Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFH7934TR2PBF

Part No.:
IRFH7934TR2PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixIRFH7934TR2PBF.pdf
Description:
MOSFET N-CH 30V 24A 5X6 PQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,179

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFH7934TR2PBF from Infineon Technologies is a 30V N-channel Trench MOSFET in PQFN 5×6 mm package, featuring RDS(on) = 2.9 mΩ (typ) at VGS = 10 V, Qg = 20 nC, and rated for 19 A continuous drain current at TA = 70°C. It serves as a high-efficiency synchronous rectifier and primary-side switch in notebook CPU VRMs and isolated DC-DC converters for networking infrastructure.

For engineers reviewing the IRFH7934TR2PBF datasheet, IRFH7934TR2PBF pinout, IRFH7934TR2PBF application, or IRFH7934TR2PBF equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, fully characterized avalanche capability (EAS = 97 mJ), low thermal resistance (RθJA = 40 °C/W), and RoHS-compliant lead-free construction qualified to 260°C reflow.

Technical Context

This HEXFET power MOSFET employs Infineon's Trench technology to achieve ultra-low on-resistance and fast switching with minimal gate charge. Its optimized cell layout and large source lead reduce parasitic inductance and improve solder joint reliability under thermal cycling.

The device integrates a robust body diode with trr = 20–30 ns and Qrr = 28–42 nC, enabling efficient operation in hard-switched synchronous buck topologies. Avalanche-rated design ensures ruggedness against inductive turn-off transients in unclamped inductive load conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage compatible with 24 V input bus and 12 V output rails in server VRMs.
RDS(on) @ VGS = 10 V2.9 mΩ (typ) - Enables <1.5 W conduction loss at 24 A, critical for high-current CPU core rail efficiency.
Qg20 nC - Supports high-frequency switching (>1 MHz) with low gate drive power and reduced EMI.
tr/tf16 ns / 7.5 ns - Fast edge rates minimize switching transition losses in sync-buck converters.
RθJA40 °C/W - Allows 19 A continuous operation at 70°C ambient without forced airflow in compact PCB layouts.
EAS97 mJ - Withstands single-pulse inductive energy up to 2.5 A × 15 V × 2.6 μs, ensuring system-level fault robustness.
VSD1.0 V (max) - Low body diode forward voltage reduces reverse recovery losses during dead-time conduction.

Pinout & Package

PQFN 5 mm × 6 mm package with exposed thermal pad (Option "E"), 8-pin configuration (3-source, 3-drain, 1-gate, 1-source sense), optimized for low-inductance high-current routing and enhanced thermal dissipation via bottom-side copper area.

Pin/TerminalCircuit RoleDesign Meaning
GGateControl terminal accepting 0–10 V logic-level drive; low Ciss (3100 pF) minimizes Miller effect.
D1–D3DrainHigh-side switching node connection; paralleled pins reduce current density and package inductance.
S1–S3SourcePower return path; multiple pins lower source loop inductance and improve stability in high-di/dt applications.
SSSource SenseRemote Kelvin sensing point for accurate gate drive referencing, reducing VGS error due to source inductance.

Key Features

FeatureDesign Value
Ultra-low RDS(on) at 4.5 V3.5 mΩ max - Enables direct compatibility with 5 V PWM controllers without level-shifting.
Low Qgd/Qg ratio6.3 nC / 20 nC = 0.315 - Improves hard-switching immunity and reduces voltage overshoot during turn-off.
100% RG tested1.7–3.1 Ω - Ensures consistent gate drive timing across production lots, critical for multi-phase current sharing.
Halogen-free & RoHSQualified to JEDEC J-STD-020 260°C reflow - Supports lead-free manufacturing without reliability compromise.
Large source leadEnhanced mechanical anchoring - Reduces solder joint fatigue failure risk in thermally cycled server and telecom equipment.

Applications

Notebook CPU Voltage RegulatorIsolated Telecom DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to Intel/AMD mobile processors.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 300–1000 kHz with precise dead-time control.

Use Value: 2.9 mΩ RDS(on) cuts conduction loss by >35% vs. legacy 5 mΩ MOSFETs, improving VR efficiency from 88% to 92% at 20 A.

Use Scenario: Primary-side active clamp forward or LLC resonant converter in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching FET handling 12–24 A peak current with 30 V blocking capability.

Use Value: 97 mJ avalanche rating allows safe operation during transient overloads without external snubbers, reducing BOM count.

Industrial Motor Drive InverterAutomotive ADAS Power Supply

Use Scenario: Half-bridge stage in 24 V BLDC motor control for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current.

Use Value: 20–30 ns trr and 28–42 nC Qrr minimize cross-conduction losses and EMI during commutation.

Use Scenario: Secondary-side synchronous rectification in 12 V → 3.3 V/5 V PMIC for radar and camera modules.

IC Role / Device Role / Timing Role: High-efficiency rectifier operating in continuous conduction mode at 500 kHz.

Use Value: PQFN 5×6 mm footprint enables dense layout while maintaining RθJA ≤ 40 °C/W for junction temperature control under 85°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFH7107TRPBFRDS(on) = 4.2 mΩ @ 10 V; Qg = 15 nC; same PQFN 5×6 mm packageHigher conduction loss but lower gate charge - better suited for higher-frequency, lower-current designsSelect when switching frequency exceeds 1.5 MHz and average current stays below 12 A.
SI7850DP-T1-GE3RDS(on) = 3.0 mΩ @ 10 V; Qg = 22 nC; SO-8 package, no Kelvin sourceLarger RθJA (62 °C/W); no source sense pin - limits high-current phase-leg accuracyChoose only for cost-sensitive, non-multiphase, ≤10 A applications where thermal margin is ample.

Compared with IRFH7934TR2PBF, IRFH7107TRPBF trades conduction efficiency for faster switching, while SI7850DP-T1-GE3 sacrifices thermal performance and sensing precision for legacy SO-8 compatibility-neither offers identical combination of low RDS(on), low Qg, Kelvin source, and 40 °C/W RθJA.

Availability

IRFH7934TR2PBF is available at Aetrix Electronics and suitable for notebook VRMs, telecom DC-DC converters, industrial motor drives, and automotive ADAS power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IRFH7934TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's OptiMOS™ Trench-MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100°C ambient temperature?

At TA = 100°C, derated by the linear derating factor of 0.025 W/°C from PD = 3.1 W at 25°C, the maximum continuous drain current is approximately 12.5 A (based on RDS(on) = 3.5 mΩ and thermal limit). This assumes adequate PCB copper area and no forced airflow.

Does IRFH7934TR2PBF support 4.5 V gate drive in production systems?

Yes - its RDS(on) is specified at 4.5 V (3.5 mΩ max), and gate threshold voltage VGS(th) ranges from 1.35 V to 2.35 V, ensuring full enhancement with standard 5 V logic drivers. No gate driver IC is required for most buck controller interfaces.

Is the PQFN 5×6 mm package compatible with standard reflow profiles?

Yes - it is qualified to JEDEC J-STD-020 for lead-free reflow up to 260°C peak temperature. The exposed thermal pad requires appropriate stencil design (≥70% paste coverage) and thermal via placement per IPC-7093 guidelines to ensure void-free solder joints.

How does the source sense (SS) pin improve system performance?

The SS pin provides a Kelvin connection to the source metallization, decoupling gate drive reference from high-di/dt source loop voltage drop. This prevents false turn-off during fast current transients and improves current-sharing accuracy in multi-phase VRMs by stabilizing effective VGS.

IRFH7934TR2PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Cut Tape (CT)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 4.5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (5x6)

IRFH7934TR2PBF FAQ

1.How can I place an order for IRFH7934TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7934TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7934TR2PBF reliable?

The price and inventory of IRFH7934TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7934TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH7934TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7934TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7934TR2PBF?

IRFH7934TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7934TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7934TR2PBF?

For technical support, including IRFH7934TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7934TR2PBF requirements.

6.How does Aetrix verify that IRFH7934TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH7934TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7934TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH7934TR2PBF?

All IRFH7934TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7934TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7934TR2PBF part is unused and in its original packaging.

Return procedure for IRFH7934TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFH7934TR2PBF Tags

  • IRFH7934TR2PBF
  • IRFH7934TR2PBF PDF
  • IRFH7934TR2PBF Datasheet
  • IRFH7934TR2PBF Specifications
  • IRFH7934TR2PBF Images
  • Infineon Technologies
  • Infineon Technologies IRFH7934TR2PBF
  • Buy IRFH7934TR2PBF
  • IRFH7934TR2PBF Price
  • IRFH7934TR2PBF Distributor
  • IRFH7934TR2PBF Supplier
  • IRFH7934TR2PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER