Infineon Technologies IRFH8334TR2PBF

Overview

IRFH8334TR2PBF from Infineon Technologies is a 30 V, 25 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-frequency synchronous buck converters. It delivers R_DS(on) of 7.2 mΩ (typ.) at V_GS = 10 V and 11.2 mΩ (max.) at V_GS = 4.5 V, with 7.1 nC total gate charge and low 4.1°C/W junction-to-case (bottom) thermal resistance.

For engineers reviewing the IRFH8334TR2PBF datasheet, IRFH8334TR2PBF pinout, IRFH8334TR2PBF application, or IRFH8334TR2PBF equivalent, key selection criteria include its low-profile PQFN thermal performance, body diode recovery characteristics (t_rr = 13–20 ns), and compatibility with 4.5 V logic-level gate drive in compact DC-DC power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve high current density and fast switching with minimized Q_gd/Q_gs ratio (2.3 nC / 3.5 nC typ.), supporting efficient operation in 500 kHz–1 MHz buck topologies. Its integrated source-bonding construction enables 25 A continuous drain current at T_C(Bottom) = 25°C without derating.

The device features a robust body diode with V_SD = 1.0 V (max) at I_S = 20 A and Q_rr = 19–29 nC, enabling reliable synchronous rectification and unclamped inductive switching up to E_AS = 100 mJ at I_AS = 8.2 A.

Key Specifications

Pinout & Package

IRFH8334TR2PBF uses a 8-pin PQFN 5×6 mm Outline "E" package with exposed drain pad on bottom for thermal and electrical connection. Pin 1 is marked by a dot; pins are arranged in two rows (G-D-D-D / S-S-S-G) with source terminals on both sides for low-inductance return paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with NTMFS4C06NT1G and SiR872DP, IRFH8334TR2PBF offers the best balance of low Q_g, moderate R_DS(on), and proven body diode ruggedness for high-dV/dt buck applications - making it optimal for 500 kHz–1 MHz server and telecom power stages where thermal management and switching loss are co-critical.

Availability

IRFH8334TR2PBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery systems, and 5G baseband power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFH8334TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with over 30 years of MOSFET innovation and manufacturing excellence.

The IRFH8334TR2PBF belongs to Infineon's TrenchFET® HEXFET® family, engineered specifically for high-efficiency, high-density DC-DC conversion in datacenter, telecom, and industrial power systems where thermal performance and switching speed are paramount.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C(Bottom) = 100°C, the maximum continuous drain current is 12 A (V_GS = 10 V), as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat transfer efficiency at elevated temperatures, and assumes proper PCB copper area per the recommended layout guidelines.

Does IRFH8334TR2PBF support 3.3 V gate drive?

No - the gate threshold voltage V_GS(th) ranges from 1.35 V to 2.35 V, but R_DS(on) is not characterized below V_GS = 4.5 V. At 3.3 V, the device operates in weak inversion with significantly higher on-resistance (>50 mΩ), leading to excessive conduction loss and thermal runaway risk. Use only with ≥4.5 V logic-level or dedicated gate drivers.

How is the PQFN 5×6 mm package mounted for optimal thermal performance?

Optimal thermal performance requires soldering the exposed drain pad to ≥200 mm² of 2-oz copper on an internal layer, connected via ≥6 thermal vias (0.3 mm diameter, 0.6 mm pitch) to outer ground planes. The side-source terminals must be routed with minimum trace length to reduce parasitic inductance and maintain switching stability.

Is IRFH8334TR2PBF suitable for avalanche-rated applications?

Yes - it is rated for unclamped inductive switching with E_AS = 100 mJ at I_AS = 8.2 A and T_J = 25°C. However, repeated avalanche operation degrades reliability; it is intended for fault protection only, not steady-state operation. Designers must verify single-pulse energy limits using the Fig. 13 curve and actual circuit L·di/dt values.