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Infineon Technologies IRFH7914TR2PBF
- Part No.:
- IRFH7914TR2PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IRFH7914TR2PBF.pdf
- Description:
- MOSFET N-CH 30V 15A PQFN56
- Quantity:
- Payment:
- Shipping:
Inventory:4,166
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Product details
Overview
IRFH7914TR2PBF from Infineon Technologies is a 30V N-channel PQFN 5×6 mm power MOSFET optimized for high-efficiency synchronous buck converters in notebook CPU/GPU VRMs and isolated DC-DC converters in networking equipment, featuring 8.7 mΩ RDS(on) @ 10 V, 8.3 nC total gate charge, and 110 A pulsed drain current.
For engineers reviewing the IRFH7914TR2PBF datasheet, IRFH7914TR2PBF pinout, IRFH7914TR2PBF application, or IRFH7914TR2PBF equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, robust avalanche rating (30 mJ), PQFN thermal performance (RθJA = 40 °C/W), and body diode recovery (Qrr = 9.5–14 nC) for hard-switched topologies.
Technical Context
This HEXFET device uses planar trench-gate silicon technology to achieve low conduction loss and fast switching with controlled Qgd/Qgs ratio (2.8 nC / 3.1 nC). Its gate threshold voltage (1.35–2.35 V) enables reliable 4.5 V logic-level drive while maintaining noise immunity.
The integrated source-connected body diode exhibits 1.0 V forward drop at 11 A and 14–21 ns reverse recovery time under di/dt = 200 A/µs, supporting efficient synchronous rectification and unclamped inductive switching with validated 30 mJ single-pulse avalanche energy.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports 12 V input rails with 2× safety margin for transient overvoltage in notebook VRMs |
| RDS(on) max | 8.7 mΩ @ VGS = 10 V - enables <1.5 W conduction loss at 14 A DC, critical for high-current CPU power stages |
| Qg | 8.3 nC - reduces gate driver power demand and switching loss in 300–1000 kHz sync-buck designs |
| ID (pulsed) | 110 A - sustains short-circuit events in server DC-DC modules without thermal runaway |
| RθJA | 40 °C/W - achieves ≤100 °C junction rise at 3.1 W dissipation on 1-in² 2-oz copper, enabling compact PCB layout |
| Qrr | 9.5–14 nC - minimizes commutation loss and EMI during body-diode turn-off in phase-shifted full-bridge converters |
Pinout & Package
PQFN 5×6 mm package with exposed thermal pad (pin 1 identifier marked), offering 7.2 °C/W junction-to-case thermal resistance and large source lead for solder joint reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Source (S) | Power return path for drain current | Multi-pin parallel connection lowers source inductance and improves current sharing in paralleled MOSFETs |
| Drain (D) | Main power output terminal | Exposed copper pad on bottom surface provides primary heat transfer path to PCB ground plane |
| Gate (G) | Control electrode | Low 1.3–2.2 Ω gate resistance enables stable 10–20 ns switching edges with minimal ringing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 11.2 mΩ - ensures full enhancement with 5 V microcontroller GPIO, eliminating level-shifter need |
| 100% RG tested | 1.3–2.2 Ω - guarantees consistent gate drive timing across production lots for predictable EMI behavior |
| Lead-free reflow qualified | 260 °C peak - compatible with standard Pb-free assembly processes without delamination risk |
| Low thermal resistance | RθJC = 7.2 °C/W - allows direct heatsink mounting via thermal vias for >50 W power stages |
Applications
| Notebook CPU Voltage Regulator | Telecom Isolated DC-DC Converter |
|---|---|
Use Scenario: Dual-phase 1.0–1.3 V/40 A VRM supplying Intel Core i7 processor under dynamic load transients. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz with 4.5 V gate drive from integrated PWM controller. Use Value: 8.7 mΩ RDS(on) limits conduction loss to <2.5 W per phase, enabling fanless thermal design. | Use Scenario: Primary-side active clamp flyback in 48 V telecom power supply delivering 12 V/10 A to baseband processing board. IC Role / Device Role / Timing Role: Main switching FET handling 300 kHz hard-switching with unclamped inductive turn-off stress. Use Value: Validated 30 mJ avalanche energy absorbs leakage inductance spikes without snubber circuitry. |
| GPU Power Delivery Module | Industrial PLC I/O Power Stage |
Use Scenario: 0.8 V/60 A multiphase VRM for NVIDIA RTX-class graphics processors with tight voltage regulation (<±15 mV). IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conducting during dead-time, requiring fast Qrr recovery. Use Value: 9.5–14 nC Qrr and 14–21 ns trr minimize shoot-through risk and reduce dead-time penalty by 30% vs. legacy MOSFETs. | Use Scenario: 24 V input DC-DC stage powering isolated analog sensor interfaces in factory automation controllers. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward converter, operating at 200 kHz with 100% duty cycle capability. Use Value: 110 A pulsed current rating supports 3× overload protection during motor startup surges without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7104TRPBF | Higher RDS(on) (12.5 mΩ @ 10 V), same PQFN 5×6 package and 30 V rating | Suitable for lower-current VRMs (<25 A) where cost sensitivity outweighs efficiency gain | Select when BOM cost reduction is prioritized over 0.5% system efficiency improvement |
| SI7157DP-T1-GE3 | Lower Qg (6.5 nC) but higher RDS(on) (13.5 mΩ @ 10 V); SO-8 package with higher RθJA (62 °C/W) | Better suited for space-constrained industrial SMPS where gate drive loss dominates conduction loss | Prefer for 100–200 kHz designs with limited PCB area but no thermal budget constraints |
Compared with IRFH7104TRPBF and SI7157DP-T1-GE3, IRFH7914TR2PBF delivers the lowest RDS(on)-to-Qg product (72 mΩ·nC) among 30 V PQFN devices, making it optimal for high-frequency, high-current synchronous buck stages where both conduction and switching losses must be minimized simultaneously.
Availability
IRFH7914TR2PBF is available at Aetrix Electronics and suitable for notebook VRMs, telecom DC-DC converters, and GPU power delivery modules requiring stable component supply and long-term lifecycle support.
Supply support for IRFH7914TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
This part belongs to Infineon's TrenchStop™ and OptiMOS™-derived HEXFET portfolio, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The IRFH7914TR2PBF supports 35 A continuous drain current at TA = 70°C with proper PCB copper area (1-in² 2-oz), based on its 40 °C/W RθJA and 150°C maximum junction temperature. Derating follows linear 0.025 W/°C beyond 70°C ambient.
Does this MOSFET require a gate resistor for stability in 500 kHz operation?
Yes - a 1.8 Ω gate resistor is recommended per the datasheet's switching time test circuit (Fig. 15a) to dampen ringing caused by Lg–Ciss resonance. The specified 1.3–2.2 Ω intrinsic RG ensures compatibility with standard gate drivers without external tuning.
Can IRFH7914TR2PBF be used in avalanche mode for clamping?
Yes - it is 100% tested for unclamped inductive switching and rated for 30 mJ single-pulse avalanche energy at TJ = 25°C (Fig. 13). Operation requires strict current limiting and thermal monitoring; repetitive avalanche is not guaranteed.
Is the PQFN 5×6 mm package compatible with automated optical inspection (AOI)?
Yes - the laser-marked top-side identification (including date code and lot traceability) and coplanar lead geometry meet IPC-A-610 Class 3 requirements for AOI detection. Exposed thermal pad voiding must be controlled to <25% per J-STD-006 for reliable thermal performance.
IRFH7914TR2PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 8.7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1160 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
IRFH7914TR2PBF FAQ
1.How can I place an order for IRFH7914TR2PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7914TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7914TR2PBF reliable?
The price and inventory of IRFH7914TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7914TR2PBF is usually 5 days.
3.What payment methods are accepted for IRFH7914TR2PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7914TR2PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7914TR2PBF?
IRFH7914TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7914TR2PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7914TR2PBF?
For technical support, including IRFH7914TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7914TR2PBF requirements.
6.How does Aetrix verify that IRFH7914TR2PBF is sourced from the original manufacturer or authorized distributors?
All IRFH7914TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7914TR2PBF meets industry standards.
7.What is the process for return or replacement of IRFH7914TR2PBF?
All IRFH7914TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7914TR2PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7914TR2PBF part is unused and in its original packaging.
Return procedure for IRFH7914TR2PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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