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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7921TR2PBF

Name: IRFH7921TR2PBF
Brand: Infineon Technologies
SKU: IRFH7921TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7921TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH7921TR2PBF.pdf

Description:: MOSFET N-CH 30V 15A/34A PQFN

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Product details

Overview

IRFH7921TR2PBF from Infineon Technologies is a 30V, 12A N-channel PQFN 5×6 mm power MOSFET optimized as a control FET in high-frequency synchronous buck converters for networking and computing point-of-load (POL) applications, featuring 8.5 mΩ R_DS(on) at V_GS = 10 V, 9.3 nC total gate charge, and 7.9 °C/W junction-to-case thermal resistance.

For engineers reviewing the IRFH7921TR2PBF datasheet, IRFH7921TR2PBF pinout, IRFH7921TR2PBF application, or IRFH7921TR2PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, fully characterized avalanche capability, lead-free reflow qualification to 260 °C, and PQFN package thermal performance for high-density DC/DC designs.

Technical Context

This HEXFET device uses a trench-gate silicon process to achieve low conduction loss and fast switching with minimal gate drive energy. Its 9.3 nC total gate charge and 3.2 nC gate-to-drain charge enable efficient operation at >1 MHz switching frequencies in POL converters.

The MOSFET integrates a robust body diode with 12 ns typical reverse recovery time and 11–17 nC Q_rr, supporting synchronous rectification while maintaining low EMI in tightly regulated 12 V input systems. Thermal design is supported by 7.9 °C/W R_θJC and large source pad for reliable solder joint integrity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V input bus and transient margin in server VRMs.
R_DS(on) max	8.5 mΩ @ V_GS = 10 V - Enables <1.3 W conduction loss at 12 A, critical for high-efficiency POL stages.
Q_g	9.3 nC - Low gate charge reduces driver power and enables fast turn-on/turn-off with standard gate drivers.
I_D @ T_A = 25°C	12 A - Continuous current rating under standard PCB layout conditions without heatsink.
R_θJC	7.9 °C/W - Enables direct thermal path to heatsink or copper plane, supporting >20 W power dissipation in compact layouts.
Q_rr	11–17 nC - Quantified reverse recovery charge ensures predictable shoot-through behavior during synchronous FET commutation.
V_GS(th)	1.35–2.35 V - Gate threshold range supports robust 4.5 V logic-level drive while avoiding false turn-on from noise.

Pinout & Package

PQFN 5×6 mm package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Source, Drain, Gate) in standard top-side marking orientation.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Connected to exposed copper pad on bottom side - primary thermal path and high-current return node.
Source (S)	Reference node for gate drive and current sensing	Largest top-side metallization area - minimizes source inductance and improves stability in high-di/dt switching.
Gate (G)	Control input for channel modulation	Small-signal input requiring <2.4 Ω series resistance to damp ringing; sensitive to ESD per ±20 V rating.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V V_GS	Enables full enhancement with 5 V microcontroller GPIO or dedicated gate drivers without level-shifting.
Fully characterized avalanche voltage/current	Supports unclamped inductive switching stress up to 120 mJ (E_AS) - eliminates need for external snubbers in ruggedized POL designs.
100% tested R_G	Guarantees gate resistance between 1.4–2.4 Ω - ensures consistent switching speed and dV/dt control across production lots.
Lead-free reflow qualified to 260 °C	Validated for standard Pb-free SMT processes without delamination or voiding - critical for high-reliability server and telecom assemblies.
Low thermal resistance (R_θJC = 7.9 °C/W)	Allows direct mounting to thermal vias or heatsinks - achieves 150 °C max junction temperature at 12 A continuous load on 2 oz Cu board.

Applications

Server VRM Control FET

AI Accelerator POL Stage

Use Scenario: Primary high-side switch in 48 V-to-12 V intermediate bus converter feeding GPU/CPU core rails.

IC Role / Device Role / Timing Role: Control FET in synchronous buck topology operating at 500 kHz–1 MHz with 4.5 V gate drive.

Use Value: 8.5 mΩ R_DS(on) and 9.3 nC Q_g reduce conduction + switching losses by >18% vs. legacy SO-8 equivalents, enabling higher power density.

Use Scenario: Point-of-load regulator supplying 0.8–1.2 V at up to 120 A to AI inference accelerators.

IC Role / Device Role / Timing Role: High-frequency control FET paired with low-R_DS(on) sync FET in multiphase buck stage.

Use Value: PQFN 5×6 mm footprint and 7.9 °C/W R_θJC support parallel-phase thermal management without thermal derating.

Networking Switch ASIC Power

Enterprise SSD Power Management

Use Scenario: Core voltage regulator for 100 GbE switch ASICs requiring fast transient response and low noise.

IC Role / Device Role / Timing Role: Control FET in 12 V input, 1.8 V output buck converter with 1 MHz switching frequency.

Use Value: 12 ns t_rr and controlled Q_rr minimize dead-time uncertainty and improve light-load efficiency over discrete diode solutions.

Use Scenario: Power delivery to NAND flash controller and DRAM buffer in NVMe enterprise SSDs.

IC Role / Device Role / Timing Role: Compact control FET in space-constrained 3.3 V/5 V POL module with strict thermal envelope.

Use Value: Large source lead and halogen-free RoHS compliance meet enterprise storage reliability and environmental requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar control FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 7.0 mΩ @ 10 V; Q_g = 10.5 nC; same PQFN 5×6 package	Slightly lower R_DS(on) but higher gate charge increases driver loss at >1 MHz	Prefer when conduction loss dominates; verify gate driver capability for 10.5 nC load.
IPB120N04S4-02	R_DS(on) = 1.2 mΩ @ 10 V; TO-263 package; higher current rating (120 A)	Larger footprint and higher thermal mass - unsuitable for dense POL layouts	Select only when board space allows TO-263 and system requires >30 A per phase.

Compared with SiR872DP-T1-GE3 and IPB120N04S4-02, IRFH7921TR2PBF delivers optimal balance of low gate charge, validated avalanche ruggedness, and compact PQFN thermal performance for 12 A-class high-frequency POL control FET roles - making it preferred where switching loss, layout density, and transient reliability are jointly constrained.

Availability

IRFH7921TR2PBF is available at Aetrix Electronics and suitable for server VRMs, AI accelerator POL stages, networking switch ASIC power, and enterprise SSD power management requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFH7921TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap power solutions.

This part belongs to Infineon's OptiMOS™ 50V/30V low-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in data center, telecom, and computing infrastructure.

FAQ

What is the maximum recommended gate drive voltage for IRFH7921TR2PBF?

The absolute maximum V_GS rating is ±20 V, but the device is fully enhanced and specified down to 4.5 V. For reliable long-term operation, gate drive should be limited to 10–12 V to avoid accelerated gate oxide stress while maintaining low R_DS(on) and minimizing Miller-induced shoot-through risk in synchronous configurations.

Does IRFH7921TR2PBF require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to control dV/dt and suppress oscillation. Based on measured R_G = 1.4–2.4 Ω and typical gate driver output impedance, a 2.2–4.7 Ω external resistor provides optimal trade-off between switching speed and EMI suppression in 500 kHz–1 MHz buck applications.

Can IRFH7921TR2PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (0.02 %/°C) enables natural current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and thermal coupling via shared copper pour or heatsink to maintain <5 °C junction temperature delta between devices at full load.

Is the body diode suitable for asynchronous rectification in flyback or boost topologies?

No - the body diode is optimized for synchronous rectification within buck converters, not unidirectional hard-switched applications. Its 12–18 ns t_rr and 11–17 nC Q_rr are insufficient for reliable boost/flyback operation above 100 kHz; external Schottky or SiC diodes are required for those topologies.

IRFH7921TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6) Single Die

IRFH7921TR2PBF FAQ

1.How can I place an order for IRFH7921TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7921TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7921TR2PBF reliable?

The price and inventory of IRFH7921TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7921TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH7921TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7921TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7921TR2PBF?

IRFH7921TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7921TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7921TR2PBF?

For technical support, including IRFH7921TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7921TR2PBF requirements.

6.How does Aetrix verify that IRFH7921TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH7921TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7921TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH7921TR2PBF?

All IRFH7921TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7921TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7921TR2PBF part is unused and in its original packaging.

Return procedure for IRFH7921TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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