Infineon Technologies IRFH8202TRPBF

Overview

IRFH8202TRPBF from Infineon Technologies is a 25 V, 314 A (T_C(Bottom) = 25°C) N-channel Trench MOSFET in PQFN 5×6 mm package, optimized for high-current OR-ing and in-rush current control in 12 V bus systems, featuring 0.90 mΩ typical R_DS(on) at V_GS = 10 V and 1.3 Ω gate resistance.

For engineers reviewing the IRFH8202TRPBF datasheet, IRFH8202TRPBF pinout, IRFH8202TRPBF application, or IRFH8202TRPBF equivalent, key selection criteria include low thermal resistance (0.5 °C/W typ. R_θJC(Bottom)), high pulsed drain current (1256 A), industry-standard pinout compatibility, and RoHS-compliant PQFN packaging for high-density power stages.

Technical Context

This StrongIRFET™ device uses trench-gate silicon technology to achieve ultra-low on-resistance and fast switching with 52 nC typical total gate charge and 17 nC gate-to-drain charge. Its thermal design centers on bottom-side cooling via exposed copper pad, enabling 156 W power dissipation at T_C(Bottom) = 25°C.

The MOSFET supports unclamped inductive switching with 468 mJ single-pulse avalanche energy and exhibits stable threshold voltage (1.80 V typ.) with -6.3 mV/°C temperature coefficient, ensuring robust gate drive margin across -55°C to +150°C junction range.

Key Specifications

Pinout & Package

PQFN 5 mm × 6 mm package with exposed thermal pad on bottom side; 8-pin layout (3×2 source, 1 gate, 1 drain, 3 thermal pads tied to source internally); MSL1 rating, industrial temperature qualification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 25 V N-channel MOSFET applications.

Compared with IRFH5020TRPBF and SISS70DN-T1-GE3, IRFH8202TRPBF delivers the highest continuous current (314 A) and lowest R_DS(on) in a drop-in PQFN 5×6 package, making it optimal for space-constrained, high-efficiency 12 V bus OR-ing and motor inverter designs where thermal headroom is limited.

Availability

IRFH8202TRPBF is available at Aetrix Electronics and suitable for 12 V bus OR-ing, battery-powered motor inverters, high-density DC-DC converters, and in-rush current limiting applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFH8202TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the StrongIRFET™ family of high-current Trench MOSFETs, engineered specifically for high-efficiency, high-power-density DC power conversion and motor control in industrial and computing infrastructure.

FAQ

What is the maximum continuous drain current for IRFH8202TRPBF under real-world PCB cooling?

The datasheet specifies 314 A continuous drain current at T_C(Bottom) = 25°C, assuming the exposed thermal pad is soldered to ≥10 cm² of 2 oz copper on an inner layer. This rating assumes 0.5 °C/W junction-to-case (bottom) thermal resistance and requires adequate airflow or adjacent copper planes to maintain case temperature below 25°C.

Can IRFH8202TRPBF be driven directly by a 3.3 V microcontroller GPIO?

No - its V_GS(th) is 1.35–2.35 V, but R_DS(on) rises sharply below V_GS = 4.5 V (1.40–1.85 mΩ). At 3.3 V, conduction loss exceeds 5× that at 10 V. A dedicated gate driver (e.g., IRS2007) or level-shifting buffer is required for full performance and thermal safety.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the body diode supports 156 A continuous source current and 1256 A pulsed current, with 37 ns typical reverse recovery time and 68 nC Q_rr. However, synchronous gate control is strongly recommended to minimize conduction and recovery losses in high-frequency (>100 kHz) DC-DC converters.

Does IRFH8202TRPBF require special PCB layout considerations beyond standard PQFN guidelines?

Yes - the exposed thermal pad must be connected to ≥4 thermal vias (0.3 mm diameter, 0.6 mm pitch) to inner ground/power planes, and source/drain copper areas should be ≥3 mm wide with minimum 2 oz copper thickness. Gate trace length must be <5 mm and routed away from high-dV/dt nodes to prevent coupling-induced turn-on.