolation in redundant 48 V backplane power distribution. IC Role / Device Role / Timing Role: Low-side current-controlled switch with fast overcurrent shutdown via external sense resistor and comparator. Use Value: 80 A continuous rating and 234 A pulsed capability support high-power hot-plug events without thermal derating. |
Use Scenario: OR-ing diode replacement in dual-input 48 V power supply redundancy schemes. IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET controlled by dedicated OR-ing controller IC (e.g., LTC4359). Use Value: RDS(on) < 8 mΩ cuts forward voltage drop vs. 0.4 V Schottky, reducing power loss by >70% at 40 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFN110N10P3 | RDS(on) = 9.5 mΩ @ 10 V; TO-264 package; higher RθJA (35°C/W) | Requires bolt-down heatsink; unsuitable for ultra-thin designs | Prefer when mechanical ruggedness and legacy footprint compatibility outweigh size constraints. |
| SiR626DP | RDS(on) = 7.2 mΩ @ 10 V; same PQFN 5×6; Qg = 32 nC (higher) | Higher gate charge increases driver loss at >500 kHz | Choose when lowest RDS(on) is prioritized and switching frequency remains ≤300 kHz. |
Compared with IXFN110N10P3 and SiR626DP, IRFH7191TRPBF delivers optimal balance of low-profile thermal performance (RθJC <1.2°C/W), moderate gate charge (26 nC), and industry-standard pinout-making it ideal for space- and efficiency-critical telecom power modules.
Availability
IRFH7191TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, hot-swap controllers, and active OR-ing circuits requiring stable component supply, tight parametric consistency, and long-term industrial availability.
Supply support for IRFH7191TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
IRFH7191TRPBF belongs to the FastIRFET™ family-designed specifically for high-frequency, high-efficiency power conversion in telecom and server infrastructure where low RDS(on), fast switching, and PCB-centric thermal management are essential.
FAQ
What is the maximum continuous drain current for IRFH7191TRPBF at 100°C case temperature?
The maximum continuous drain current is 51 A when the bottom-case temperature (TC) is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN 5×6 package and must be verified using actual PCB copper area and airflow conditions.
Does IRFH7191TRPBF require a gate driver with negative turn-off capability?
No. The device has a gate threshold voltage range of 2.0–3.6 V and is fully compatible with single-supply 0–10 V or 0–12 V gate drivers. Negative turn-off is not required, though a small negative bias (e.g., –2 V) may improve noise immunity in high-dV/dt environments.
Can IRFH7191TRPBF be used in avalanche mode during normal operation?
It is rated for single-pulse avalanche energy (EAS = 269 mJ) and is qualified for unclamped inductive switching, but avalanche operation is not intended for repetitive or continuous use. Designers should implement snubbers or clamp circuits to avoid sustained avalanche stress.
Is the PQFN 5×6 package lead-free and RoHS-compliant?
Yes. IRFH7191TRPBF is marked "PbF" (lead-free) and complies with RoHS Directive 2011/65/EU and JEDEC JS709 standards for halogen-free materials. The package uses matte tin plating and meets MSL1 reflow requirements without pre-bake.
IRFH7191TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FASTIRFET™, HEXFET®
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 48A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1685 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PQFN (5x6)
IRFH7191TRPBF FAQ
1.How can I place an order for IRFH7191TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7191TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7191TRPBF reliable?
The price and inventory of IRFH7191TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7191TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH7191TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7191TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7191TRPBF?
IRFH7191TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7191TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7191TRPBF?
For technical support, including IRFH7191TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7191TRPBF requirements.
6.How does Aetrix verify that IRFH7191TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH7191TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7191TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH7191TRPBF?
All IRFH7191TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7191TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7191TRPBF part is unused and in its original packaging.
Return procedure for IRFH7191TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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