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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7932TRPBF

Name: IRFH7932TRPBF
Brand: Infineon Technologies
SKU: IRFH7932TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7932TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH7932TRPBF.pdf

Description:: MOSFET N-CH 30V 24A/104A PQFN

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Product details

Overview

IRFH7932TRPBF from Infineon Technologies (formerly International Rectifier) is a 30V N-channel PQFN-packaged HEXFET Power MOSFET optimized as a synchronous rectifier in isolated DC-DC converters and high-efficiency notebook CPU VRM power stages. It delivers 3.3 mΩ R_DS(on) at V_GS = 10 V, 34 nC total gate charge, and 104 A continuous drain current at T_A = 25°C - enabling low conduction loss and fast switching in high-frequency, high-current point-of-load applications.

For engineers reviewing the IRFH7932TRPBF datasheet, IRFH7932TRPBF pinout, IRFH7932TRPBF application, or IRFH7932TRPBF equivalent, key selection criteria include its 2.2°C/W junction-to-case thermal resistance, fully characterized avalanche capability (E_AS = 70 mJ), 100% RG-tested lead-free construction, and body diode reverse recovery charge (Q_rr = 33–50 nC) critical for synchronous rectification efficiency.

Technical Context

This device uses a trench-gated silicon process to achieve ultra-low R_DS(on) while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th) = 1.35–2.35 V) and negative temperature coefficient (−5.9 mV/°C) support stable parallel operation and predictable turn-on behavior across −55°C to +150°C junction range.

The PQFN 5×6 mm package integrates a large source pad and exposed thermal die paddle, directly supporting low R_θJA = 37°C/W and R_θJC = 2.2°C/W. Its C_iss = 4270 pF, C_oss = 830 pF, and C_rss = 420 pF values are specified at V_DS = 0 V and f = 1 MHz, enabling accurate hard-switching loss modeling in 300–1000 kHz converter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input bus and 12 V output rails in telecom and computing power supplies.
R_DS(on) max	3.3 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 25 A DC, critical for high-current CPU core rail efficiency.
Q_g	34 nC - Low gate drive energy reduces driver IC power consumption and enables use with standard 1–2 A gate drivers.
I_D cont @ T_A = 25°C	104 A - Supports high peak load currents in transient-heavy VRM applications without derating.
R_θJC	2.2 °C/W - Allows direct thermal coupling to heatsink or PCB copper, enabling >80 W dissipation with ≤175°C junction temp.
Q_rr	33–50 nC - Quantified reverse recovery charge of integrated body diode, essential for calculating synchronous rectifier switching loss.
E_AS	70 mJ - Single-pulse avalanche energy rating validated per JEDEC JESD24-1, supporting robustness against inductive transients.

Pinout & Package

PQFN 5 mm × 6 mm package with exposed thermal pad (pin 1 identifier marked), 8-pin layout (3-source, 3-drain, 1-gate, 1-source tab). Designed for high-current, low-inductance PCB mounting with solderable bottom thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
Drain (pins 1, 2, 3, 4, 5, 6)	High-side or low-side switch node	Multiple parallel drain terminals reduce package inductance and current density, improving EMI and UIS margin.
Source (pins 7, 8, tab)	Return path for load current and gate reference	Three dedicated source pins plus large thermal pad ensure low-resistance return path and minimize V_GS noise coupling.
Gate (pin 8)	Control terminal for channel modulation	Single gate connection with 0.7 Ω internal gate resistance supports controlled dV/dt and reduces ringing in high-speed switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	3.9 mΩ - Enables efficient operation with 5 V gate drive in legacy controller designs.
Fully characterized avalanche	Tested per JEDEC JESD24-1 - eliminates need for external snubbers in flyback or LLC resonant converters.
Low thermal resistance	R_θJC = 2.2°C/W - permits direct thermal interface to heatsink, reducing system-level cooling cost.
Lead-free & RoHS-compliant	Qualified for 260°C reflow - ensures compatibility with modern SMT assembly lines and environmental compliance.
Body diode Q_rr specification	33–50 nC - Enables precise synchronous rectifier timing control and loss prediction in high-frequency DC-DC topologies.

Applications

Server VRM Power Stage

Notebook CPU Core Supply

Use Scenario: High-current, multi-phase buck converter supplying Intel/AMD processors in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500–800 kHz with tight dead-time control.

Use Value: 3.3 mΩ R_DS(on) and 34 nC Q_g reduce conduction and switching losses, enabling >95% efficiency at 100 A output.

Use Scenario: Dual-phase 12 V input to 1 V output VRM powering mobile CPUs in ultrabooks.

IC Role / Device Role / Timing Role: High-side and low-side switch in compact, thermally constrained space.

Use Value: PQFN 5×6 mm footprint and 2.2°C/W R_θJC allow full 104 A rating without external heatsink.

Isolated Telecom DC-DC

Industrial PoL Converter

Use Scenario: Secondary-side synchronous rectifier in 48 V to 12 V isolated forward or LLC converter for networking equipment.

IC Role / Device Role / Timing Role: Fast-recovery body diode used during dead time; actively switched during main conduction period.

Use Value: Q_rr = 33–50 nC and t_rr = 21–32 ns enable clean zero-voltage switching transitions, minimizing cross-conduction loss.

Use Scenario: 24 V input to 3.3 V/5 V point-of-load regulator in programmable logic controllers and industrial HMIs.

IC Role / Device Role / Timing Role: Primary-side high-efficiency switch in non-isolated buck topology with wide ambient temperature range.

Use Value: −55°C to +150°C operating range and 70 mJ E_AS ensure reliability under industrial thermal cycling and overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5004TRPBF	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 27 nC; same PQFN 5×6 mm package	Higher R_DS(on) increases conduction loss by ~36% at 25 A; lower Q_g eases gate drive but sacrifices on-resistance	Select when gate drive capability is limited and moderate efficiency is acceptable.
SiR626DP-T1-GE3	R_DS(on) = 2.8 mΩ @ 10 V; Q_g = 41 nC; 5×6 mm PowerPAK SO-8 package (not PQFN)	Lower R_DS(on) improves conduction loss, but higher Q_g demands stronger gate driver; different footprint requires PCB redesign	Select when maximum efficiency is prioritized and board layout allows package change.

Compared with IRFH5004TRPBF and SiR626DP-T1-GE3, IRFH7932TRPBF offers the best balance of low R_DS(on), moderate Q_g, and PQFN thermal performance - making it optimal for space-constrained, high-current synchronous rectifier applications where both efficiency and thermal management are critical.

Availability

IRFH7932TRPBF is available at Aetrix Electronics and suitable for server VRMs, notebook CPU power delivery, isolated telecom DC-DC converters, and industrial point-of-load regulators requiring stable component supply and long-term production continuity.

Supply support for IRFH7932TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's TrenchStop™ and OptiMOS™-derived HEXFET portfolio, engineered specifically for high-frequency, high-current DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFH7932TRPBF has a rated junction temperature range of −55°C to +150°C. Continuous operation at T_J = 150°C is permitted provided the absolute maximum ratings (e.g., I_D, P_D) are not exceeded and thermal design maintains safe margin per Fig. 9 and Fig. 11. Derating begins above T_A = 70°C per linear derating factor of 0.03 W/°C.

Does this MOSFET require a gate resistor for stability?

Yes - although the device has an internal gate resistance of 0.7 Ω, an external series gate resistor (typically 1–10 Ω) is recommended to dampen ringing, control dV/dt, and prevent shoot-through in half-bridge configurations. Values depend on driver strength and layout parasitics; 4.7 Ω is commonly used with 1–2 A peak drivers.

Can IRFH7932TRPBF be used in avalanche mode intentionally?

No - while the device is 100% tested for single-pulse avalanche energy (E_AS = 70 mJ), it is not rated for repetitive avalanche operation. Intentional repeated avalanche stress exceeds design limits and risks parametric shift or failure. Use clamping circuits or proper snubbing for inductive switching protection.

Is the body diode suitable for freewheeling in non-synchronous designs?

Yes - the intrinsic body diode is characterized with V_SD = 1.0 V max at I_S = 20 A and t_rr = 21–32 ns. However, its Q_rr is relatively high versus Schottky alternatives; for non-synchronous operation above 100 kHz, efficiency loss from reverse recovery must be evaluated against discrete diode solutions.

IRFH7932TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 104A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4270 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6) Single Die

IRFH7932TRPBF FAQ

1.How can I place an order for IRFH7932TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7932TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7932TRPBF reliable?

The price and inventory of IRFH7932TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7932TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH7932TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7932TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7932TRPBF?

IRFH7932TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7932TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7932TRPBF?

For technical support, including IRFH7932TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7932TRPBF requirements.

6.How does Aetrix verify that IRFH7932TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH7932TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7932TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH7932TRPBF?

All IRFH7932TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7932TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7932TRPBF part is unused and in its original packaging.

Return procedure for IRFH7932TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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