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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH8318TR2PBF

Name: IRFH8318TR2PBF
Brand: Infineon Technologies
SKU: IRFH8318TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH8318TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH8318TR2PBF.pdf

Description:: MOSFET N-CH 30V 21A 5X6 PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH8318TR2PBF from Infineon Technologies is a 30 V, 50 A N-channel PQFN 5×6 mm power MOSFET optimized as a synchronous rectifier in high-frequency buck converters. It features R_DS(on) = 2.5 mΩ (typ) at V_GS = 10 V, Q_g = 19 nC (typ), and ultra-low R_θJC(Bottom) = 1.7 °C/W - enabling high-efficiency, high-density DC/DC conversion in server VRMs and GPU power stages.

For engineers reviewing the IRFH8318TR2PBF datasheet, IRFH8318TR2PBF pinout, IRFH8318TR2PBF application, or IRFH8318TR2PBF equivalent, key selection criteria include its bottom-thermal-pad PQFN package, 4.6 mΩ R_DS(on) at 4.5 V gate drive, 16 ns reverse recovery time, and validated performance in 500 kHz–1 MHz synchronous buck topologies with <1.2 mm profile constraints.

Technical Context

This HEXFET device employs trench-gate silicon technology to achieve low conduction loss and fast switching with minimal gate charge. Its symmetric dual-source layout and exposed copper thermal pad on the bottom surface enable direct PCB heat spreading without heatsink reliance.

The MOSFET integrates a robust body diode with Q_rr = 35–53 nC and t_rr = 16–24 ns, supporting zero-voltage switching (ZVS) transitions in synchronous rectification. Gate threshold voltage is tightly distributed (1.35–2.35 V), ensuring stable turn-on across temperature and supply variations in multi-phase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 12 V input bus with margin for transient spikes in server CPU/GPU power rails
R_DS(on) @ 10 V	2.5 mΩ (typ) - enables ≤1.25 W conduction loss at 50 A, critical for <90% efficiency targets
Q_g	19 nC (typ) - reduces gate driver power and allows use of low-current drivers in compact VRMs
R_θJC(Bottom)	1.7 °C/W - permits >50 W dissipation with ≤85 °C junction rise over 2 oz Cu PCB
t_rr	16 ns (typ) - minimizes body diode reverse recovery loss during high-frequency dead-time operation
I_D @ T_C(Bottom) = 25°C	50 A - defines continuous current capability when mounted on thermally enhanced 4-layer PCB
C_iss	3180 pF - influences gate drive loop stability and EMI filter sizing in MHz-range converters

Pinout & Package

PQFN 5×6 mm Outline "E" package with exposed thermal pad on bottom surface and standard 3-pin (Drain–Source–Gate) pinout compatible with industry-layout footprints. Pin 1 identifier marked on top silkscreen per JEDEC MO-220.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from input rail	Internally connected to bottom thermal pad - must be soldered to large copper pour for thermal and electrical return
Source (S)	Power ground reference node	Double-bonded internal source connections reduce parasitic inductance for high di/dt switching
Gate (G)	Control terminal for channel modulation	Low C_iss/C_rss ratio (3180/270 pF) improves Miller immunity in hard-switching applications

Key Features

Feature	Design Value
Low R_θJC(Bottom)	1.7 °C/W - enables direct thermal coupling to PCB, eliminating need for mechanical heatsinks in 50 A designs
Industry-standard pinout	3-terminal D-S-G layout - ensures drop-in compatibility with competing 30 V PQFN MOSFETs in existing layouts
RoHS & Halogen-free	No lead, bromide, or halogen - meets IPC-1752A material declaration requirements for data center hardware
MSL1 rating	Unlimited floor life at ≤30 °C/60% RH - eliminates bake requirement before SMT reflow

Applications

Server VRM Phase Legs

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to x86 CPUs in cloud infrastructure servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-side/low-side pair, switching at 500 kHz–1 MHz with tight dead-time control.

Use Value: 2.5 mΩ R_DS(on) and 19 nC Q_g reduce conduction + switching losses by ≥18% vs. legacy SO-8 MOSFETs at 50 A.

Use Scenario: Compact, high-density power stage for AI accelerator cards requiring >600 A total output with <1.2 mm height constraint.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck topology, leveraging bottom-thermal-pad for localized heat extraction.

Use Value: 1.7 °C/W R_θJC allows 50 A continuous current with ≤75 °C junction rise on 4-layer 2 oz Cu board - no thermal vias required.

Telecom Rectifier Modules

Industrial PLC Power Supplies

Use Scenario: 48 V–12 V intermediate bus converter in carrier-grade telecom shelf systems with forced-air cooling.

IC Role / Device Role / Timing Role: Primary synchronous FET in fixed-frequency 300 kHz buck stage, operating at 85 °C ambient.

Use Value: Stable R_DS(on) drift (0.019 V/°C BVDSS tempco) and 150 °C T_J rating ensure reliability over full industrial temperature range.

Use Scenario: Input-stage 24 V–5 V buck converter powering I/O modules in factory automation controllers.

IC Role / Device Role / Timing Role: High-efficiency rectifier with integrated body diode used in discontinuous conduction mode (DCM) for light-load efficiency.

Use Value: 16 ns t_rr and 35 nC Q_rr minimize reverse recovery loss, improving light-load efficiency by 3.2% at 10% load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 2.7 mΩ @ 10 V; Q_g = 22 nC; same PQFN 5×6 package	Slightly higher gate charge increases driver loss in >1 MHz designs	Preferred where Vishay's AEC-Q101 qualification is required for industrial control
IPB033N04LG	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 17 nC; TO-263-7 package	Larger footprint and higher R_θJA (35 °C/W) limits power density	Chosen when through-hole assembly or higher single-pulse avalanche energy (200 mJ) is prioritized

Compared with SiR872DP-T1-GE3 and IPB033N04LG, IRFH8318TR2PBF delivers the lowest R_DS(on) × Q_g figure-of-merit (47.5 mΩ·nC) among 30 V PQFN devices, making it optimal for space-constrained, high-frequency synchronous buck stages where thermal resistance and switching loss are co-critical.

Availability

IRFH8318TR2PBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, and telecom rectifier modules requiring stable component supply, MSL1 handling, and RoHS-compliant manufacturing.

Supply support for IRFH8318TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to Infineon's OptiMOS™ T2 power MOSFET family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and thermal scalability are essential.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH8318TR2PBF supports 120 A continuous drain current when the bottom-case temperature is maintained at 25°C, but derates to 21 A at T_C(Bottom) = 100°C per the absolute maximum ratings table. This reflects thermal limitation of the PCB copper area, not silicon capability - proper 4-layer board design with 2 oz Cu and thermal vias sustains >40 A at 100°C case.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 1.35–2.35 V and is fully specified for 0–10 V gate drive. While −5 V to −10 V gate bias can improve dv/dt immunity in high-noise environments, it is not required for functional operation or safe turn-off under normal conditions per datasheet test conditions.

Can IRFH8318TR2PBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized curve shows monotonic increase above 25°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal plane. Derating to 80% of total rated current per device is recommended for long-term reliability.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes - the body diode exhibits t_rr = 16–24 ns and Q_rr = 35–53 nC at I_F = 20 A, making it viable for hard-switched synchronous rectification up to 1 MHz. However, for ZVS or resonant topologies, external Schottky clamping is unnecessary but may further reduce EMI in noise-sensitive applications.

IRFH8318TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 3180 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH8318TR2PBF FAQ

1.How can I place an order for IRFH8318TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8318TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8318TR2PBF reliable?

The price and inventory of IRFH8318TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8318TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH8318TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8318TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8318TR2PBF?

IRFH8318TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8318TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8318TR2PBF?

For technical support, including IRFH8318TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8318TR2PBF requirements.

6.How does Aetrix verify that IRFH8318TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH8318TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8318TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH8318TR2PBF?

All IRFH8318TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8318TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8318TR2PBF part is unused and in its original packaging.

Return procedure for IRFH8318TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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