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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH8334TRPBF

Name: IRFH8334TRPBF
Brand: Infineon Technologies
SKU: IRFH8334TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH8334TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH8334TRPBF.pdf

Description:: MOSFET N-CH 30V 14A/44A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:9,279

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Product details

Overview

IRFH8334TRPBF from Infineon Technologies is a 30 V, 25 A N-channel PQFN 5×6 mm power MOSFET optimized as a high-frequency synchronous buck converter control FET. It delivers R_DS(on) = 7.2 mΩ (typ) at V_GS = 10 V and 9.0 mΩ (max) at V_GS = 10 V, with low gate charge (Q_g = 7.1 nC typ), enabling efficient switching in DC-DC converters for server VRMs and telecom POL modules.

For engineers reviewing the IRFH8334TRPBF datasheet, IRFH8334TRPBF pinout, IRFH8334TRPBF application, or IRFH8334TRPBF equivalent, key selection criteria include its bottom-side thermal resistance (R_θJC(bottom) = 4.1 °C/W max), industry-standard PQFN pinout, and validated performance at 100% duty cycle under source-bonding-limited conduction.

Technical Context

This HEXFET device uses trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_gd = 2.3 nC and t_f = 4.6 ns. Its gate threshold voltage (V_GS(th) = 1.35–2.35 V) supports robust 4.5 V logic-level drive while maintaining noise immunity.

The integrated body diode exhibits t_rr = 13–20 ns and Q_rr = 19–29 nC, enabling reliable synchronous rectification. Thermal design leverages direct bottom-side copper pad contact, with R_θJA = 39 °C/W (JEDEC 2s2p) and linear derating of 0.026 W/°C above 25 °C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V nominal with 25% margin for transient spikes in point-of-load converters.
R_DS(on) max @ V_GS = 10 V	9.0 mΩ - Limits conduction loss to ≤5.76 W at 24 A continuous drain current (T_C = 25 °C).
Q_g typ	7.1 nC - Enables <100 ns total switching time with 1.8 Ω gate resistor, reducing dynamic losses at >1 MHz frequencies.
I_D @ T_C(bottom) = 25 °C	25 A - Rated for sustained operation when PCB heatsinking maintains case (bottom) temperature at 25 °C.
R_θJC(bottom) max	4.1 °C/W - Allows ≥6.1 W power dissipation before junction exceeds 150 °C with 25 °C board temperature.
V_GS(th)	1.35–2.35 V - Ensures turn-on at standard 3.3 V/5 V logic levels while avoiding spurious activation from noise.

Pinout & Package

PQFN 5 mm × 6 mm Outline "E" package with exposed thermal pad on bottom surface; 3-pin configuration (Drain, Source, Gate) arranged in standard industry pinout for multi-vendor compatibility and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path from input supply to channel	Connected to internal die top metallization; electrically tied to exposed copper pad for thermal conduction and EMI shielding.
S (Source)	Reference node for gate drive and current return path	Internally bonded to PCB ground plane via multiple solder connections; defines V_GS reference for accurate gate control.
G (Gate)	Control terminal modulating channel conductivity	High-impedance input requiring low-inductance routing; sensitive to ringing due to C_iss = 1180 pF and C_rss = 110 pF.

Key Features

Feature	Design Value
Low R_θJC(bottom)	4.1 °C/W max enables direct PCB thermal coupling-critical for high-power density VRM designs where airflow is restricted.
Low-profile package	Height <1.2 mm allows integration into space-constrained modules such as 1U server power supplies and PCIe add-in card regulators.
Industry-standard pinout	Matches layout footprints of competing 30 V PQFN MOSFETs, eliminating PCB redesign during second-source qualification.
RoHS-compliant & MSL1	Lead-free, halogen-free construction with moisture sensitivity level 1 ensures long shelf life and reflow compatibility without baking.

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: High-current CPU/GPU core power delivery in dual-socket servers with 40–60 A per phase.

IC Role / Device Role / Timing Role: Control MOSFET in synchronous buck topology operating at 500 kHz–1 MHz with 100% duty cycle capability.

Use Value: 7.2 mΩ R_DS(on) minimizes I²R loss at 25 A, while 4.1 °C/W R_θJC(bottom) sustains junction temperature below 125 °C under full load with 2-layer PCB heatsinking.

Use Scenario: 12 V input to 0.8–3.3 V output conversion in 48 V telecom rectifier systems.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck regulator delivering up to 30 A per rail with tight transient response.

Use Value: Low Q_g (7.1 nC) and fast t_f (4.6 ns) reduce switching loss by ≥18% versus comparable 30 V MOSFETs at 1 MHz, improving efficiency at light loads.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Supplies

Use Scenario: Isolated half-bridge gate driver stage powering 3-phase BLDC motor inverters in PLC-controlled actuators.

IC Role / Device Role / Timing Role: Level-shifting high-side FET in bootstrap-fed gate driver IC interface.

Use Value: V_GS(th) range (1.35–2.35 V) ensures clean turn-on with 3.3 V microcontroller outputs, while 100 °C T_J(max) rating supports extended operation in sealed enclosures.

Use Scenario: Compact 5 V/3.3 V auxiliary supply for radar sensor modules and camera ECUs in ADAS domain controllers.

IC Role / Device Role / Timing Role: Primary switch in compact flyback or buck converter meeting AEC-Q101 stress requirements.

Use Value: PQFN package withstands automotive thermal cycling (-40 to +125 °C), and low C_oss (260 pF) reduces capacitive coupling noise in safety-critical imaging power rails.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 6.7 mΩ @ 10 V; higher Q_g = 10.2 nC; same PQFN 5×6 package	Better conduction loss but slower switching; suited for <500 kHz applications prioritizing efficiency over frequency	Select when thermal budget allows higher gate drive loss and layout lacks gate loop inductance control.
DMTH3006LPS-13	R_DS(on) = 8.2 mΩ @ 10 V; lower Q_gd = 1.7 nC; different pinout (G-D-S vs D-S-G)	Improved dv/dt immunity but requires PCB footprint revision; better for high-noise motor drive environments	Choose only if redesigning layout and needing enhanced shoot-through immunity in half-bridge configurations.

Compared with SiR872DP-T1-GE3 and DMTH3006LPS-13, IRFH8334TRPBF offers the best balance of low Q_g/Q_gd ratio and standardized pinout-making it optimal for high-frequency, drop-in-replacement scenarios in existing buck converter designs without layout changes.

Availability

IRFH8334TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drive gate drivers requiring stable component supply across multi-year production cycles.

Supply support for IRFH8334TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's OptiMOS™ 5 family of low-voltage power MOSFETs, engineered specifically for high-efficiency, high-frequency DC-DC conversion in data center, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRFH8334TRPBF supports 12 A continuous drain current when the bottom-case temperature reaches 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 4.1 °C/W R_θJC(bottom) and 150 °C maximum junction temperature, ensuring safe operation without exceeding SOA boundaries.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 1.35–2.35 V and is fully enhanced at 0 V gate-to-source bias. A negative gate voltage is not required for turn-off; however, applying –5 V improves noise immunity in high-dv/dt environments and reduces Miller-induced false turn-on risk during hard switching.

Can IRFH8334TRPBF be used in avalanche-rated circuits?

Yes-its unclamped inductive switching (UIS) rating is 100 mJ at T_J = 25 °C, verified per JEDEC JESD24-1. Avalanche energy decreases linearly with junction temperature, reaching 40 mJ at 125 °C. Designers must limit peak I_AS to 20 A and ensure single-pulse duration remains ≤100 µs to stay within the SOA curve.

Is the PQFN 5×6 package compatible with standard reflow profiles?

Yes-the IRFH8334TRPBF is qualified to IPC/JEDEC J-STD-020 moisture sensitivity level 1 and supports standard lead-free reflow profiles (peak 260 °C, 20–40 sec above 217 °C). Its MSL1 rating eliminates pre-bake requirements, and the exposed thermal pad ensures uniform heat distribution during soldering.

IRFH8334TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1180 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta), 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH8334TRPBF FAQ

1.How can I place an order for IRFH8334TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8334TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8334TRPBF reliable?

The price and inventory of IRFH8334TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8334TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH8334TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8334TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8334TRPBF?

IRFH8334TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8334TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8334TRPBF?

For technical support, including IRFH8334TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8334TRPBF requirements.

6.How does Aetrix verify that IRFH8334TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH8334TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8334TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH8334TRPBF?

All IRFH8334TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8334TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8334TRPBF part is unused and in its original packaging.

Return procedure for IRFH8334TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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