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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH8330TRPBF

Name: IRFH8330TRPBF
Brand: Infineon Technologies
SKU: IRFH8330TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH8330TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH8330TRPBF.pdf

Description:: MOSFET N-CH 30V 17A/56A PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH8330TRPBF from Infineon Technologies is a 30 V, 56 A (T_c=25°C) N-channel Trench MOSFET in PQFN 5×6 mm package, optimized as synchronous rectifier and control switch in high-frequency buck converters. It delivers R_DS(on) = 5.3 mΩ @ V_GS=10 V, Q_g = 9.3 nC, and thermal resistance R_θJC(bottom) = 3.6 °C/W for high-efficiency DC-DC power stages in server VRMs and telecom POL modules.

For engineers reviewing the IRFH8330TRPBF datasheet, IRFH8330TRPBF pinout, IRFH8330TRPBF application, or IRFH8330TRPBF equivalent, key selection criteria include its low R_DS(on) at 4.5 V (7.7 mΩ), industry-standard PQFN pinout, MSL1 rating, and validated performance in 500 kHz+ synchronous buck topologies with <1.2 mm profile constraints.

Technical Context

This MOSFET employs Infineon's StrongIRFET™ trench-gate process to achieve low conduction loss and fast switching with minimal gate charge. Its symmetric die layout and bottom-side thermal pad enable direct PCB heat sinking, supporting continuous 56 A drain current when case temperature is maintained at 25°C.

The device integrates a robust body diode with t_rr = 14 ns and Q_rr = 23 nC, enabling efficient reverse recovery in synchronous rectification. Gate threshold voltage (V_GS(th) = 1.8 V typ.) ensures stable turn-on with 4.5 V logic-level drive, while ±20 V V_GS rating supports robust gate driving in noisy environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input bus applications with margin
R_DS(on) @ V_GS=10 V	5.3 mΩ typ. - Enables <1.1 W conduction loss at 20 A in high-current POL stages
R_DS(on) @ V_GS=4.5 V	7.7 mΩ max. - Ensures reliable on-state operation with standard 5 V or 4.5 V PWM controllers
Q_g	9.3 nC typ. - Reduces gate drive power and enables >1 MHz switching with low driver loss
R_θJC (bottom)	3.6 °C/W max. - Allows direct thermal coupling to inner copper layers for high-power density layouts
I_D @ T_c=25°C	56 A - Supports high-current output rails in server CPU/GPU VRMs without parallel devices
t_rr	14 ns typ. - Minimizes reverse recovery loss and EMI in synchronous rectifier mode

Pinout & Package

PQFN 5 mm × 6 mm, 8-lead, exposed thermal pad (bottom side), RoHS-compliant, MSL1 rated. Package outline "E" per Infineon specification.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (internally connected)	High-current power path tied to PCB thermal pad; requires full-solder coverage for thermal performance
5	Gate	Low-impedance control input; requires <1.8 Ω series gate resistor to damp ringing
6	Source	Reference node for gate drive and current sensing; connects to power ground plane

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	7.7 mΩ max. - Eliminates need for level-shifting gate drivers in 5 V control systems
Bottom-side thermal pad	R_θJC = 3.6 °C/W - Enables >35 W power dissipation with 4-layer board and 2 oz Cu
Industry-standard PQFN pinout	Compatible with IRF, Vishay, ON Semi 5×6 mm footprints - Simplifies multi-source BOM management
MSL1 moisture sensitivity	No bake required before reflow - Reduces manufacturing overhead and avoids thermal stress
Body diode Q_rr	23 nC typ. - Low stored charge minimizes shoot-through risk during dead-time transitions

Applications

Server VRM Power Stage

Telecom POL Converter

Use Scenario: High-current, high-efficiency 3.3 V/5 V output stage in dual-phase CPU VRM for AI accelerators.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating at 600–800 kHz with interleaved gate drive.

Use Value: 5.3 mΩ R_DS(on) reduces conduction loss by 32% vs. legacy 8 mΩ devices, improving full-load efficiency by 0.8%.

Use Scenario: Point-of-load converter supplying FPGA I/O banks in 48 V telecom infrastructure equipment.

IC Role / Device Role / Timing Role: Control MOSFET in primary side of non-isolated buck regulator running at 1 MHz.

Use Value: 9.3 nC Q_g enables clean 1 MHz switching with minimal gate driver loss, reducing thermal footprint by 25%.

GPU Memory Rail

Industrial PLC Power Module

Use Scenario: 1.2 V/60 A memory rail for GDDR6X interfaces requiring tight voltage regulation and low noise.

IC Role / Device Role / Timing Role: Bottom-side synchronous rectifier in multiphase buck with active current balancing.

Use Value: 14 ns t_rr and 23 nC Q_rr suppress voltage spikes during phase current reversal, lowering EMI filter cost by 40%.

Use Scenario: 24 V input to 5 V/3.3 V dual-output power module in DIN-rail mounted industrial controller.

IC Role / Device Role / Timing Role: High-side control switch in primary buck stage with 500 kHz fixed-frequency operation.

Use Value: 30 V V_DS rating provides 2× safety margin over 24 V nominal input, ensuring long-term reliability under surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5020TRPBF	R_DS(on) = 1.95 mΩ @ 10 V, but 40 V V_DS, larger 5×6 mm footprint with different pinout	Better for 24 V input systems; not drop-in due to gate/source pin swap	Select only if higher voltage margin and lower R_DS(on) outweigh redesign effort
SiR872DP-T1-GE3	R_DS(on) = 6.0 mΩ @ 10 V, same 30 V rating, identical PQFN 5×6 package and pinout	Same thermal and layout compatibility; slightly higher Q_g (11.5 nC)	Valid second source with no PCB change; verify gate drive strength for 1 MHz operation

Compared with IRFH5020TRPBF, IRFH8330TRPBF offers tighter V_DS margin for 12 V systems and guaranteed pin compatibility; versus SiR872DP-T1-GE3, it delivers 23% lower gate charge for faster switching with identical layout and thermal interface.

Availability

IRFH8330TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, GPU memory rails, and industrial PLC power modules requiring stable component supply and long-lifecycle support.

Supply support for IRFH8330TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™ family, engineered specifically for high-frequency, high-current DC-DC conversion in datacenter and communications infrastructure where thermal density and switching efficiency are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH8330TRPBF supports 35 A continuous drain current when the bottom-side case temperature is held at 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package and must be validated using measured PCB temperature, not ambient.

Is this MOSFET suitable for 48 V input buck converters?

No - the 30 V V_DS rating provides insufficient margin for 48 V systems, where transient spikes can exceed 60 V. It is rated for ≤12 V nominal input applications such as server VRMs, telecom 48 V-to-12 V intermediate buses, or POL stages downstream of isolated converters.

Does the PQFN 5×6 mm package require special stencil design for assembly?

Yes - Infineon recommends a 0.12 mm thick stencil with 80% area ratio openings for the thermal pad, per AN-1136. Underfill or solder paste volume control is critical to avoid voiding and ensure R_θJC ≤ 3.6 °C/W; insufficient solder coverage increases junction temperature by up to 25°C at full load.

Can IRFH8330TRPBF replace IRF6622 in existing designs?

Only with layout revision - IRF6622 uses a different 5×6 mm PQFN outline ("D") with gate and source pins swapped. While both are 30 V N-channel MOSFETs, the pinout mismatch risks short-circuit during assembly; SiR872DP-T1-GE3 is a true pin-compatible alternative.

IRFH8330TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta), 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH8330TRPBF FAQ

1.How can I place an order for IRFH8330TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8330TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8330TRPBF reliable?

The price and inventory of IRFH8330TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8330TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH8330TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8330TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8330TRPBF?

IRFH8330TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8330TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8330TRPBF?

For technical support, including IRFH8330TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8330TRPBF requirements.

6.How does Aetrix verify that IRFH8330TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH8330TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8330TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH8330TRPBF?

All IRFH8330TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8330TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8330TRPBF part is unused and in its original packaging.

Return procedure for IRFH8330TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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