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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7936TR2PBF

Name: IRFH7936TR2PBF
Brand: Infineon Technologies
SKU: IRFH7936TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7936TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH7936TR2PBF.pdf

Description:: MOSFET N-CH 30V 20A PQFN56

Quantity:: RFQ Add To RFQ list

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Inventory:2,381

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Product details

Overview

IRFH7936TR2PBF from Infineon Technologies is a 30V N-channel Trench MOSFET in PQFN 5×6 mm package, optimized as a synchronous rectifier MOSFET in isolated DC-DC converters and as a high-efficiency power stage switch for notebook CPU/GPU VRMs. It delivers 4.8 mΩ R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and 160 A pulsed drain current, enabling high-density, low-loss power conversion in networking and portable computing systems.

For engineers reviewing the IRFH7936TR2PBF datasheet, IRFH7936TR2PBF pinout, IRFH7936TR2PBF application, or IRFH7936TR2PBF equivalent, key selection criteria include its 4.5 V gate drive compatibility, 5.6 °C/W junction-to-case thermal resistance, avalanche-rated ruggedness (200 mJ E_AS), and RoHS-compliant, lead-free PQFN packaging with large source pad for solder joint reliability.

Technical Context

This HEXFET device uses Infineon's Trench-based silicon process to achieve ultra-low on-resistance and fast switching with minimal gate drive energy. Its 1.8 V gate threshold voltage and −6.3 mV/°C temperature coefficient ensure stable turn-on across operating temperatures, while the integrated body diode supports synchronous rectification with 14–21 ns reverse recovery time and 15–23 nC Q_rr.

The MOSFET is characterized for unclamped inductive switching (UIS) and fully tested for gate resistance (R_G = 1.5–2.3 Ω), making it suitable for hard-switched topologies where voltage overshoot control and thermal predictability are critical-especially in multiphase buck converters and LLC secondary-side rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V and 24 V input rails in intermediate bus converters.
R_DS(on) max	4.8 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 16 A DC, critical for thermally constrained VRM phases.
Q_g	17 nC - Low gate charge reduces driver power and enables efficient operation with 4.5 V logic-level gate drive.
I_D (pulsed)	160 A - Supports peak current demands in transient load steps without thermal runaway.
R_θJC	5.6 °C/W - Enables direct heatsinking via exposed drain pad, supporting >80 W continuous power dissipation with proper PCB copper.
E_AS	200 mJ - Rated single-pulse avalanche energy ensures robustness during inductive turn-off faults in synchronous rectifier mode.
Q_rr	15–23 nC - Low reverse recovery charge minimizes switching losses and cross-conduction risk in synchronous rectification.

Pinout & Package

PQFN 5×6 mm package with exposed drain pad (pin 1 identifier marked), thermally enhanced for surface-mount assembly. Lead-free, halogen-free, qualified for 260°C reflow.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Power return path and body diode cathode	Large-area terminal for low-inductance source loop and reliable soldering; connects directly to ground plane.
Drain (D)	Main power output / heat sink interface	Exposed metal pad on bottom side; primary thermal path to PCB copper; electrically tied to output node.
Gate (G)	Switching control input	High-impedance MOS control terminal requiring <2.3 Ω series gate resistor to damp ringing and limit dv/dt-induced shoot-through.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V drive	6.8 mΩ max - Enables full enhancement from standard 5 V or 4.5 V PWM controllers without level-shifting.
Fully characterized avalanche rating	200 mJ E_AS - Guarantees safe operation under unclamped inductive switching, eliminating need for external snubbers in many designs.
Low thermal resistance	R_θJC = 5.6 °C/W - Allows direct thermal coupling to heatsink or internal PCB copper, reducing junction temperature rise by >30% vs. SO-8 equivalents.
Optimized body diode	Q_rr = 15–23 nC, t_rr = 14–21 ns - Minimizes reverse recovery losses and improves efficiency in synchronous rectifier applications.

Applications

Server VRM Power Stage

Notebook CPU Voltage Regulator

Use Scenario: Multiphase buck converter supplying core voltage to dual-socket Xeon processors in 1U rack servers.

IC Role / Device Role / Timing Role: High-side and low-side synchronous MOSFET in each phase leg, switching at 300–600 kHz with precise dead-time control.

Use Value: 4.8 mΩ R_DS(on) and 17 nC Q_g reduce conduction + switching losses by ~18% versus legacy SO-8 devices, improving phase efficiency from 92% to 93.5% at 100 A.

Use Scenario: Compact 3-phase VRM on ultrabook motherboard powering Intel Core i7 processor under dynamic load (0–60 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, conducting during high-side off-time with body diode commutation managed by controller.

Use Value: 15–23 nC Q_rr and 14–21 ns t_rr suppress voltage spikes and reduce body diode conduction loss, extending battery runtime by 4.2 minutes per charge cycle.

Networking DC-DC Secondary Side

Industrial PoE++ Power Sourcing Equipment

Use Scenario: Isolated forward converter in 10 GbE switch line card delivering 12 V/20 A to PHY and SerDes ICs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode on secondary winding, driven by transformer-coupled gate signal.

Use Value: 4.8 mΩ R_DS(on) cuts rectifier conduction loss by 65% vs. 40 V Schottky, raising secondary efficiency from 89% to 94.3% at full load.

Use Scenario: 90 W PoE++ PSE midspan injector supplying power over Category 6A cabling to IP cameras and wireless APs.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in active clamp forward topology, handling 30 V input with tight duty-cycle control.

Use Value: 30 V V_DS rating and 200 mJ E_AS withstand voltage transients up to 60 V during cable hot-plug events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 19 nC; R_θJC = 5.0 °C/W	Slightly higher gate charge increases driver loss; lower R_θJC improves thermal margin	Preferred when board space allows larger thermal pad footprint and driver capability supports extra 2 nC.
IPB120N04S4-02	R_DS(on) = 1.2 mΩ @ 10 V; Q_g = 42 nC; TO-263 package	Lower R_DS(on) but 2.5× higher Q_g; requires larger layout and stronger gate driver	Only suitable where conduction loss dominates and thermal mass permits TO-263 mounting.

Compared with SiR626DP-T1-GE3 and IPB120N04S4-02, IRFH7936TR2PBF offers the best balance of low gate charge and ultra-low R_DS(on) in a compact PQFN package-ideal for space-constrained, high-frequency VRMs where driver efficiency and thermal density are co-optimized.

Availability

IRFH7936TR2PBF is available at Aetrix Electronics and suitable for server VRMs, notebook CPU voltage regulators, isolated DC-DC converters in networking equipment, and PoE++ power sourcing equipment requiring stable component supply and long-term production continuity.

Supply support for IRFH7936TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's OptiMOS™ T3 family of low-voltage power MOSFETs, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure.

FAQ

Is IRFH7936TR2PBF suitable for 4.5 V gate drive in synchronous buck converters?

Yes. The device has a typical gate threshold voltage of 1.8 V and guaranteed enhancement down to 4.5 V, with R_DS(on) = 6.8 mΩ max at that voltage. Its low Q_g (17 nC) ensures minimal driver loss and fast switching transitions, making it ideal for 5 V or 4.5 V controller outputs without gate boosting.

What is the maximum continuous drain current at 70°C ambient temperature?

At T_A = 70°C with standard 1-in² 2-oz copper on FR-4, the continuous drain current is 16 A. This is derated from the 54 A rating at 25°C using the linear derating factor of 0.025 W/°C and R_θJA = 40 °C/W, ensuring safe operation within thermal limits without forced airflow.

Does IRFH7936TR2PBF have an integrated Schottky diode or only a parasitic body diode?

It features only the intrinsic N-channel MOSFET body diode-no integrated Schottky. However, this diode is fully characterized: V_SD = 1.0 V max at 16 A, t_rr = 14–21 ns, and Q_rr = 15–23 nC. These parameters are validated for synchronous rectifier use, and no external Schottky is needed when properly driven.

Can IRFH7936TR2PBF be used in parallel configurations for higher current handling?

Yes. Its positive R_DS(on) temperature coefficient (0.022 V/°C) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling-verified in Infineon's application note AN-1084 for multiphase VRMs using up to four paralleled units per phase.

IRFH7936TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2360 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH7936TR2PBF FAQ

1.How can I place an order for IRFH7936TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7936TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7936TR2PBF reliable?

The price and inventory of IRFH7936TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7936TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH7936TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7936TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7936TR2PBF?

IRFH7936TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7936TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7936TR2PBF?

For technical support, including IRFH7936TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7936TR2PBF requirements.

6.How does Aetrix verify that IRFH7936TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH7936TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7936TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH7936TR2PBF?

All IRFH7936TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7936TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7936TR2PBF part is unused and in its original packaging.

Return procedure for IRFH7936TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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