Infineon Technologies IRFH7882TRPBF
- Part No.:
- IRFH7882TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-VQFN
- Datasheet:
-
IRFH7882TRPBF.pdf
- Description:
- MOSFET N-CH 80V 26A 8PQFN
- Quantity:
- Payment:

- Shipping:

Inventory:6,751
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Product details
Overview
IRFH7882TRPBF from Infineon Technologies (formerly International Rectifier) is an 80 V, 180 A N-channel PQFN 5×6 mm FastIRFET™ Power MOSFET optimized for high-efficiency secondary-side synchronous rectification and primary-side switching in telecom DC-DC supplies. It delivers RDS(on) = 2.5 mΩ (typ) at VGS = 10 V, Qg = 49 nC (typ), and RθJC(Bottom) = 0.64 °C/W - enabling high-current, low-loss operation in compact 48–60 V power stages.
For engineers reviewing the IRFH7882TRPBF datasheet, IRFH7882TRPBF pinout, IRFH7882TRPBF application, or IRFH7882TRPBF equivalent, key selection criteria include its low-profile PQFN package, industry-standard pinout for multi-vendor board compatibility, validated gate resistance (Rg = 0.9 Ω), and thermal performance under high-duty-cycle conduction in telecom and motor drive systems.
Technical Context
This device employs a trench-gated, superjunction-enhanced HEXFET® structure with optimized charge distribution to achieve simultaneous low RDS(on) and low Qg. Its gate threshold voltage (VGS(th) = 2.0–3.6 V) supports robust 10 V gate drive while maintaining immunity to spurious turn-on in high-dv/dt environments.
The PQFN 5×6 mm package features dual-sided thermal interface: bottom-side copper-exposed die pad (RθJC(Bottom) = 0.64 °C/W) for PCB heat spreading and top-side thermal path (RθJC(Top) = 15 °C/W) for optional heatsink coupling - supporting >114 A continuous current at TC = 100°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Withstands up to 64 V DC bus in telecom 48 V systems with 25% safety margin |
| RDS(on) max @ VGS = 10 V | 3.1 mΩ - Enables <1.6 W conduction loss at 180 A, critical for high-current SR designs |
| Qg typical | 49 nC - Low gate charge reduces driver power and enables fast 6.6 ns td(on) / 5.6 ns tf |
| ID @ TC = 25°C | 180 A - Rated for high-current primary/secondary switching without derating on 2-layer PCBs |
| RθJC(Bottom) | 0.64 °C/W - Allows direct thermal coupling to PCB ground plane for efficient heat removal |
| VGS(th) | 2.0–3.6 V - Ensures clean turn-on with standard 5 V or 10 V logic-level drivers |
| Qrr typical | 116 nC - Low reverse recovery charge minimizes body diode losses during hard commutation |
Pinout & Package
PQFN 5×6 mm package with exposed thermal pad (bottom-side), 1.05 mm profile, MSL1 rating, and industry-standard 3-pin layout (Drain, Source, Gate) compatible with IPC-7351B footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal connected to internal die substrate | Electrically tied to exposed bottom thermal pad; must be soldered to large PCB copper area for thermal management |
| Source (S) | Reference node for gate drive and current return path | Connected to source metallization; forms low-inductance loop with gate driver ground for stable switching |
| Gate (G) | Control terminal modulating channel conductivity | High-impedance input requiring <100 nA leakage; gate resistance Rg = 0.9 Ω tested per unit for consistent timing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) (<3.1 mΩ) | Reduces I²R conduction loss by >30% vs. comparable 80 V MOSFETs, directly improving system efficiency at full load |
| Low RθJC(Bottom) (0.64 °C/W) | Enables 114 A continuous current at 100°C case temperature without external heatsink |
| 100% Rg tested | Guarantees gate drive timing consistency across production lots, critical for parallel operation |
| Industry-standard pinout | Supports drop-in replacement of other PQFN 5×6 mm MOSFETs (e.g., SiR626DP, CSD18540Q5B) without PCB redesign |
Applications
| Telecom DC-DC Primary Switch | Synchronous Rectifier (Secondary Side) |
|---|---|
Use Scenario: High-frequency isolated DC-DC converter in 48 V telecom base station power supply. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–500 kHz with 180 A peak current capability. Use Value: Low Qg (49 nC) and fast switching (tf = 5.6 ns) minimize turn-off losses, enabling >95% efficiency at 1 kW output. | Use Scenario: Secondary-side synchronous rectification in LLC resonant converter for server VRM. IC Role / Device Role / Timing Role: Low-VDS rectifying switch replacing Schottky diodes in 12 V output stage. Use Value: RDS(on) = 2.5 mΩ cuts conduction loss by 60% vs. 40 V Schottky, reducing thermal stress on output inductors. |
| Hot Swap / Active O-Ring | BLDC Motor Drive Phase Leg |
Use Scenario: OR-ing controller in redundant 48 V power distribution unit with inrush limiting. IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET used as active ideal diode with fast reverse recovery (trr = 64 ns). Use Value: Low Qrr (116 nC) prevents shoot-through during polarity reversal, ensuring reliable hot-plug operation. | Use Scenario: High-current phase leg switch in 24–48 V brushless DC motor drive for industrial automation. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter handling 150 A peak phase current. Use Value: 180 A rated current and 704 mJ single-pulse avalanche energy support robust operation during motor stall or short-circuit events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 80 V power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Toshiba TK80E08N1L | RDS(on) = 3.3 mΩ (max), Qg = 52 nC, PQFN 5×6 mm | Higher gate charge increases driver loss; identical thermal resistance | Acceptable where marginal efficiency loss is tolerable and second-source qualification is required |
| TI CSD18540Q5B | RDS(on) = 2.9 mΩ (max), Qg = 47 nC, same package | Lower Qg improves switching efficiency but slightly higher RDS(on) raises conduction loss | Preferred for ultra-high-frequency (>1 MHz) designs where switching loss dominates |
Compared with TK80E08N1L and CSD18540Q5B, IRFH7882TRPBF offers the lowest RDS(on) (2.5 mΩ typ), delivering superior conduction efficiency in high-current, moderate-frequency telecom and motor applications - making it optimal when thermal headroom is constrained.
Availability
IRFH7882TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC power supplies, BLDC motor drives, hot-swap controllers, and active OR-ing circuits requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFH7882TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to Infineon's FastIRFET™ family - engineered specifically for high-efficiency, high-current power conversion in telecom infrastructure, server PSUs, and motor control, emphasizing low RDS(on), fast switching, and robust thermal packaging.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFH7882TRPBF supports 114 A continuous drain current at TC = 100°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with ≥100 cm² of 2-oz copper connected to the exposed drain pad.
Does this MOSFET require a gate resistor for stability?
Yes - although Rg is internally characterized at 0.9 Ω (tested per unit), a discrete 2–5 Ω series gate resistor is recommended to dampen ringing and control dV/dt during hard switching, especially in paralleled configurations or high-inductance layouts.
Is the IRFH7882TRPBF suitable for avalanche-rated operation?
Yes - it is rated for 704 mJ single-pulse avalanche energy (EAS) with IAR = 38 A, validated per JEDEC JESD24-1. This supports unclamped inductive switching in motor drive fault conditions, provided pulse width and starting junction temperature comply with Fig 14 limits.
What is the moisture sensitivity level and reflow profile compliance?
The device is MSL1 (per JEDEC J-STD-020D), meaning it has unlimited floor life and may be reflowed using standard lead-free profiles without baking. Peak reflow temperature must not exceed 260°C, and thermal shock testing confirms reliability under IPC/JEDEC G-102 guidelines.
IRFH7882TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FASTIRFET™
- Package/Case:
- 8-VQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 26A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 74 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3186 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4W (Ta), 195W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
IRFH7882TRPBF FAQ
1.How can I place an order for IRFH7882TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7882TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7882TRPBF reliable?
The price and inventory of IRFH7882TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7882TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH7882TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7882TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7882TRPBF?
IRFH7882TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7882TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7882TRPBF?
For technical support, including IRFH7882TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7882TRPBF requirements.
6.How does Aetrix verify that IRFH7882TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH7882TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7882TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH7882TRPBF?
All IRFH7882TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7882TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7882TRPBF part is unused and in its original packaging.
Return procedure for IRFH7882TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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