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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7921TRPBF

Name: IRFH7921TRPBF
Brand: Infineon Technologies
SKU: IRFH7921TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7921TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH7921TRPBF.pdf

Description:: MOSFET N-CH 30V 15A/34A PQFN

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Product details

Overview

IRFH7921TRPBF from Infineon Technologies is a 30V N-channel PQFN 5×6 mm HEXFET® Power MOSFET optimized as a control FET in high-frequency synchronous buck converters for networking and computing systems, featuring 8.5 mΩ R_DS(on) at V_GS = 10 V, 9.3 nC total gate charge, and 100% RG-tested lead-free construction.

For engineers reviewing the IRFH7921TRPBF datasheet, IRFH7921TRPBF pinout, IRFH7921TRPBF application, or IRFH7921TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, fully characterized avalanche capability, low thermal resistance (R_θJC = 7.9 °C/W), and PQFN package suitability for high-density point-of-load designs.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve enhanced switching efficiency and reduced conduction loss in DC-DC control FET roles. Its gate threshold voltage (1.35–2.35 V) and low Q_gd/Q_g ratio (3.2/9.3 nC) support fast, low-loss turn-on/off transitions under 4.5 V logic-level drive.

The device integrates a robust intrinsic body diode with 12 ns typical reverse recovery time (t_rr) and 11–17 nC Q_rr, enabling reliable operation in hard-switched synchronous rectification. Thermal design is supported by low R_θJA (40–55 °C/W) and large source lead for solder joint reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in server VRMs.
R_DS(on) max	8.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 12 A continuous drain current in compact layouts.
Q_g	9.3 nC - Low gate charge reduces driver power demand and supports >1 MHz switching in POL converters.
t_r/t_f	7.6 ns / 4.7 ns - Fast edge rates minimize switching transition losses and EMI generation.
R_θJC	7.9 °C/W - Enables direct heatsinking via exposed drain pad for thermal management in high-power density modules.
E_AS	100 mJ - Fully tested unclamped inductive avalanche energy ensures robustness during load dump or short-circuit events.

Pinout & Package

PQFN 5×6 mm (3.3 mm × 3.3 mm die area, 0.55 mm height), thermally enhanced with exposed drain pad and large source terminals for low-inductance, high-current routing and improved solder joint reliability.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Exposed copper pad on bottom - must be soldered to PCB ground plane for thermal and electrical performance.
Source (S)	Reference node for gate drive and current return	Multiple large top-side pads - minimizes source inductance and improves stability in high-di/dt applications.
Gate (G)	Control electrode for channel modulation	Single top-side pad - requires low-impedance gate driver trace to suppress ringing and ensure clean turn-on.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	10.4 mΩ - Enables efficient operation directly from standard 5 V or 4.5 V gate drivers without level-shifting.
Fully characterized avalanche	100% tested E_AS up to 100 mJ - eliminates need for external snubbers in inductive load switching.
Lead-free & RoHS compliant	Qualified for 260 °C reflow - meets IPC-J-STD-020 moisture sensitivity Level 1 and halogen-free requirements.
Low C_iss/C_oss ratio	1210 pF / 240 pF - improves zero-voltage switching (ZVS) compatibility and reduces capacitive turn-on loss.

Applications

Server VRM Control FET

AI Accelerator Board POL Converter

Use Scenario: Primary high-side switch in 48 V-to-12 V intermediate bus converter feeding GPU voltage regulators.

IC Role / Device Role / Timing Role: Control FET in synchronous buck topology operating at 500 kHz–1 MHz with 12 A peak load current.

Use Value: 8.5 mΩ R_DS(on) and 9.3 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by ≥1.2% versus prior-generation MOSFETs.

Use Scenario: Input-stage control FET in dual-phase 12 V-to-0.8 V point-of-load regulator for AI inference ASICs.

IC Role / Device Role / Timing Role: High-frequency switching element with tight gate timing control to maintain phase alignment across parallel channels.

Use Value: Low Q_gd/Q_g (34%) and 7.6 ns rise time enable precise dead-time control and minimize shoot-through risk at 1.2 MHz.

Enterprise SSD Power Sequencing

5G Baseband Radio PA Bias Supply

Use Scenario: Hot-swap and sequencing FET controlling 3.3 V/5 V rail enablement in NVMe SSD controller power tree.

IC Role / Device Role / Timing Role: Load switch with controlled turn-on slew rate to limit inrush current during power-up.

Use Value: Gate threshold (1.8 V typ.) and low Q_g allow precise RC-based soft-start implementation without auxiliary circuitry.

Use Scenario: Bias supply switch regulating 28 V to 12 V for GaN PA stage in massive MIMO RF front-end.

IC Role / Device Role / Timing Role: High-reliability control FET subjected to repetitive unclamped inductive stress during PA burst transmission.

Use Value: 100% tested 100 mJ E_AS ensures no degradation after >10⁶ cycles of 28 V/5 A inductive switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel control FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 7.0 mΩ @ 10 V; Q_g = 11.5 nC; PQFN 5×6 mm	Higher gate charge increases driver loss at >1 MHz; lower R_DS(on) favors ultra-high-efficiency designs	Prefer when lowest conduction loss dominates over switching frequency constraints
IPB120N04S4-02	R_DS(on) = 1.2 mΩ @ 10 V; TO-263 package; higher capacitance (C_iss = 3900 pF)	Larger footprint and higher C_iss limit usable frequency to ≤300 kHz; better for high-current, low-frequency industrial SMPS	Select only if board space allows TO-263 and target frequency is below 400 kHz

Compared with SiR626DP-T1-GE3 and IPB120N04S4-02, IRFH7921TRPBF delivers optimal balance of low Q_g, moderate R_DS(on), and PQFN thermal performance-making it uniquely suited for high-frequency, space-constrained server and AI hardware POL converters.

Availability

IRFH7921TRPBF is available at Aetrix Electronics and suitable for server VRMs, AI accelerator board POL converters, enterprise SSD power sequencing, and 5G baseband radio bias supplies requiring stable component supply and long-term lifecycle continuity.

Supply support for IRFH7921TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap power solutions.

The IRFH7921TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter and telecom infrastructure where thermal density and switching speed are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRFH7921TRPBF supports 34 A continuous drain current at T_A = 70°C with proper PCB copper area and airflow. This rating assumes mounting on a 1-in² 2-oz copper pad with 1 oz internal layers and 200 LFM airflow, per datasheet Figure 9. Derating begins linearly above 70°C at 0.025 W/°C.

Is IRFH7921TRPBF suitable for 4.5 V gate drive in synchronous buck applications?

Yes - its R_DS(on) is specified at 10.4 mΩ @ V_GS = 4.5 V and 15 A, and gate threshold voltage (1.35–2.35 V) ensures full enhancement with standard 5 V logic drivers. The low Q_g (9.3 nC) further enables efficient 4.5 V operation without excessive gate driver dissipation.

Does this MOSFET require external gate resistors for stability?

A series gate resistor (1.5–3.3 Ω) is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with Q_gd and C_iss. The 1.4–2.4 Ω intrinsic gate resistance (R_G) provides baseline damping, but external tuning ensures robustness across board variants and load conditions.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 1.0 V (typ.) at 12 A and t_rr = 12–18 ns, making it suitable for synchronous rectification in buck converters up to 1 MHz. While Schottky diodes offer lower forward drop, this MOSFET's diode is fully characterized and co-optimized with channel parameters for predictable ZVS behavior and minimal Q_rr-induced loss.

IRFH7921TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6) Single Die

IRFH7921TRPBF FAQ

1.How can I place an order for IRFH7921TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7921TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7921TRPBF reliable?

The price and inventory of IRFH7921TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7921TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH7921TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7921TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7921TRPBF?

IRFH7921TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7921TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7921TRPBF?

For technical support, including IRFH7921TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7921TRPBF requirements.

6.How does Aetrix verify that IRFH7921TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH7921TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7921TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH7921TRPBF?

All IRFH7921TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7921TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7921TRPBF part is unused and in its original packaging.

Return procedure for IRFH7921TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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