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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH8330TR2PBF

Name: IRFH8330TR2PBF
Brand: Infineon Technologies
SKU: IRFH8330TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH8330TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH8330TR2PBF.pdf

Description:: MOSFET N-CH 30V 14A 5X6 PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:7,134

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Product details

Overview

IRFH8330TR2PBF from Infineon Technologies is a 30 V, 56 A (T_c=25°C) N-channel Trench MOSFET in PQFN 5×6 mm package, optimized as synchronous rectifier and control switch in high-frequency buck converters. It delivers R_DS(on) = 5.3 mΩ (typ.) at V_GS = 10 V, Q_g = 9.3 nC (typ.), and thermal resistance R_θJC(bottom) = 3.6°C/W.

For engineers reviewing the IRFH8330TR2PBF datasheet, IRFH8330TR2PBF pinout, IRFH8330TR2PBF application, or IRFH8330TR2PBF equivalent, key selection factors include low gate charge for fast switching, ultra-low R_DS(on) at 4.5 V drive, industry-standard PQFN pinout compatibility, and MSL1 reliability for high-volume SMT assembly.

Technical Context

This MOSFET uses Infineon's StrongIRFET™ trench-gate process to achieve high current density and low conduction loss. Its 5×6 mm PQFN package features bottom-side thermal pad for direct PCB heat transfer and supports continuous drain current up to 56 A at case temperature of 25°C.

The device exhibits V_GS(th) = 1.8 V (typ.), g_fs = 61 S, and C_iss = 1450 pF at V_DS = 0 V - enabling efficient operation in 300–1000 kHz DC-DC topologies with minimal switching loss and body diode recovery time t_rr = 14 ns (typ.).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications
R_DS(on) @ V_GS=10 V	5.3 mΩ (typ.) - Enables <1 W conduction loss at 20 A output current
R_DS(on) @ V_GS=4.5 V	7.7 mΩ (typ.) - Supports logic-level gate drive in 5 V or 3.3 V controller systems
Q_g	9.3 nC (typ.) - Reduces gate driver power requirement and enables <20 ns turn-on delay
R_θJC(bottom)	3.6°C/W - Allows >35 W power dissipation with 100°C junction-to-case ΔT
t_rr	14 ns (typ.) - Minimizes reverse recovery loss in synchronous buck freewheeling phase
I_D @ T_c=25°C	56 A - Supports high-current POL converters without external heatsinking

Pinout & Package

PQFN 5 mm × 6 mm, 8-pin, exposed thermal pad (bottom-side), RoHS-compliant, MSL1 rated.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to die backside and thermal pad - primary current path and heat conduction path to PCB
5	Gate (G)	Control terminal requiring ≤20 V drive; low Q_g enables fast edge rates with standard gate drivers
6	Source (S)	Reference node for gate drive and current sensing; tied to power ground plane in buck layout

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	7.7 mΩ (typ.) - Eliminates need for level-shifting gate drive in 5 V/3.3 V controller designs
Bottom-side thermal pad	R_θJC = 3.6°C/W - Enables >10 W higher power handling vs. SO-8 equivalents at same board area
Industry-standard PQFN pinout	Compatible with IRF66xx, SiR62x, and CSD185xx footprints - simplifies multi-source design migration
MSL1 qualification	Unlimited floor life at ≤30°C/60% RH - eliminates bake requirements before reflow
Body diode t_rr	14 ns (typ.) - Reduces shoot-through risk and EMI in synchronous rectification

Applications

Server VRM

GPU Power Delivery

Use Scenario: 4-phase 300 A VRM supplying CPU core voltage from 12 V input.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in high-side/low-side buck stage operating at 600–800 kHz.

Use Value: 5.3 mΩ R_DS(on) and 9.3 nC Q_g reduce conduction + switching losses by ~18% vs. SO-8 alternatives at 20 A per phase.

Use Scenario: Dual-rail 1.0 V/0.8 V GPU core/memory power supply with tight transient response.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter with 1 MHz switching frequency.

Use Value: 14 ns body diode t_rr and 7.7 mΩ R_DS(on) at 4.5 V enable stable light-load efficiency and minimize voltage droop during GPU burst loads.

Telecom DC-DC

Industrial PLC I/O Module

Use Scenario: 48 V to 12 V intermediate bus converter in 1 RU telecom shelf.

IC Role / Device Role / Timing Role: Primary control MOSFET in active-clamp forward or synchronous buck topology.

Use Value: 30 V V_DS rating and 3.6°C/W R_θJC allow compact thermal design meeting NEBS GR-63-CORE airflow constraints.

Use Scenario: 24 V input to 3.3 V/5 V isolated power for analog sensor interface and microcontroller.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback or forward converter.

Use Value: MSL1 rating and -55°C to +150°C T_J range ensure long-term reliability in unventilated industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPbF	R_DS(on) = 7.0 mΩ @ 10 V; Q_g = 12.5 nC; PQFN 5×6 but older generation	Higher switching loss at >500 kHz; less optimized for 4.5 V drive	Prefer IRFH8330TR2PBF for new designs targeting <10 ns t_d(off) and logic-level gate compatibility
CSD18540Q5AT	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 11.4 nC; same package but TI process	Slightly higher Q_g increases gate drive loss; different V_GS(th) distribution affects turn-on timing margin	IRFH8330TR2PBF offers lower Q_g and tighter V_GS(th) spec (±0.5 V), improving timing predictability in multi-phase sync

Compared with IRF6642TRPbF and CSD18540Q5AT, IRFH8330TR2PBF provides the lowest Q_g/R_DS(on) ratio among PQFN 5×6 30 V MOSFETs, delivering superior efficiency in high-frequency, high-current POL converters where gate drive power and thermal management are critical.

Availability

IRFH8330TR2PBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery modules, and telecom DC-DC converters requiring stable component supply, high-reliability packaging, and consistent parametric performance across production lots.

Supply support for IRFH8330TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers high-current, low-R_DS(on) MOSFETs optimized for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and computing infrastructure.

FAQ

What is the maximum continuous drain current for IRFH8330TR2PBF at 100°C case temperature?

The maximum continuous drain current is 35 A when the case temperature (T_c) is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating at elevated temperatures and assumes proper PCB copper area and thermal via design per AN-1136.

Does IRFH8330TR2PBF require a gate resistor for stability in high-speed switching?

A gate resistor of 1.8 Ω is used in the datasheet's switching characterization (td(on)/td(off)), confirming stable operation without oscillation. For most 500–1000 kHz buck applications, a 1–5 Ω series resistor is recommended to dampen ringing and control dV/dt, especially with high-current gate drivers.

Is the thermal pad on the bottom of the PQFN package electrically connected to the drain?

Yes, the exposed thermal pad is internally connected to the drain (D) terminals. It must be soldered to a large PCB copper pour tied to the drain net to ensure both thermal performance and electrical integrity. No isolation or floating mounting is permitted.

Can IRFH8330TR2PBF be used as a replacement for SO-8 packaged MOSFETs in existing layouts?

No - the PQFN 5×6 mm footprint differs significantly from SO-8. While the pin function mapping (G, S, D) is compatible, mechanical dimensions, pad layout, and thermal pad requirements are not interchangeable. Migration requires PCB redesign per Infineon's AN-1136 footprint guidelines.

IRFH8330TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH8330TR2PBF FAQ

1.How can I place an order for IRFH8330TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8330TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8330TR2PBF reliable?

The price and inventory of IRFH8330TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8330TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH8330TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8330TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8330TR2PBF?

IRFH8330TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8330TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8330TR2PBF?

For technical support, including IRFH8330TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8330TR2PBF requirements.

6.How does Aetrix verify that IRFH8330TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH8330TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8330TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH8330TR2PBF?

All IRFH8330TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8330TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8330TR2PBF part is unused and in its original packaging.

Return procedure for IRFH8330TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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