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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7446TR2PBF

Name: IRFH7446TR2PBF
Brand: Infineon Technologies
SKU: IRFH7446TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7446TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH7446TR2PBF.pdf

Description:: MOSFET N CH 40V 85A PQFN 5X6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH7446TR2PBF from Infineon Technologies is a 40 V, 85 A (package-limited), N-channel PQFN 5×6 mm power MOSFET optimized for high-efficiency synchronous rectification and half-bridge switching in DC/DC converters and BLDC motor drives. It delivers 2.5 mΩ typical R_DS(on) at V_GS = 10 V, supports 1123 A/µs di/dt in body diode recovery, and features enhanced avalanche ruggedness with 152 mJ single-pulse E_AS.

For engineers reviewing the IRFH7446TR2PBF datasheet, IRFH7446TR2PBF pinout, IRFH7446TR2PBF application, or IRFH7446TR2PBF equivalent, key selection criteria include its 2.5 mΩ on-resistance at 10 V gate drive, 85 A continuous package current rating, 1.6 °C/W junction-to-case thermal resistance, and validated dV/dt/di/dt robustness for hard-switched topologies.

Technical Context

This device is a silicon-limited, trench-based N-channel HEXFET MOSFET with integrated body diode engineered for fast, low-loss switching in high-frequency PWM applications. Its gate charge profile (Q_g = 65 nC typ., Q_gd = 23 nC) enables efficient gate driver sizing, while C_oss,eff(TR) = 656 pF and C_oss,eff(ER) = 637 pF support accurate snubber and loss modeling in resonant and hard-switched converters.

The MOSFET operates with V_GS(th) = 2.2–3.9 V and exhibits positive temperature coefficient for R_DS(on), enabling inherent current sharing in paralleled configurations. Its 150 °C maximum junction temperature, 1.6 °C/W R_θJC(bottom), and 3.8 mΩ max R_DS(on) at 125 °C ensure stable performance under sustained thermal stress in compact power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V and 24 V input systems with margin against transients
R_DS(on) typ.	2.5 mΩ @ V_GS = 10 V, T_J = 25 °C - Enables <1 W conduction loss at 20 A in high-current synchronous rectifiers
I_D (Package)	85 A @ T_C = 25 °C - Current limit defined by source bond reliability, not silicon capability
Q_g	65 nC typ. - Determines gate driver power requirement and switching speed in 100–500 kHz converters
R_θJC (Bottom)	1.6 °C/W - Enables direct thermal coupling to PCB copper pads for high-power density layouts
E_AS	152 mJ (single pulse) - Supports unclamped inductive switching in motor drive fault conditions without failure
V_SD	0.9–1.3 V @ I_S = 50 A - Low forward drop improves efficiency in bidirectional OR-ing and reverse conduction paths

Pinout & Package

PQFN 5 mm × 6 mm package with exposed thermal pad (bottom-side cooling), 8-pin configuration (3× source, 1× drain, 1× gate, 3× source tie). Designed for automated reflow assembly and high-current PCB interconnects.

Pin/Terminal	Circuit Role	Design Meaning
Source (S1–S3)	Main current return path and reference node	Three parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt operation
Drain (D)	Main power output terminal	Internally connected to die backside; requires low-inductance connection to high-side bus or heat sink
Gate (G)	Control input for channel modulation	Low-impedance gate structure (R_G = 1.5 Ω) minimizes ringing and simplifies gate driver design
Thermal Pad (Bottom)	Primary thermal interface	Exposed copper pad must be soldered to ≥1 in² 2 oz Cu pad for rated 85 A operation per datasheet thermal test condition

Key Features

Feature	Design Value
Enhanced body diode dV/dt and dI/dt capability	Rated for 2.6 V/ns dv/dt and 1123 A/µs di/dt - prevents false turn-on and latch-up during fast commutation
Full SOA characterization including avalanche	Validated safe operating area up to 100 µs pulses and 152 mJ single-pulse energy - enables robust overcurrent protection
RoHS-compliant, halogen-free construction	No lead, bromide, or halogen - meets IPC-J-STD-609 Class 1 and automotive ELV directive requirements
Optimized gate charge profile	Q_gd/Q_g = 35% - balances Miller effect suppression and switching speed for ZVS/ZCS compatibility

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: H-bridge control of 12–24 V brushed DC motors in power tools and automotive accessories.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current up to 85 A peak with fast body diode recovery.

Use Value: 0.9 V V_SD reduces conduction loss during freewheeling; 1123 A/µs di/dt rating prevents shoot-through during direction reversal.

Use Scenario: High-efficiency 3-phase inverter stage in e-bike and drone propulsion systems.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side leg, commutating 50 A RMS phase current at 20–50 kHz PWM.

Use Value: 2.5 mΩ R_DS(on) cuts conduction loss by >40% vs. legacy 4.5 mΩ devices; PQFN thermal pad sustains 100 °C case temp.

Synchronous Rectification

OR-ing Power Switch

Use Scenario: Secondary-side switching in isolated 48 V–12 V DC/DC converters for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Active replacement of Schottky diodes in forward/flyback topologies, driven by controller timing signals.

Use Value: 2.5 mΩ on-resistance and 656 pF C_oss,eff(TR) enable >98% efficiency at 20 A load; low Q_rr = 5.0 nC minimizes switching loss.

Use Scenario: Redundant 12 V power supply combining in industrial PLCs and network switches.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode with ultra-low forward voltage.

Use Value: 0.9 V V_SD and 85 A continuous rating allow hot-swap operation with <10 mV forward drop; avalanche rating handles load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7440TR2PBF	R_DS(on) = 3.0 mΩ typ., 40 V, same PQFN 5×6 package	Lower current density; higher conduction loss at >40 A	Select when thermal margin is constrained and lower gate charge (55 nC) prioritized over minimal R_DS(on)
SI7850DP-T1-GE3	R_DS(on) = 2.7 mΩ typ., 40 V, PowerPAK SO-8 package	Higher R_θJA (35 °C/W vs. 23 °C/W for IRFH7446), no bottom thermal pad	Select for legacy SO-8 footprint compatibility where board-level thermal management is less aggressive

Compared with IRFH7440TR2PBF and SI7850DP-T1-GE3, IRFH7446TR2PBF offers the lowest R_DS(on) and best thermal performance in PQFN 5×6, making it optimal for space-constrained, high-current synchronous rectification where junction temperature must stay below 125 °C under full load.

Availability

IRFH7446TR2PBF is available at Aetrix Electronics and suitable for BLDC motor drives, synchronous rectifiers, and OR-ing power switches requiring stable component supply across industrial and embedded power designs.

Supply support for IRFH7446TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability switching in battery-powered and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IRFH7446TR2PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100 °C is 74 A, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited conduction under thermal constraint, distinct from the 85 A package-limited rating at 25 °C. Derating follows the linear factor of 0.63 W/°C beyond 25 °C case temperature.

Does IRFH7446TR2PBF support gate drive voltages below 10 V?

Yes - the device is fully characterized down to V_GS = 4.5 V, with R_DS(on) increasing to 3.8 mΩ max at 125 °C and V_GS = 10 V. At V_GS = 6 V, typical R_DS(on) is ~4.2 mΩ, enabling use with 5 V logic-level controllers in medium-current applications.

How is the thermal pad on the PQFN package intended to be connected on the PCB?

The exposed thermal pad must be soldered to a minimum 1 in² (6.45 cm²) copper area of 2 oz thickness on FR-4, per the datasheet's thermal test condition. Vias (≥6× 0.3 mm diameter) should connect the pad to internal ground or thermal planes to achieve the rated 1.6 °C/W R_θJC(bottom) performance.

What is the significance of C_oss,eff(TR) = 656 pF versus standard C_oss = 479 pF?

C_oss,eff(TR) is a time-related effective capacitance calibrated to match the actual V_DS rise time from 0 to 80% V_DSS; it replaces C_oss in turn-off loss calculations. At 656 pF, it yields more accurate E_off prediction than raw C_oss, especially in hard-switched converters operating above 100 kHz.

IRFH7446TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 3174 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH7446TR2PBF FAQ

1.How can I place an order for IRFH7446TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7446TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7446TR2PBF reliable?

The price and inventory of IRFH7446TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7446TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH7446TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7446TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7446TR2PBF?

IRFH7446TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7446TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7446TR2PBF?

For technical support, including IRFH7446TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7446TR2PBF requirements.

6.How does Aetrix verify that IRFH7446TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH7446TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7446TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH7446TR2PBF?

All IRFH7446TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7446TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7446TR2PBF part is unused and in its original packaging.

Return procedure for IRFH7446TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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