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Infineon Technologies IRFH7885TRPBF
- Part No.:
- IRFH7885TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-VQFN
- Datasheet:
-
IRFH7885TRPBF.pdf
- Description:
- MOSFET N-CH 80V 22A 8PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,243
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Product details
Overview
IRFH7885TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in PQFN 5×6 mm package, rated for 80 V VDSS, 3.9 mΩ RDS(on) at 10 V VGS, and 146 A continuous drain current at TC = 25°C. It serves as a primary switch in high-frequency telecom DC-DC converters and synchronous rectifier in secondary-side power stages.
For engineers reviewing the IRFH7885TRPBF datasheet, IRFH7885TRPBF pinout, IRFH7885TRPBF application, or IRFH7885TRPBF equivalent, key selection criteria include its low gate charge (36 nC typ), 1.2 Ω gate resistance, 0.8 °C/W junction-to-case thermal resistance, and MSL1 moisture sensitivity rating for robust surface-mount manufacturing.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for high-frequency switching in hard-switched and synchronous rectification topologies. Its low RDS(on) and fast switching parameters-including 5.4 ns turn-on delay, 6.2 ns rise time, and 14.6 nC switch charge-enable high-efficiency operation above 300 kHz in 48–60 V telecom power supplies.
The device integrates a robust body diode with 50 A avalanche current rating and 202 mJ single-pulse avalanche energy, supporting unclamped inductive switching. Thermal design is facilitated by bottom-side thermal pad and industry-standard PQFN pinout compatible with multi-vendor PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - supports 48 V/60 V bus systems with 20 %+ voltage margin against transients |
| RDS(on) max @ 10 V | 3.9 mΩ - enables <1.5 W conduction loss at 60 A, critical for high-current power stages |
| Qg typical | 36 nC - reduces gate drive power and allows use of lower-power drivers in high-frequency designs |
| RθJC (Bottom) | 0.8 °C/W - permits direct thermal coupling to PCB copper, enabling compact heatsinkless layouts |
| ID @ TC = 25°C | 146 A - delivers high current density in 5×6 mm footprint, suitable for space-constrained modules |
| VGS(th) | 2.0–3.6 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| Qsw | 14.6 nC - minimizes switching losses during hard-switching transitions in telecom SMPS |
Pinout & Package
PQFN 5×6 mm package with exposed thermal pad on bottom side; 8-pin layout featuring 3-source, 3-drain, 1-gate, and 1-source sense configuration per manufacturer marking diagram and AN-1136 footprint guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7 | Source (S) | Parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications |
| 4, 8 | Drain (D) | Drain connections tied to internal die backside; used for high-current return path and thermal conduction |
| G | Gate (G) | Single gate terminal with 1.2 Ω internal gate resistance-reduces ringing without external gate resistor |
| Thermal Pad | Case / Heat Sink | Exposed copper pad under package bottom-must be soldered to large PCB copper area for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) (<3.9 mΩ) | Reduces I²R conduction losses in high-current telecom power rails, improving full-load efficiency by ≥0.8 % |
| Low RθJC (0.8 °C/W) | Enables >100 W power dissipation with minimal PCB copper area, eliminating need for external heatsinks |
| 100 % Rg tested | Guarantees consistent gate drive timing across production lots, reducing system-level timing variation |
| MSL1 rating | Allows unlimited floor life before reflow, simplifying SMT line scheduling and inventory management |
| Industry-standard PQFN pinout | Permits drop-in replacement with competing 5×6 mm MOSFETs without PCB redesign |
Applications
| Telecom DC-DC Primary Switch | Synchronous Rectifier |
|---|---|
Use Scenario: High-frequency isolated forward or LLC converter in 48 V telecom rack power supply delivering up to 1.2 kW. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–500 kHz with zero-voltage switching assist. Use Value: Low Qg and RDS(on) reduce total switching + conduction losses to <2.1 W at 60 A, enabling >95.2 % peak efficiency. | Use Scenario: Secondary-side synchronous rectification in 12 V output stage of 48 V–12 V intermediate bus converter. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated SR controller with adaptive dead-time management. Use Value: Body diode VSD = 0.8 V and fast trr = 45 ns minimize reverse recovery loss, improving light-load efficiency by 3.4 % vs. Schottky. |
| BLDC Motor Inverter | Industrial 24–60 V DC Power Distribution |
Use Scenario: 3-phase inverter driving 1–3 kW brushless DC motor in HVAC fan or industrial pump. IC Role / Device Role / Timing Role: Half-bridge low-side switch with 150 A pulsed capability and avalanche-rated ruggedness. Use Value: 202 mJ EAS withstands motor phase commutation spikes; 146 A continuous rating supports 120 % overload for 60 s. | Use Scenario: Solid-state relay or load switch in programmable power supply output stage or battery protection circuit. IC Role / Device Role / Timing Role: High-current, low-RDS(on) pass element controlling 24–60 V distribution to downstream subsystems. Use Value: 3.9 mΩ RDS(on) limits voltage drop to <0.24 V at 60 A, minimizing thermal derating and enabling compact board layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRFH7105TRPBF | Same PQFN 5×6 package; higher RDS(on) (5.3 mΩ), lower Qg (25 nC), 60 V rating | Better suited for 24–48 V systems where lower gate drive loss outweighs conduction loss penalty | Select when prioritizing gate drive efficiency over full-load conduction loss in mid-voltage applications |
| Vishay SiR872DP | Same 80 V rating and PQFN 5×6; RDS(on) = 4.2 mΩ, Qg = 39 nC, RθJC = 0.95 °C/W | Higher thermal resistance requires larger PCB copper area; identical pinout enables mechanical compatibility | Choose when requiring second-source availability with matched voltage/current specs but accepting 0.15 °C/W higher thermal impedance |
Compared with IRFH7105TRPBF and SiR872DP, IRFH7885TRPBF offers the lowest RDS(on) and best thermal performance in the 80 V PQFN class-making it optimal for high-current, high-efficiency telecom and motor drive applications where conduction loss dominates system thermal budget.
Availability
IRFH7885TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC power supplies, BLDC motor inverters, and industrial 24–60 V power distribution systems requiring stable component supply and long-term lifecycle support.
Supply support for IRFH7885TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with over 30 years of MOSFET innovation.
This device belongs to Infineon's FastIRFET™ family-engineered specifically for high-frequency, high-efficiency switching in telecom, server, and motor control applications where low Qg/RDS(on) ratio and rugged avalanche capability are critical.
FAQ
What is the maximum continuous drain current for IRFH7885TRPBF at 100°C case temperature?
The maximum continuous drain current is 93 A at TC = 100°C and VGS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures, requiring careful PCB thermal design to sustain this current.
Does IRFH7885TRPBF require an external gate resistor for stable switching?
No external gate resistor is required for basic stability, as the device integrates a 1.2 Ω gate resistance and exhibits low parasitic inductance due to its multi-source/drain PQFN layout. However, fine-tuning of dv/dt or EMI may still warrant a small series resistor (≤5 Ω) depending on driver strength and layout parasitics.
Can IRFH7885TRPBF be used in avalanche mode for unclamped inductive switching?
Yes-it is fully characterized for unclamped inductive switching with 202 mJ single-pulse avalanche energy at TJ = 25°C and 50 A avalanche current. Operation must follow the SOA curve in Figure 8 and limit pulse width per Figure 12 to avoid exceeding junction temperature limits.
What is the recommended PCB footprint and stencil design for IRFH7885TRPBF?
The official footprint and stencil recommendations are defined in Infineon Application Note AN-1136. It specifies a 4.8 × 5.8 mm thermal pad with 0.35 mm stencil aperture and 0.2 mm solder mask expansion, plus 0.4 mm pitch for peripheral pins-ensuring reliable solder joint formation and thermal transfer to the PCB.
IRFH7885TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FASTIRFET™
- Package/Case:
- 8-VQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2311 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 156W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
IRFH7885TRPBF FAQ
1.How can I place an order for IRFH7885TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7885TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7885TRPBF reliable?
The price and inventory of IRFH7885TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7885TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH7885TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7885TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7885TRPBF?
IRFH7885TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7885TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7885TRPBF?
For technical support, including IRFH7885TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7885TRPBF requirements.
6.How does Aetrix verify that IRFH7885TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH7885TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7885TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH7885TRPBF?
All IRFH7885TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7885TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7885TRPBF part is unused and in its original packaging.
Return procedure for IRFH7885TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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