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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH8325TR2PBF

Name: IRFH8325TR2PBF
Brand: Infineon Technologies
SKU: IRFH8325TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH8325TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH8325TR2PBF.pdf

Description:: MOSFET N-CH 30V 17A 5X6 PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH8325TR2PBF from Infineon Technologies is a 30 V, 25 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized as synchronous rectifier in high-frequency buck converters. It delivers R_DS(on) of 4.1 mΩ (typ) at V_GS = 10 V and 6.0 mΩ (max) at V_GS = 4.5 V, with 15 nC total gate charge and 2.3°C/W junction-to-case (bottom) thermal resistance.

For engineers reviewing the IRFH8325TR2PBF datasheet, IRFH8325TR2PBF pinout, IRFH8325TR2PBF application, or IRFH8325TR2PBF equivalent, key selection criteria include low-profile thermal performance, fast switching (t_r = 16 ns, t_f = 7.1 ns), body diode recovery (Q_rr = 25–38 nC), and compatibility with 4.5 V logic-level drive in DC-DC power stages.

Technical Context

This MOSFET employs trench-gate silicon technology with source-bonding construction to achieve high current density and low conduction loss. Its PQFN 5×6 mm Outline "E" package features exposed drain pad on bottom for direct PCB thermal coupling and standard industry pinout (G-D-S layout).

The device operates with gate threshold voltage V_GS(th) = 1.35–2.35 V and exhibits positive temperature coefficient for R_DS(on), enabling inherent current sharing in paralleled configurations. Avalanche-rated (E_AS = 300 mJ @ I_D = 20 A), it supports unclamped inductive switching in synchronous rectification topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters
R_DS(on) max @ V_GS = 10 V	5.0 mΩ - Enables <1 W conduction loss at 20 A continuous drain current
R_DS(on) max @ V_GS = 4.5 V	7.2 mΩ - Supports efficient operation with 5 V or 4.5 V gate drive in logic-level synchronous buck stages
Q_g typ	15 nC - Low gate charge reduces driver power and enables >1 MHz switching without excessive gate loss
R_θJC (bottom)	2.3°C/W - Enables direct thermal path to PCB copper, critical for high-power-density 5×6 mm footprint
I_D @ T_C(bottom) = 25°C	25 A - Continuous current rating defined at case (PCB) temperature, not ambient, reflecting real thermal mounting condition
t_r/t_f	16 ns / 7.1 ns - Fast edge rates minimize switching transition losses in high-frequency (>500 kHz) converters

Pinout & Package

PQFN 5×6 mm Outline "E" package with exposed drain pad on bottom surface and standard G-D-S terminal arrangement. Pin 1 identifier marked on top surface per JEDEC MO-220 standard.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–20 V gate drive; threshold 1.35–2.35 V; requires low-impedance driver due to 1.1 Ω internal gate resistance
D (Drain)	High-side power node	Internally connected to exposed bottom copper pad; primary thermal and current path to PCB ground plane
S (Source)	Reference node / return path	Connected to source bonding wires; serves as local reference for gate drive and current sensing in synchronous rectifier configuration

Key Features

Feature	Design Value
Low R_θJC (bottom)	2.3°C/W - Enables >90% of junction heat to transfer directly to PCB, reducing thermal derating in compact layouts
Low profile (<1.2 mm)	1.1 mm max height - Allows stacking under low-clearance shields and improves airflow in multi-layer power modules
Industry-standard pinout	G-D-S layout - Ensures mechanical and routing compatibility with alternative 5×6 mm MOSFETs from multiple vendors
RoHS & halogen-free	No Pb, Br, or Cl - Meets IPC-J-STD-609A Class 1 and automotive ELV compliance requirements
MSL1 rating	Unlimited floor life at ≤30°C/60% RH - Eliminates bake requirement prior to reflow, reducing manufacturing cost and risk

Applications

Server VRM

GPU Power Delivery

Use Scenario: 48 V to 0.8 V conversion for CPU core supply in dual-phase interleaved buck regulators.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating at 800 kHz–1 MHz, replacing Schottky diodes to reduce conduction loss and improve efficiency.

Use Value: 4.1 mΩ R_DS(on) cuts rectifier loss by >60% vs. discrete diode solution, enabling >92% full-load efficiency at 200 A output.

Use Scenario: Point-of-load converter supplying GPU memory (GDDR6) with tight transient response and low noise.

IC Role / Device Role / Timing Role: High-side switch in 3-phase multiphase buck stage, driven by integrated controller with adaptive dead-time control.

Use Value: 15 nC Q_g and 7.1 ns t_f support precise timing control and minimize shoot-through risk during fast load transients.

Industrial PLC I/O Module

Automotive ADAS Camera Power

Use Scenario: 24 V input to 5 V/3.3 V auxiliary rail for isolated communication interfaces and sensor biasing.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward or LLC resonant converter.

Use Value: Body diode V_SD = 1.0 V and Q_rr = 25–38 nC ensure low reverse recovery loss during zero-voltage switching transitions.

Use Scenario: Compact 12 V to 1.2 V core supply for image signal processor (ISP) in rear-view camera ECU.

IC Role / Device Role / Timing Role: Low-voltage synchronous MOSFET in single-phase buck converter with 4.5 V gate drive from PMIC.

Use Value: R_DS(on) = 6.0 mΩ @ 4.5 V ensures stable regulation under cold-crank (6.5 V input) while maintaining <50 mW conduction loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 4.2 mΩ @ 10 V; Q_g = 17.5 nC; same PQFN 5×6 mm package	Higher gate charge increases driver loss at >1 MHz; identical thermal interface	Prefer when higher avalanche energy (E_AS = 420 mJ) is required over ultra-low Q_g
DMTH3006LPS-13	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 13.5 nC; slightly lower R_θJC = 2.1°C/W	Lower Q_g improves high-frequency efficiency but reduced V_GS(max) = ±12 V limits gate drive headroom	Choose for 500 kHz–2 MHz designs where gate drive voltage is strictly regulated to 12 V max

Compared with SiR872DP-T1-GE3 and DMTH3006LPS-13, IRFH8325TR2PBF offers best-in-class balance of low Q_g (15 nC), robust ±20 V gate rating, and proven 30 V avalanche capability-making it optimal for high-reliability, high-frequency synchronous rectification where gate drive flexibility and ruggedness are prioritized.

Availability

IRFH8325TR2PBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.

Supply support for IRFH8325TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and automotive power systems.

FAQ

What is the maximum recommended gate drive voltage for IRFH8325TR2PBF?

The absolute maximum V_GS rating is ±20 V, but Infineon recommends limiting gate drive to +10 V to +15 V for reliable long-term operation. Exceeding +15 V increases gate oxide stress and accelerates wear-out, especially under high-temperature conditions. The device achieves full enhancement at V_GS ≥ 4.5 V, making it compatible with standard logic-level drivers.

Can IRFH8325TR2PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (dR_DS(on)/dT_J > 0) enables natural current sharing across paralleled units. To ensure balanced operation, use matched gate drive impedance, symmetrical PCB layout, and shared thermal vias to the same copper pour. Derate total current by 10% versus sum of individual ratings to account for layout-induced imbalances.

Does IRFH8325TR2PBF require a gate resistor for stability?

A gate resistor (typically 1–10 Ω) is required to dampen ringing caused by gate loop inductance and MOSFET input capacitance (C_iss = 2487 pF). Without it, overshoot and oscillation can exceed V_GS(max), risking gate oxide failure. The internal R_G = 1.1 Ω is insufficient for most layouts; external series resistance must be added close to the gate pin.

Is the PQFN 5×6 mm package of IRFH8325TR2PBF lead-free and RoHS-compliant?

Yes-the "PbF" suffix confirms full compliance with RoHS Directive 2011/65/EU and J-STD-609A Class 1. It contains no lead, brominated flame retardants, or halogenated compounds. The package uses matte tin plating on terminals and meets JEDEC MSL1 moisture sensitivity level, allowing indefinite storage at ≤30°C/60% RH without baking before reflow.

IRFH8325TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2487 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH8325TR2PBF FAQ

1.How can I place an order for IRFH8325TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8325TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8325TR2PBF reliable?

The price and inventory of IRFH8325TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8325TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH8325TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8325TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8325TR2PBF?

IRFH8325TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8325TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8325TR2PBF?

For technical support, including IRFH8325TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8325TR2PBF requirements.

6.How does Aetrix verify that IRFH8325TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH8325TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8325TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH8325TR2PBF?

All IRFH8325TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8325TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8325TR2PBF part is unused and in its original packaging.

Return procedure for IRFH8325TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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