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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH8321TRPBF

Name: IRFH8321TRPBF
Brand: Infineon Technologies
SKU: IRFH8321TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH8321TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TQFN Exposed Pad

Datasheet:: IRFH8321TRPBF.pdf

Description:: MOSFET N CH 30V 21A PQFN5X6

Quantity:: RFQ Add To RFQ list

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Inventory:4,005

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Product details

Overview

IRFH8321TRPBF from Infineon Technologies is a 30 V, 25 A N-channel enhancement-mode HEXFET Power MOSFET in a PQFN 5 mm × 6 mm package, featuring R_DS(on) = 4.9 mΩ @ V_GS = 10 V and Q_g = 19.4 nC, optimized for high-efficiency synchronous buck converters in server VRMs and POL DC-DC modules.

For engineers reviewing the IRFH8321TRPBF datasheet, IRFH8321TRPBF pinout, IRFH8321TRPBF application, or IRFH8321TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, MSL1 rating, <2.3 °C/W junction-to-case (bottom) thermal resistance, and industry-standard pinout compatibility with multi-vendor PCB layouts.

Technical Context

This MOSFET employs trench-gate silicon technology with source-bonding construction to support 25 A continuous drain current at T_C(Bottom) = 25 °C and withstand unclamped inductive switching up to 93 mJ avalanche energy. Its gate threshold voltage (1.2–2.2 V) and low Q_gd/Q_g ratio (6.7/19.4 nC) enable fast, controllable turn-on/turn-off in high-frequency (>1 MHz) switching topologies.

The device integrates a robust body diode with t_rr = 12–18 ns and Q_rr = 20–30 nC, supporting efficient synchronous rectification. Thermal design leverages direct bottom-side copper exposure-R_θJC(Bottom) ≤ 2.3 °C/W-enabling high power density without external heatsinks in compact VRM footprints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V input bus designs with 2× safety margin against transients in server and telecom POL stages.
R_DS(on) max @ V_GS = 10 V	4.9 mΩ - Enables <1.2 W conduction loss at 20 A, critical for >95% efficiency in 48 V–12 V intermediate bus converters.
Q_g typ.	19.4 nC - Reduces gate drive power and enables use of low-current drivers (e.g., integrated PWM controller outputs) at 500 kHz–1 MHz switching.
T_J max	+150 °C - Rated for sustained operation in thermally constrained server CPU/GPU VRMs with active airflow.
R_θJC(Bottom) max	2.3 °C/W - Allows direct thermal coupling to PCB ground plane, eliminating need for thermal vias or paste in standard 2-layer layouts.
MSL Level	Level 1 - Permits standard reflow without moisture sensitivity concerns, simplifying SMT line integration and reducing bake requirements.
I_D @ T_C(Bottom) = 25 °C	25 A - Matches typical phase-current ratings in dual-phase 50 A VRMs using parallel FETs per phase.

Pinout & Package

PQFN 5 mm × 6 mm, 8-lead, exposed drain pad (D), bottom-thermal interface package with standard SO-8 pinout mapping. Pin 1 marked by notch or dot; leads are gull-wing, RoHS-compliant matte tin finish.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (common source-bonded)	All eight pins connect internally to the drain; serve as high-current output path and primary thermal conduction path to PCB.
Source (S1–S3)	Source terminals (pins 1–3)	Three dedicated source leads minimize source inductance and improve gate drive stability in high-di/dt applications.
G (Gate)	Control gate (pin 4)	Single gate input with low C_iss (2600 pF) and controlled Q_gd/Q_gs ratio for clean switching edge control.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V drive	R_DS(on) = 6.8 mΩ @ V_GS = 4.5 V - Enables full enhancement with 5 V logic-level gate drivers in legacy controller designs.
Ultra-low thermal resistance (bottom)	R_θJC(Bottom) ≤ 2.3 °C/W - Delivers >30% higher power handling vs. SO-8 equivalents at same PCB area, enabling smaller VRM footprints.
Industry-standard pinout	SO-8 compatible layout - Allows drop-in replacement on existing layouts without redesign; supports multi-source supply chain resilience.
Enhanced body diode performance	t_rr = 12 ns, Q_rr = 20 nC - Reduces synchronous rectifier switching loss and EMI in high-frequency buck converters.

Applications

Server Voltage Regulator Modules

Telecom Intermediate Bus Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V input in 1U rack servers.

IC Role / Device Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz with tight duty cycle control.

Use Value: 4.9 mΩ R_DS(on) and 2.3 °C/W thermal resistance reduce phase losses by ≥15% vs. SO-8 alternatives, improving system efficiency and thermal margin.

Use Scenario: 48 V to 12 V isolated/non-isolated intermediate bus converter in 5G base station power shelves.

IC Role / Device Role: Primary-side high-efficiency switch in hard-switched or ZVS-assisted topology with 25 A peak current demand.

Use Value: MSL1 rating and 150 °C T_J max ensure reliability under sustained high ambient temperatures (>70 °C) in sealed outdoor enclosures.

GPU Power Delivery Systems

Industrial PLC I/O Module Supplies

Use Scenario: Compact, high-density point-of-load regulator delivering up to 300 W to discrete GPU memory and logic rails.

IC Role / Device Role: Low-inductance, low-R_DS(on) switch paired with integrated driver IC in 2-layer PCB layout.

Use Value: Three-source-pin configuration minimizes parasitic inductance, suppressing gate oscillation and improving transient response during GPU load steps.

Use Scenario: 24 V input to 3.3/5/12 V regulated outputs powering field I/O, communication interfaces, and microcontrollers in factory automation controllers.

IC Role / Device Role: Main switching element in ruggedized, long-lifecycle DC-DC modules requiring >10-year supply continuity.

Use Value: RoHS-compliant, halogen-free construction and Infineon's industrial qualification support extended product lifecycle and compliance with EU industrial directives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5020TRPBF	R_DS(on) = 2.0 mΩ @ 10 V, Q_g = 44 nC, larger 5×6 mm footprint with different leadframe geometry	Higher current density but slower switching; suited for lower-frequency, higher-current designs where gate drive capability permits	Select when R_DS(on) reduction outweighs gate charge penalty and board space allows revised layout.
SiR872DP-T1-GE3	R_DS(on) = 4.5 mΩ @ 10 V, Q_g = 22.5 nC, identical PQFN 5×6 mm package and pinout	Compatible footprint and drive requirements; slightly lower R_DS(on) but higher Q_g increases driver stress at >1 MHz	Preferred for drop-in replacement where minimal layout change is required and gate drive strength supports 22.5 nC.

Compared with IRFH5020TRPBF, IRFH8321TRPBF trades 2.9 mΩ higher R_DS(on) for 24.6 nC lower Q_g, favoring high-frequency efficiency; versus SiR872DP-T1-GE3, it offers tighter V_GS(th) tolerance (1.2–2.2 V vs. 1.0–2.5 V) and superior avalanche ruggedness (93 mJ vs. 75 mJ), enhancing reliability in unclamped inductive loads.

Availability

IRFH8321TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial PLC power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRFH8321TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's OptiMOS™ 50 V/30 V low-voltage power MOSFET family, engineered specifically for high-efficiency, high-power-density DC-DC conversion in data center, telecom, and industrial infrastructure applications.

FAQ

What is the maximum continuous drain current for IRFH8321TRPBF at 100°C case temperature?

At T_C(Bottom) = 100 °C, the continuous drain current is derated to 17 A per the Absolute Maximum Ratings table. This reflects thermal limitation of the source-bonding technology-not package or die limits-and must be validated with actual PCB thermal design using the provided R_θJC and layout-dependent R_θCA.

Does IRFH8321TRPBF support 4.5 V gate drive in production systems?

Yes. The device guarantees R_DS(on) ≤ 6.8 mΩ at V_GS = 4.5 V and I_D = 16 A, and its V_GS(th) range (1.2–2.2 V) ensures reliable turn-on with 4.5 V logic drivers. Production validation requires verifying gate waveform integrity under worst-case load transients.

How does the PQFN 5×6 mm package improve thermal performance over SO-8?

The PQFN exposes the drain die attach pad directly to the PCB, achieving R_θJC(Bottom) ≤ 2.3 °C/W-over 2× better than typical SO-8 (≈5.5 °C/W). This eliminates thermal bottlenecks through the plastic body and enables >30% higher power dissipation at equal board area and airflow.

Is IRFH8321TRPBF qualified for automotive applications?

No. It carries industrial qualification only (MSL1, consumer-grade reliability testing). Automotive-grade equivalents require AEC-Q101 qualification, different wafer processing, and extended temperature screening-none of which apply to this part number per Infineon's official documentation.

IRFH8321TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-TQFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 83A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.4W (Ta), 54W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH8321TRPBF FAQ

1.How can I place an order for IRFH8321TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8321TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8321TRPBF reliable?

The price and inventory of IRFH8321TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8321TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH8321TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8321TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8321TRPBF?

IRFH8321TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8321TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8321TRPBF?

For technical support, including IRFH8321TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8321TRPBF requirements.

6.How does Aetrix verify that IRFH8321TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH8321TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8321TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH8321TRPBF?

All IRFH8321TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8321TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8321TRPBF part is unused and in its original packaging.

Return procedure for IRFH8321TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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