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Infineon Technologies IRFH7446TRPBF
- Part No.:
- IRFH7446TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TQFN Exposed Pad
- Datasheet:
-
IRFH7446TRPBF.pdf
- Description:
- MOSFET N-CH 40V 85A 8PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:10,221
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Product details
Overview
IRFH7446TRPBF from Infineon Technologies is a 40 V, 85 A (package-limited), N-channel PQFN 5×6 mm power MOSFET optimized for high-efficiency synchronous rectification and half-bridge switching in DC/DC converters and BLDC motor drives. It delivers 2.5 mΩ typical RDS(on) at VGS = 10 V, supports 117 A silicon-limited current, and features enhanced body diode dV/dt and dI/dt ruggedness for robust PWM inverter operation.
For engineers reviewing the IRFH7446TRPBF datasheet, IRFH7446TRPBF pinout, IRFH7446TRPBF application, or IRFH7446TRPBF equivalent, key selection criteria include its 2.5 mΩ on-resistance at 10 V gate drive, 152 mJ single-pulse avalanche energy, 65 nC total gate charge, PQFN 5×6 mm thermal performance (RθJC = 1.6 °C/W), and validated operation up to 150 °C junction temperature.
Technical Context
This device is a trench-based N-channel HEXFET power MOSFET with integrated body diode, designed for high-frequency switching in hard-switched and resonant topologies. Its low Qgd/Qg ratio (23/65 nC) enables fast, controllable turn-off with reduced Miller-induced shoot-through risk in bridge configurations.
The MOSFET exhibits thermally stable threshold voltage (2.2–3.9 V), tightly controlled RDS(on) temperature coefficient (0.032 V/°C), and characterized Coss eff. (ER) of 637 pF - enabling accurate loss modeling in soft-switching designs such as LLC resonant converters and OR-ing circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage compatible with 36 V nominal battery systems and 48 V industrial bus rails. |
| RDS(on) typ. | 2.5 mΩ @ VGS = 10 V, TJ = 25°C - Enables <1.3 W conduction loss at 70 A continuous, critical for high-current synchronous rectifiers. |
| ID (Package) | 85 A @ TC = 25°C - Current limit defined by source bond wire capacity, not silicon, requiring careful PCB copper design. |
| Qg | 65 nC max. - Determines gate driver power requirement; enables efficient 500 kHz+ switching with moderate gate resistance. |
| EAS | 152 mJ (single pulse) - Supports unclamped inductive switching in motor drive fault conditions without failure. |
| VSD | 0.9–1.3 V @ IS = 50 A - Low forward drop of integrated body diode reduces reverse recovery losses in freewheeling paths. |
| RθJC (Bottom) | 1.6 °C/W - Enables high-power dissipation via bottom-side thermal pad; requires direct connection to 2 oz copper thermal plane. |
Pinout & Package
PQFN 5 mm × 6 mm package with exposed thermal pad (bottom-side cooling). Pin 1 (Source) and Pin 2 (Source) are paralleled for low-inductance source return; Pin 3 (Gate) and Pin 4 (Drain) are internally connected to respective die terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 & Pin 2 (S) | Source terminal (dual parallel) | Reduces source inductance and improves current sharing; must be routed with low-impedance copper to ground plane. |
| Pin 3 (G) | Gate terminal | Control input; requires <1.5 Ω series gate resistor to damp oscillation during fast switching. |
| Pin 4 (D) | Drain terminal | Main power output node; connects to high-side switch node or bus rail; requires short, wide trace to minimize ringing. |
| Thermal Pad (Bottom) | Junction-to-case thermal path | Primary heat extraction surface; must be soldered to ≥1 in² 2 oz FR-4 copper for rated 85 A operation. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | 2.6 V/ns - Prevents false turn-on during high dv/dt commutation, critical in half-bridge high-side freewheeling. |
| Low Coss eff. (Energy-related) | 637 pF - Reduces turn-off energy loss in resonant converters and improves ZVS margin. |
| High dI/dt capability | 1123 A/µs - Sustains rapid current rise during motor phase commutation without diode failure. |
| Avalanche-rated construction | 152 mJ EAS - Allows safe operation under inductive load interruption without external snubbers. |
| RoHS-compliant, halogen-free | No lead, bromide, or halogen - Meets IPC-1752A material declaration requirements for automotive and industrial end equipment. |
Applications
| Brushed Motor Drive | BLDC Motor Drive |
|---|---|
|
Use Scenario: H-bridge control of 24–36 V DC motors in power tools and robotics. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 85 A peak. Use Value: 2.5 mΩ RDS(on) minimizes I²R heating during stall conditions; 152 mJ avalanche rating absorbs back-EMF spikes. |
Use Scenario: Six-step commutation in 48 V e-bike and scooter motor controllers. IC Role / Device Role / Timing Role: High-side and low-side switch in three-phase inverter leg, operating at 20–50 kHz. Use Value: 65 nC Qg enables fast, low-loss switching; enhanced dV/dt ruggedness prevents shoot-through during cross-conduction. |
| Synchronous Rectifier | OR-ing Power Switch |
|
Use Scenario: Secondary-side rectification in isolated 12 V/50 A telecom DC/DC modules. IC Role / Device Role / Timing Role: Active replacement of Schottky diode in forward or LLC converter output stage. Use Value: 0.9 V VSD and low Qrr (5.0 nC) cut conduction and recovery losses by >40% vs. 40 V Schottky. |
Use Scenario: Redundant 12 V power supply combining in server backplanes and industrial PLCs. IC Role / Device Role / Timing Role: Unidirectional ideal diode controlling current flow from primary to backup rail. Use Value: 2.5 mΩ on-resistance ensures <30 mV forward drop at 12 A, minimizing voltage mismatch and thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7440TRPBF | RDS(on) = 3.0 mΩ (typ.), same 40 V rating, identical PQFN 5×6 mm package | Higher conduction loss; suitable where gate drive margin is limited or cost sensitivity outweighs efficiency gain | Select when thermal budget allows 0.5 mΩ higher RDS(on) and lower gate charge (55 nC) is prioritized over peak efficiency. |
| SiR626DP-T1-GE3 | 40 V, 2.3 mΩ (typ.), SO-8 package, RθJA = 50 °C/W (vs. 35 °C/W for IRFH7446TRPBF) | Limited to ≤35 A continuous due to higher thermal resistance; no bottom-side thermal pad | Choose only for space-constrained layouts where PQFN assembly is unavailable and power level stays below 25 W dissipation. |
Compared with IRFH7446TRPBF, IRFH7440TRPBF trades 0.5 mΩ higher on-resistance for slightly lower gate charge, while SiR626DP-T1-GE3 offers marginally better RDS(on) but lacks the thermal performance and avalanche robustness needed for 85 A motor drive or synchronous rectifier duty.
Availability
IRFH7446TRPBF is available at Aetrix Electronics and suitable for brushed motor drive, BLDC motor control, and synchronous rectifier applications requiring stable component supply across industrial OEM production ramps and embedded power module development cycles.
Supply support for IRFH7446TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
This part belongs to Infineon's HEXFET® PQFN power MOSFET product line, engineered specifically for high-current, high-frequency switching in compact power conversion and motor drive systems where thermal density and ruggedness are critical.
FAQ
What is the maximum continuous drain current for IRFH7446TRPBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 74 A (silicon-limited), per Absolute Maximum Ratings table. This reflects thermal derating from the 85 A rating at 25°C case temperature, constrained by junction-to-case thermal resistance and allowable TJmax = 150°C.
Can IRFH7446TRPBF be used in a high-side switch configuration with 10 V gate drive?
Yes - its VGS(th) range (2.2–3.9 V) and guaranteed RDS(on) at VGS = 10 V confirm reliable enhancement-mode operation in high-side configurations. However, a gate driver capable of level-shifting and delivering ≥1 A peak current is required to charge its 65 nC gate within nanoseconds.
How does the body diode's reverse recovery charge (Qrr) impact performance in synchronous rectification?
With Qrr = 5.0 nC (TJ = 25°C), the body diode introduces minimal stored charge during freewheeling transitions. This reduces voltage overshoot and switching loss when the MOSFET turns on after diode conduction, directly improving efficiency in 200–500 kHz DC/DC converters.
Is the PQFN 5×6 mm package of IRFH7446TRPBF compatible with standard reflow profiles?
Yes - it is qualified for JEDEC J-STD-020D moisture sensitivity level 2a and supports standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C). The exposed thermal pad requires full-solder coverage using stencil-applied solder paste and ≥6 reflow thermal mass under the pad for void-free attachment.
IRFH7446TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®, StrongIRFET™
- Package/Case:
- 8-TQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 98 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3174 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
IRFH7446TRPBF FAQ
1.How can I place an order for IRFH7446TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7446TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7446TRPBF reliable?
The price and inventory of IRFH7446TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7446TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH7446TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7446TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7446TRPBF?
IRFH7446TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7446TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7446TRPBF?
For technical support, including IRFH7446TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7446TRPBF requirements.
6.How does Aetrix verify that IRFH7446TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH7446TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7446TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH7446TRPBF?
All IRFH7446TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7446TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7446TRPBF part is unused and in its original packaging.
Return procedure for IRFH7446TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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