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Infineon Technologies IRFH7194TRPBF
- Part No.:
- IRFH7194TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IRFH7194TRPBF.pdf
- Description:
- MOSFET N-CH 100V 11A/35A 8PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,374
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Product details
Overview
IRFH7194TRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 35 A N-channel enhancement-mode Power MOSFET in PQFN 5×6 mm package, featuring 13.7 mΩ typical RDS(on) at VGS = 10 V, 13 nC typical total gate charge, and 3.2 °C/W junction-to-case thermal resistance. It serves as a primary switch or synchronous rectifier in high-frequency telecom DC-DC converters.
For engineers reviewing the IRFH7194TRPBF datasheet, IRFH7194TRPBF pinout, IRFH7194TRPBF application, or IRFH7194TRPBF equivalent, key selection criteria include low conduction loss (≤16.4 mΩ max), fast switching capability (Qgd = 4.3 nC), MSL1 reliability rating, and compatibility with standard surface-mount manufacturing processes.
Technical Context
This HEXFET® Power MOSFET employs trench-gate silicon technology optimized for high-frequency switching in isolated and non-isolated DC-DC topologies. Its low Qg/Qgd ratio (13 nC / 4.3 nC) enables efficient gate drive with minimal Miller-induced turn-off delay.
The device integrates a robust body diode with 30–45 ns reverse recovery time and 26–39 nC Qrr, supporting synchronous rectification without external Schottky replacement in 48V/60V telecom supplies. Thermal performance is defined by dual-path junction-to-case resistance: 3.2 °C/W (bottom) and 22 °C/W (top).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48V bus systems with 2× transient margin. |
| RDS(on) max @ VGS = 10 V | 16.4 mΩ - Limits conduction loss to ≤3.6 W at 21 A continuous, enabling compact thermal design. |
| Qg typical | 13 nC - Enables fast switching with low gate driver power consumption in 300–1000 kHz DC-DC stages. |
| RθJC (Bottom) | 3.2 °C/W - Allows direct PCB copper thermal spreading, supporting >35 W dissipation with proper layout. |
| ID @ TC = 25°C | 35 A - Sustains full-load current in primary-side hard-switched or secondary-side synchronous rectifier positions. |
| VGS(th) | 2.0–3.6 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. |
| Qgd | 4.3 nC - Minimizes Miller plateau duration, reducing overlap loss during hard-switching transitions. |
Pinout & Package
PQFN 5×6 mm Outline "B" package with exposed thermal pad on bottom side; 3.2 °C/W RθJC achieved via soldered thermal pad connection to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path (source of electrons) | Internally connected to exposed thermal pad; must be soldered to large PCB copper area for thermal and electrical return. |
| Source (S) | Reference node for gate control and current return | Three parallel source terminals reduce parasitic inductance; critical for minimizing switching ringing in high-dI/dt applications. |
| Gate (G) | Control electrode for channel formation | Single terminal with 2.1 Ω internal gate resistance; compatible with standard gate drivers without external series resistor for most 500 kHz designs. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 13.7 mΩ typical at 10 V gate drive reduces I²R losses by >25% vs. legacy 20 mΩ MOSFETs in 48V telecom PSUs. |
| 100% Rg tested | Guarantees consistent gate resistance (2.1 Ω typ.) across production lots, eliminating variability in switching speed and EMI behavior. |
| MSL1 rating | Enables single-reflow assembly without baking, reducing manufacturing cost and risk of moisture-induced popcorn failure. |
| Industry-standard pinout | Matches common PQFN 5×6 footprints used by competing 100 V MOSFETs, allowing drop-in substitution in existing layouts. |
| Low profile (≤1.05 mm) | Supports ultra-thin power modules and stacked PCB architectures where Z-height is constrained to <1.2 mm. |
Applications
| Telecom DC-DC Primary Switch | Synchronous Rectifier |
|---|---|
|
Use Scenario: High-efficiency 48 V input, 12 V output isolated forward converter operating at 500 kHz. IC Role / Device Role / Timing Role: Primary-side high-side switch handling full input voltage and peak current stress. Use Value: 16.4 mΩ RDS(on) and 13 nC Qg enable >95% efficiency at 20 A load while maintaining <80 °C junction temperature. |
Use Scenario: Secondary-side synchronous rectification in 60 V input, 5 V output LLC resonant converter. IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: Body diode trr = 30–45 ns and Qrr = 26–39 nC minimize reverse recovery loss, improving light-load efficiency by 2–3%. |
| Industrial Motor Drive Half-Bridge | Server VRM High-Side Switch |
|
Use Scenario: 24–48 V BLDC motor gate driver stage with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutating motor phase current. Use Value: 35 A continuous current rating and 140 A pulsed capability support 3× overload torque without derating. |
Use Scenario: 12 V input, 1.2 V output multiphase buck converter for CPU core power delivery. IC Role / Device Role / Timing Role: High-side switching element in interleaved phase leg, switching at 1 MHz. Use Value: Low Qgd/Qg ratio ensures clean turn-off edge and reduced shoot-through risk under high dV/dt conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRFH7195TRPBF | Same package and pinout; VDSS = 80 V, RDS(on) = 12.5 mΩ max at 10 V | Better conduction loss at ≤80 V bus, but lower voltage margin for 48 V transients | Select when system maximum bus voltage is ≤60 V and lowest RDS(on) is prioritized over 100 V rating. |
| Vishay SiR626DP | PQFN 5×6 mm; VDSS = 100 V, RDS(on) = 15.5 mΩ max, Qg = 14.5 nC | Higher gate charge increases driver loss; slightly higher RDS(on) raises conduction loss by ~6% | Acceptable for cost-sensitive designs where 1.5 nC Qg increase and 0.9 mΩ RDS(on) penalty are tolerable. |
Compared with IRFH7194TRPBF, the IRFH7195TRPBF trades voltage headroom for lower conduction loss, while the SiR626DP offers second-source availability at modest efficiency penalties in gate drive and conduction domains.
Availability
IRFH7194TRPBF is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor drives, server VRMs, and synchronous rectifier circuits requiring stable component supply and MSL1 reflow compatibility.
Supply support for IRFH7194TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with strong heritage in silicon power devices.
This part belongs to Infineon's FastIRFET™ family-designed specifically for high-frequency, high-efficiency DC-DC conversion in telecom, server, and industrial power systems where low Qg and RDS(on) are critical.
FAQ
What is the maximum continuous drain current for IRFH7194TRPBF at 100°C case temperature?
The maximum continuous drain current is 22 A when the bottom case temperature (TC) is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to increased RDS(on) and reduced safe operating area at elevated temperatures.
Does IRFH7194TRPBF require a gate resistor for typical 500 kHz operation?
No external gate resistor is required for most 500 kHz applications because the device integrates a 2.1 Ω gate resistance, which provides optimal damping for switching waveforms. External resistors may be added only if overshoot or ringing persists due to specific PCB layout parasitics.
Can IRFH7194TRPBF be used in avalanche mode, and what is its rated single-pulse energy?
Yes-it is rated for single-pulse unclamped inductive switching with 220 mJ avalanche energy at TJ = 25°C, using L = 3.0 mH and IAS = 12 A. Operation beyond this limit risks permanent parametric shift or failure; design margins should include temperature derating.
How does the PQFN 5×6 mm package improve thermal performance compared to SO-8?
The PQFN 5×6 mm package achieves 3.2 °C/W junction-to-case (bottom) thermal resistance-nearly 4× better than typical SO-8 MOSFETs (~12–15 °C/W)-by using a large copper-exposed thermal pad directly soldered to PCB copper, enabling efficient heat transfer away from the die.
IRFH7194TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FASTIRFET™, HEXFET®
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 16.4mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 733 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 39W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
IRFH7194TRPBF FAQ
1.How can I place an order for IRFH7194TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7194TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7194TRPBF reliable?
The price and inventory of IRFH7194TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7194TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH7194TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7194TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7194TRPBF?
IRFH7194TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7194TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7194TRPBF?
For technical support, including IRFH7194TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7194TRPBF requirements.
6.How does Aetrix verify that IRFH7194TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH7194TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7194TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH7194TRPBF?
All IRFH7194TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7194TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7194TRPBF part is unused and in its original packaging.
Return procedure for IRFH7194TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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