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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH8324TR2PBF

Name: IRFH8324TR2PBF
Brand: Infineon Technologies
SKU: IRFH8324TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH8324TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH8324TR2PBF.pdf

Description:: MOSFET N-CH 30V 23A/90A PQFN

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Product details

Overview

IRFH8324TR2PBF from Infineon Technologies is a 30 V, 50 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized as a synchronous rectifier in high-frequency buck converters. It delivers R_DS(on) = 3.3 mΩ (typ) at V_GS = 10 V and 4.1 mΩ (max) at V_GS = 10 V, with 14 nC total gate charge and 2.3°C/W junction-to-case (bottom) thermal resistance.

For engineers reviewing the IRFH8324TR2PBF datasheet, IRFH8324TR2PBF pinout, IRFH8324TR2PBF application, or IRFH8324TR2PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, fast switching (t_r = 26 ns, t_f = 8.5 ns), body diode Q_rr = 25–38 nC, and MSL1 qualification for high-reliability surface-mount assembly.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low conduction loss and high switching efficiency in DC-DC power stages. Its PQFN 5×6 mm package features exposed bottom thermal pad and dual-side cooling capability, enabling direct PCB heat sinking with R_θJC(bottom) ≤ 2.3°C/W.

The device supports gate drive voltages from 4.5 V to 10 V, with V_GS(th) = 1.35–2.35 V and negative temperature coefficient for R_DS(on). Its low C_iss = 2380 pF and C_rss = 205 pF support stable operation in hard-switched topologies up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V in buck converters with margin for voltage transients
R_DS(on) max @ V_GS = 10 V	4.1 mΩ - Enables <1.0 W conduction loss at 20 A continuous drain current
R_DS(on) max @ V_GS = 4.5 V	6.3 mΩ - Ensures usable on-resistance under logic-level gate drive in compact controllers
Q_g typ.	14 nC - Reduces gate driver power demand and enables efficient 500 kHz–1 MHz switching
R_θJC(bottom)	2.3°C/W - Allows direct thermal coupling to copper pour for high-power density layouts
I_D @ T_C(bottom) = 25°C	50 A - Sustains full-rated output current when case (bottom) is actively cooled
Q_rr	25–38 nC - Minimizes reverse recovery loss and EMI in synchronous rectification

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom side and standard 3-pin layout (Drain, Source, Gate). Pin 1 identifier marked on top surface per JEDEC MO-220 specification.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from input rail	Internally connected to exposed bottom thermal pad; must be soldered to large PCB copper area for thermal management
Source (S)	Return path for load current and gate reference	Connected to power ground plane; low-inductance routing critical for switching stability
Gate (G)	Control terminal for channel conduction	High-impedance input requiring controlled slew rate; susceptible to ringing without proper gate resistor

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	6.3 mΩ max - Enables use with 5 V or 3.3 V PWM controllers without level-shifting
MSL1 moisture sensitivity	Unlimited floor life at ≤30°C/60% RH - Eliminates bake requirements before reflow
RoHS-compliant, halogen-free	No lead, bromide, or halogen - Meets IPC-1752A environmental compliance for global shipments
Industry-standard pinout	Compatible with common PQFN 5×6 footprints - Simplifies multi-source design and second-sourcing

Applications

Server VRMs

GPU Power Delivery

Use Scenario: High-current, multi-phase buck regulators supplying CPU/GPU cores at ≤1 V, 100+ A.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position of each phase leg.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 6 mΩ devices, improving full-load efficiency by ~0.8%.

Use Scenario: Compact, high-density VRMs on graphics cards where thermal headroom is constrained.

IC Role / Device Role / Timing Role: Bottom-FET in interleaved 2–4 phase converter delivering 0.8–1.2 V at up to 80 A.

Use Value: 2.3°C/W R_θJC(bottom) allows direct thermal transfer to heatsink via PCB, reducing junction temperature rise by 15°C at 50 A.

Telecom DC-DC Modules

Industrial PLC Power Supplies

Use Scenario: 48 V input to 12 V/5 V isolated or non-isolated POL converters in base station equipment.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in high-frequency (≥500 kHz) buck stage.

Use Value: 14 nC Q_g and 8.5 ns t_f minimize switching loss and enable >95% efficiency at 1 MHz operation.

Use Scenario: 24 V industrial input to 3.3 V/5 V/12 V system rails in programmable logic controllers with extended temperature range.

IC Role / Device Role / Timing Role: Low-side switch in robust, long-lifetime buck converters operating from –40°C to +125°C ambient.

Use Value: V_GS(th) = 1.35–2.35 V with –6.2 mV/°C tempco ensures stable turn-on across full industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5020TR2PBF	R_DS(on) = 2.0 mΩ @ 10 V, higher Q_g = 22 nC, same PQFN 5×6 package	Better conduction loss but slower switching; suited for lower-frequency, high-current designs	Select when priority is minimizing I²R loss over switching loss, e.g., <300 kHz operation
SiR872DP-T1-GE3	R_DS(on) = 3.7 mΩ @ 10 V, Q_g = 16 nC, same footprint, Vishay Gen 3 trench MOSFET	Higher body diode V_SD (1.1 V vs. 1.0 V) and slightly higher Q_rr (42 nC)	Valid drop-in for cost-sensitive designs where 0.4 mΩ R_DS(on) penalty is acceptable

Compared with IRFH5020TR2PBF and SiR872DP-T1-GE3, the IRFH8324TR2PBF offers optimal balance of low R_DS(on), moderate Q_g, and industry-leading thermal resistance-making it preferred for high-frequency, thermally constrained synchronous buck stages.

Availability

IRFH8324TR2PBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, and telecom DC-DC modules requiring stable component supply, MSL1 handling, and RoHS-compliant manufacturing.

Supply support for IRFH8324TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to Infineon's OptiMOS™ TrenchMOS family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH8324TR2PBF supports 18 A continuous drain current when the bottom case temperature is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package and internal bond wire capacity-not silicon junction limits alone.

Does this MOSFET require a gate resistor for stable operation?

Yes-a series gate resistor (typically 2.2–10 Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance (C_rss) and PCB inductance. Without it, ringing during switching can exceed V_GS rating and cause erratic turn-on/turn-off behavior.

Can IRFH8324TR2PBF be used in avalanche-rated circuits?

No-it is not characterized or guaranteed for repetitive avalanche operation. The datasheet specifies only single-pulse avalanche energy (E_AS = 94 mJ at I_AS = 20 A), intended for transient fault protection-not sustained clamping or snubberless designs.

Is the thermal pad electrically isolated from the drain terminal?

No-the exposed bottom thermal pad is internally connected to the drain (D) terminal. PCB layout must treat the pad as a high-voltage node and isolate it from other copper layers using appropriate clearance and solder mask definition.

IRFH8324TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Ta), 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2380 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 54W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH8324TR2PBF FAQ

1.How can I place an order for IRFH8324TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8324TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8324TR2PBF reliable?

The price and inventory of IRFH8324TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8324TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH8324TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8324TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8324TR2PBF?

IRFH8324TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8324TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8324TR2PBF?

For technical support, including IRFH8324TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8324TR2PBF requirements.

6.How does Aetrix verify that IRFH8324TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH8324TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8324TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH8324TR2PBF?

All IRFH8324TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8324TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8324TR2PBF part is unused and in its original packaging.

Return procedure for IRFH8324TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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