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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH8337TR2PBF

Name: IRFH8337TR2PBF
Brand: Infineon Technologies
SKU: IRFH8337TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH8337TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH8337TR2PBF.pdf

Description:: MOSFET N-CH 30V 9.7A 5X6 PQFN

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Product details

Overview

IRFH8337TR2PBF from Infineon Technologies is a 30 V, 16.2 A N-channel PQFN 5×6 mm power MOSFET optimized for high-frequency synchronous buck converters. It delivers R_DS(on) = 12.8 mΩ @ V_GS = 10 V and 19.9 mΩ @ V_GS = 4.5 V, with 4.7 nC total gate charge and 4.7 °C/W junction-to-case (bottom) thermal resistance - enabling compact, high-efficiency DC-DC regulation in server VRMs and GPU power stages.

For engineers reviewing the IRFH8337TR2PBF datasheet, IRFH8337TR2PBF pinout, IRFH8337TR2PBF application, or IRFH8337TR2PBF equivalent, key selection criteria include low-profile thermal performance, 4.5 V logic-level drive compatibility, body diode reverse recovery (Q_rr = 17–26 nC), and PQFN package manufacturability for high-density PCB layouts.

Technical Context

This HEXFET device uses trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_g = 4.7 nC and Q_sw = 2.1 nC. Its 1.2 mm profile and bottom-thermal-pad PQFN package enable direct PCB heat spreading without heatsinks.

The MOSFET features a robust body diode with t_rr = 12–18 ns and Q_rr = 17–26 nC at I_F = 16.2 A, supporting efficient synchronous rectification. Gate threshold voltage is tightly specified (1.35–2.35 V) with negative temperature coefficient (−6.0 mV/°C), ensuring stable turn-on across −55°C to +150°C operating range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V input rails with margin for transient spikes in point-of-load converters.
R_DS(on) @ 10 V	12.8 mΩ - Enables ≤1.3 W conduction loss at 16.2 A continuous drain current (T_C(Bottom) = 25°C).
R_DS(on) @ 4.5 V	19.9 mΩ - Ensures reliable turn-on with standard 5 V or 4.5 V PWM controller outputs.
Q_g	4.7 nC - Reduces gate drive power and enables >1 MHz switching in high-frequency buck topologies.
R_θJC(Bottom)	4.7 °C/W - Allows direct thermal coupling to inner copper layers, critical for thermally constrained VRM designs.
t_rr	12–18 ns - Minimizes body diode reverse recovery loss during dead-time transitions in synchronous rectification.
I_D (T_C(Bottom) = 25°C)	16.2 A - Rated for continuous operation under PCB-cooled conditions typical of server CPU/GPU power delivery.

Pinout & Package

PQFN 5×6 mm Outline "E" package with exposed thermal pad on bottom surface; 3-pin configuration (Drain, Source, Gate) arranged for optimal current flow and thermal path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal connected to internal die substrate	Electrically and thermally tied to exposed bottom pad; must be soldered to large copper pour for thermal management.
Source (S)	Reference node for gate drive and current return path	Connected to multiple bond wires and internal source metallization; lowest-inductance return for high di/dt switching.
Gate (G)	Control terminal modulating channel conductivity	High-impedance input requiring <1.6 Ω series resistance to damp ringing; sensitive to ESD (±20 V absolute max).

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	19.9 mΩ - Enables use with 5 V or 4.5 V gate drivers without level-shifting, reducing BOM count.
Bottom-side thermal pad	R_θJC(Bottom) = 4.7 °C/W - Delivers 3× better thermal resistance than top-side cooling, enabling higher power density.
Low gate charge	Q_g = 4.7 nC - Cuts gate driver losses by >40% vs. comparable 30 V MOSFETs with Q_g > 7 nC.
Fast body diode recovery	Q_rr = 17–26 nC - Reduces shoot-through risk and improves efficiency in hard-switched synchronous buck phases.
MSL1 rating	Moisture Sensitivity Level 1 - Eliminates bake requirements before reflow, supporting standard SMT assembly lines.

Applications

Server VRM Phase Legs

GPU Power Delivery

Use Scenario: High-current, high-frequency buck converter supplying core voltage to multi-phase Xeon or EPYC processors.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz with tight duty-cycle control.

Use Value: 12.8 mΩ R_DS(on) and 4.7 nC Q_g reduce conduction and switching losses, improving VRM efficiency by ≥0.8% at 100 A load.

Use Scenario: Compact, low-profile power stage for discrete GPU memory and core rail regulation in gaming and AI accelerators.

IC Role / Device Role / Timing Role: Low-side FET in dual-phase interleaved buck topology with forced-air cooling.

Use Value: 1.2 mm height and bottom thermal pad allow stacking under GPU modules while maintaining T_J < 125°C at 16.2 A.

Telecom DC-DC Modules

Industrial PLC Power Supplies

Use Scenario: 48 V input to 3.3 V/12 V intermediate bus converter in 1RU telecom shelf systems.

IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or LLC resonant secondary-side synchronous rectifier.

Use Value: 30 V V_DS rating and 19.9 mΩ R_DS(on) @ 4.5 V support direct drive from isolated gate drivers, eliminating auxiliary bias supplies.

Use Scenario: Input-stage buck regulator powering FPGA, microcontroller, and I/O rails in DIN-rail mounted PLC controllers.

IC Role / Device Role / Timing Role: Main switching element in 200 kHz fixed-frequency buck converter with wide ambient temperature range.

Use Value: −55°C to +150°C T_J rating and stable V_GS(th) (−6.0 mV/°C) ensure reliable startup and regulation across industrial temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 11.5 mΩ @ 10 V, Q_g = 5.8 nC, same PQFN 5×6 package	Slightly lower R_DS(on) but higher gate charge increases driver loss at >1 MHz	Prefer when conduction loss dominates; avoid if gate drive capability is limited.
Vishay SiR872DP	R_DS(on) = 13.5 mΩ @ 10 V, Q_g = 4.2 nC, 3.3 mm height (vs. 1.2 mm)	Taller profile limits board stacking; identical thermal resistance via bottom pad	Choose only when legacy layout requires taller package; otherwise IRFH8337TR2PBF offers superior height-constrained performance.

Compared with NTMFS4C09NT1G and SiR872DP, IRFH8337TR2PBF uniquely balances ultra-low profile (1.2 mm), industry-leading R_θJC(Bottom) (4.7 °C/W), and sub-5 nC gate charge - making it optimal for space-constrained, high-frequency, thermally aggressive power delivery where both switching speed and thermal headroom are critical.

Availability

IRFH8337TR2PBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, and telecom DC-DC modules requiring stable component supply, high-volume tape-and-reel packaging (400 units per reel), and long-term lifecycle assurance.

Supply support for IRFH8337TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with over 30 years of MOSFET innovation and manufacturing excellence.

This device belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, networking, and industrial power systems where thermal density and switching loss are primary constraints.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH8337TR2PBF supports 16.2 A continuous drain current at T_C(Bottom) = 25°C, derating linearly to 9.7 A at T_C(Bottom) = 100°C per the datasheet's ID vs. T_C curve. This reflects its thermal design limit when mounted on a 2 oz copper PCB with 400 cm² thermal pad area.

Does this MOSFET require a gate resistor for stability?

Yes - a 1.0–2.2 Ω non-inductive gate resistor is recommended between driver output and gate terminal to suppress oscillation caused by gate loop inductance and Miller capacitance (C_rss = 69 pF). Layout must minimize gate trace length and avoid routing near high-dV/dt nodes.

Can IRFH8337TR2PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (normalized R_DS(on) rises with junction temperature) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling to ensure ΔT_J < 5°C between devices for balanced loading.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the integrated body diode has t_rr = 12–18 ns and Q_rr = 17–26 nC at I_F = 16.2 A, verified under di/dt = 390 A/µs. It supports synchronous rectification in buck converters up to 1 MHz, provided dead time is tuned to avoid shoot-through during recovery.

IRFH8337TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 12.8mOhm @ 16.2A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH8337TR2PBF FAQ

1.How can I place an order for IRFH8337TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8337TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8337TR2PBF reliable?

The price and inventory of IRFH8337TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8337TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH8337TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8337TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8337TR2PBF?

IRFH8337TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8337TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8337TR2PBF?

For technical support, including IRFH8337TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8337TR2PBF requirements.

6.How does Aetrix verify that IRFH8337TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH8337TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8337TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH8337TR2PBF?

All IRFH8337TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8337TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8337TR2PBF part is unused and in its original packaging.

Return procedure for IRFH8337TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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