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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7923TRPBF

Name: IRFH7923TRPBF
Brand: Infineon Technologies
SKU: IRFH7923TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7923TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH7923TRPBF.pdf

Description:: MOSFET N-CH 30V 15A PQFN56

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH7923TRPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 12A N-channel PQFN-packaged power MOSFET optimized as the control FET in high-frequency synchronous buck converters for networking and computing point-of-load applications. It delivers 6.8 mΩ R_DS(on) at V_GS = 10 V, 8.7 nC total gate charge, and 2.0 Ω gate resistance, enabling fast switching with low conduction loss.

For engineers reviewing the IRFH7923TRPBF datasheet, IRFH7923TRPBF pinout, IRFH7923TRPBF application, or IRFH7923TRPBF equivalent, key selection criteria include its 30V V_DS, 6.8 mΩ on-resistance at 10V drive, PQFN 5×6 mm package with exposed drain pad, avalanche-rated construction, and RoHS-compliant lead-free qualification up to 260°C reflow.

Technical Context

This device employs a trench-gated HEXFET structure with fully characterized unclamped inductive switching (UIS) capability and specified reverse recovery parameters (Q_rr = 11–17 nC, t_rr = 12–18 ns). Its gate threshold voltage (1.35–2.35 V) and low ∆V_GS(th)/°C (−5.8 mV/°C) support stable turn-on across temperature.

The PQFN package provides 8.3 °C/W junction-to-case thermal resistance and integrates a large source lead for solder joint reliability. Device capacitances-C_iss = 1095 pF, C_oss = 235 pF, C_rss = 110 pF-are characterized at 1 MHz and V_DS = 15 V, supporting accurate high-frequency loss modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in POL converters
R_DS(on) max @ V_GS = 10 V	8.7 mΩ - Confirmed worst-case conduction loss at full rated current and nominal gate drive
Q_g	8.7 nC - Total gate charge determining driver strength requirement for <10 ns switching transitions
I_D @ T_A = 25°C	12 A - Continuous DC current rating under standard bench conditions with adequate PCB copper
R_θJA	40–55 °C/W - Ambient-referred thermal resistance defining heatsinking needs for 12 A operation
E_AS	120 mJ - Single-pulse avalanche energy enabling robustness against inductive switching faults
V_SD	1.0 V - Body diode forward voltage at 12 A, critical for synchronous rectification dead-time design

Pinout & Package

PQFN-8 (5 × 6 mm, 0.95 mm height) with exposed drain pad (Pin 1 = Gate, Pin 2 = Source, Pin 3 = Source, Pin 4 = Source, Pin 5 = Drain, Pin 6 = Drain, Pin 7 = Drain, Pin 8 = Drain). Thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control terminal	Receives PWM signal; low 2.0 Ω gate resistance enables fast edge rates with minimal external driver loss
Sources (Pins 2, 3, 4)	Power return path	Parallel source terminals reduce package inductance and improve current sharing in high-di/dt buck phases
Drain (Pins 5–8 + thermal pad)	High-side switch node	Exposed drain pad provides primary thermal path and low-inductance connection to input rail plane

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	9.3 mΩ - Enables efficient operation with logic-level gate drivers in 5 V or 3.3 V control systems
Fully characterized avalanche	120 mJ E_AS - Validated energy handling supports reliable operation during hard-switching transients
Low Q_gd/Q_g ratio	2.7 nC / 8.7 nC = 0.31 - Reduces Miller-induced shoot-through risk in synchronous buck topologies
Halogen-free & RoHS	Qualified to 260°C reflow - Ensures compatibility with lead-free assembly processes without delamination

Applications

Server VRM Control FET

AI Accelerator POL Converter

Use Scenario: Primary high-side switch in 48 V → 0.8 V, 300 A multiphase VRM supplying CPU/GPU cores.

IC Role / Device Role / Timing Role: Control FET switching at 500 kHz–1 MHz with precise dead-time control to minimize body diode conduction loss.

Use Value: 6.8 mΩ R_DS(on) and 8.7 nC Q_g enable >92% efficiency at 12 A per phase while maintaining thermal margin below 100°C junction.

Use Scenario: High-density 12 V → 0.75 V buck stage powering FPGA or ASIC fabric in AI training servers.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch operating in continuous conduction mode with tight V_GS threshold stability.

Use Value: −5.8 mV/°C V_GS(th) coefficient ensures consistent turn-on timing across 0–85°C ambient, reducing output voltage drift.

Enterprise Switch PoL Regulator

Cloud Storage Controller Power

Use Scenario: Compact 12 V → 3.3 V/5 V regulator on line card PCBs with strict space constraints.

IC Role / Device Role / Timing Role: Low-profile control FET leveraging PQFN 5×6 mm footprint and exposed drain for direct thermal coupling to chassis.

Use Value: 8.3 °C/W R_θJC allows direct heatsink mounting, eliminating need for thermal vias and saving 25% board area vs. SO-8.

Use Scenario: Dual-rail power supply (1.8 V + 1.2 V) for NVMe SSD controllers requiring low-noise, fast-transient response.

IC Role / Device Role / Timing Role: Fast-switching control element with 12 ns t_r and 4.9 ns t_f to support dynamic load steps up to 5 A/µs.

Use Value: 1095 pF C_iss and 110 pF C_rss yield predictable gate drive behavior, minimizing EMI during load transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar control-FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5020TRPBF	Higher R_DS(on) (10.5 mΩ @ 10 V), same 30 V rating and PQFN-8 package	Lower current density; suited for lower-power 6–8 A POL stages	Select when thermal budget permits higher conduction loss in exchange for cost reduction
SiR872DP-T1-GE3	Lower Q_g (6.5 nC) but higher R_DS(on) (9.2 mΩ); different pinout (no dedicated gate pin)	Requires PCB redesign due to non-compatible layout; better for ultra-fast switching where gate drive loss dominates	Choose only if gate drive loss is the dominant inefficiency and layout revision is feasible

Compared with IRFH5020TRPBF and SiR872DP-T1-GE3, IRFH7923TRPBF offers the optimal balance of low R_DS(on), moderate Q_g, and validated avalanche ruggedness for 12 A synchronous buck control applications without requiring layout changes.

Availability

IRFH7923TRPBF is available at Aetrix Electronics and suitable for server VRMs, AI accelerator POL converters, enterprise switch PoL regulators, and cloud storage controller power supplies requiring stable component supply and long-term industrial availability.

Supply support for IRFH7923TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's TrenchFET® HEXFET® family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter and networking infrastructure where thermal density and switching loss are critical.

FAQ

What is the maximum recommended gate drive voltage for IRFH7923TRPBF?

The absolute maximum V_GS is ±20 V, but the device is fully characterized and optimized for 10 V drive. Operation at 4.5 V yields usable R_DS(on) (9.3 mΩ), while 12 V drive does not significantly reduce on-resistance beyond 10 V and increases gate oxide stress risk over lifetime.

Does IRFH7923TRPBF require a gate resistor in typical buck converter applications?

Yes-a 1.8 Ω gate resistor is used in the official test circuit (Fig. 15a) to control dV/dt and suppress ringing. This value balances switching speed (t_r = 8.7 ns) with EMI and shoot-through immunity; values below 1.0 Ω increase risk of oscillation without measurable efficiency gain.

How is the PQFN thermal pad connected internally?

The exposed drain pad is electrically and thermally connected to all drain terminals (Pins 5–8). It must be soldered to a large PCB copper pour tied to the input voltage plane to achieve the specified 8.3 °C/W R_θJC; floating or undersized pads degrade thermal performance by >40%.

Is IRFH7923TRPBF suitable for linear regulation applications?

No-it is not characterized for safe operating area (SOA) in linear mode beyond brief transient conditions. The SOA curve (Fig. 8) shows operation is limited to pulse widths ≤100 µs at 12 A; sustained linear use risks thermal runaway due to lack of SOA derating data above 1 ms.

IRFH7923TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1095 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6) Single Die

IRFH7923TRPBF FAQ

1.How can I place an order for IRFH7923TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7923TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7923TRPBF reliable?

The price and inventory of IRFH7923TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7923TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH7923TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7923TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7923TRPBF?

IRFH7923TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7923TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7923TRPBF?

For technical support, including IRFH7923TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7923TRPBF requirements.

6.How does Aetrix verify that IRFH7923TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH7923TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7923TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH7923TRPBF?

All IRFH7923TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7923TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7923TRPBF part is unused and in its original packaging.

Return procedure for IRFH7923TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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