Infineon Technologies IRFH8337TRPBF

Overview

IRFH8337TRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, rated for 30 V V_DS, 16.2 A continuous drain current at T_C(Bottom) = 25°C, and 12.8 mΩ R_DS(on) @ V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or control switch in high-frequency buck converters for server VRMs and telecom power supplies.

For engineers reviewing the IRFH8337TRPBF datasheet, IRFH8337TRPBF pinout, IRFH8337TRPBF application, or IRFH8337TRPBF equivalent, key selection criteria include its low 4.7°C/W junction-to-case (bottom) thermal resistance, 4.7 nC total gate charge, 1.8 V gate threshold voltage, and compatibility with 4.5 V logic-level drive in compact DC-DC point-of-load designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for fast switching and low conduction loss in synchronous buck topologies. Its PQFN 5×6 mm package features exposed bottom thermal pad and source-bonding architecture to sustain 16.2 A continuous current at T_C = 25°C without derating due to bondwire limitations.

The device exhibits 1.4 nC gate-to-drain charge (Q_gd) and 2.1 nC switch charge (Q_sw), enabling sub-10 ns turn-off delay (t_d(off) = 5.7 ns) and 4.1 ns fall time (t_f) under R_G = 1.8 Ω drive. Body diode reverse recovery is characterized by Q_rr = 17–26 nC and t_rr = 12–18 ns at I_F = 16.2 A.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "E" package with exposed thermal pad on bottom surface; 3-terminal configuration (Drain, Source, Gate) with standard industry pinout: Pin 1 = Gate, Pins 2–5 = Source, Pin 6 = Drain (top-side marked).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with SiR872DP-T1-GE3 and DMTH3007LPS-13, IRFH8337TRPBF delivers optimal balance of low R_DS(on), ultra-low Q_g, and superior thermal performance in space-constrained POL designs-making it preferred for 1–2 MHz server and telecom converters where both efficiency and thermal headroom are critical.

Availability

IRFH8337TRPBF is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom DC-DC converters, and industrial motor drive auxiliary supplies requiring stable component supply and consistent PQFN 5×6 mm tape-and-reel logistics.

Supply support for IRFH8337TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's OptiMOS™ 30 V N-channel power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in data center, telecom, and industrial power systems where thermal density and switching speed are primary constraints.

FAQ

What is the maximum continuous drain current for IRFH8337TRPBF at 100°C case temperature?

At T_C(Bottom) = 100°C, the continuous drain current is 9.7 A with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel mobility and increased R_DS(on); actual usable current depends on PCB copper area and airflow, but the 9.7 A rating assumes 1 in² 2-oz copper with 200 LFM airflow.

Does IRFH8337TRPBF support 4.5 V gate drive in practical applications?

Yes - with V_GS = 4.5 V, R_DS(on) is 19.9 mΩ max at T_J = 25°C, enabling functional operation in 5 V or 4.5 V logic-driven buck converters. However, conduction loss increases ~55% versus 10 V drive, so design margins must account for higher T_J rise and potential efficiency drop above 10 A load.

How does the PQFN 5×6 mm package improve thermal performance over SO-8?

The PQFN 5×6 mm package uses a bottom-exposed thermal pad soldered directly to PCB copper, achieving R_θJC(bottom) = 4.7°C/W versus ~15°C/W for SO-8. This reduces junction-to-board thermal resistance by >65%, allowing up to 2.5× higher continuous current in same board area without forced air cooling.

Is IRFH8337TRPBF suitable for avalanche-rated applications?

No - while the device exhibits unclamped inductive switching capability (E_AS = 100 mJ at I_D = 2.6 A), it is not characterized or guaranteed for repetitive avalanche operation. The datasheet specifies single-pulse avalanche energy only; sustained avalanche stress may cause parametric shift or failure and is outside qualified operating conditions.