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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM4226TRPBF

Name: IRFHM4226TRPBF
Brand: Infineon Technologies
SKU: IRFHM4226TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM4226TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TQFN Exposed Pad

Datasheet:: IRFHM4226TRPBF.pdf

Description:: MOSFET N CH 25V 28A PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFHM4226TRPBF from Infineon Technologies (formerly International Rectifier) is a 25 V, N-channel enhancement-mode HEXFET® Power MOSFET in a 3.3 mm × 3.3 mm PQFN package, featuring R_DS(on) = 1.7 mΩ (typ.) at V_GS = 10 V, Q_g = 16 nC (typ.), and 60 A continuous drain current at T_C = 25°C. It serves as a high-efficiency synchronous rectifier or control switch in high-frequency DC-DC buck converters.

For engineers reviewing the IRFHM4226TRPBF datasheet, IRFHM4226TRPBF pinout, IRFHM4226TRPBF application, or IRFHM4226TRPBF equivalent, key selection criteria include low conduction loss (R_DS(on) ≤ 2.4 mΩ @ 10 V), fast switching (t_r = 35 ns, t_f = 8.1 ns), thermal resistance to PCB < 3.2 °C/W, industry-standard pinout compatibility, and MSL1 reliability rating.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-current, low-voltage synchronous buck stages. Its low gate charge (16 nC typ. at V_GS = 10 V, V_DS = 13 V) and low output capacitance (C_oss = 570 pF at V_DS = 13 V) enable efficient operation above 500 kHz switching frequencies.

The device integrates a robust body diode with t_rr = 16–24 ns and Q_rr = 28–42 nC under defined conditions, supporting zero-voltage switching (ZVS) transitions in resonant topologies. Junction-to-case thermal resistance of 3.2 °C/W (bottom side) enables direct PCB copper thermal spreading without heatsinks in compact power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage compatible with 12 V and 24 V input bus systems.
R_DS(on) max @ V_GS = 10 V	2.4 mΩ - Enables ≤ 5.4 W conduction loss at 60 A, critical for high-current POL converters.
Q_g typical	16 nC - Reduces gate drive power and allows use with low-power controllers like IR35201 or MP2960.
I_D @ T_C = 25°C	60 A - Sustains full-load current in 40–60 A VRM/VRD applications without derating.
R_θJC (Bottom)	3.2 °C/W - Permits >30 W dissipation with ≤100°C junction rise over 2 oz copper pad, enabling ultra-thin designs.
V_GS(th)	1.1–2.1 V - Ensures reliable turn-on with 3.3 V logic-level gate drivers (e.g., ISL6612A).
C_iss	2000 pF - Low input capacitance minimizes Miller effect and improves noise immunity in high-dV/dt environments.

Pinout & Package

IRFHM4226TRPBF uses a 8-pin PQFN (3.3 mm × 3.3 mm, 0.9 mm height) with exposed drain paddle. Pin 1 is marked by a dot; pins are arranged in two rows (4 per side). The package supports bottom-side thermal transfer via soldered paddle and standard reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (periphery)	Source (S)	All eight perimeter pins are internally connected to source - enables low-inductance, multi-point source bonding for reduced EMI and improved current sharing.
Drain (D)	Exposed bottom paddle	Primary thermal and current path - must be soldered to large PCB copper area for R_θJC = 3.2 °C/W performance.
Gate (G)	Pin 1 (marked)	Single dedicated gate terminal - isolated from source pins; requires controlled impedance routing to minimize ringing.

Key Features

Feature	Design Value
Low R_DS(on)	1.7 mΩ typ. @ 10 V - cuts I²R losses by >30% vs. comparable 3×3 mm MOSFETs, directly improving 12 V → 1 V conversion efficiency.
Low Q_g	16 nC typ. - reduces gate driver power consumption and enables faster edge rates without overshoot, supporting >1 MHz operation.
Low-profile PQFN	0.9 mm max height - fits within 1.0 mm board stack-ups required for server DIMMs and PCIe add-in cards.
MSL1 rating	Unlimited floor life at ≤30°C/60% RH - eliminates bake requirements and simplifies SMT line logistics for high-volume manufacturing.
RoHS & halogen-free	Compliant per JEDEC J-STD-020 - meets IPC-1752A reporting requirements for automotive and industrial OEMs.

Applications

Server VRM Output Stage

GPU Core Power Delivery

Use Scenario: High-current, high-density 12 V → 0.8 V buck converter supplying CPU/GPU cores in datacenter servers.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating in continuous conduction mode (CCM) at 500–800 kHz.

Use Value: 1.7 mΩ R_DS(on) and 3.2 °C/W R_θJC enable 60 A output with <15°C junction rise on 4-layer boards, eliminating need for external heatsinks.

Use Scenario: Multi-phase VRM powering discrete graphics processing units with dynamic load steps up to 300 A/µs.

IC Role / Device Role / Timing Role: Control MOSFET in high-side position, driven by phase-shifted PWM signals from digital multiphase controller.

Use Value: 16 nC Q_g and 35 ns rise time allow precise dead-time control and minimize shoot-through risk during rapid load transients.

Industrial PLC Power Module

Telecom Base Station DC-DC Converter

Use Scenario: Compact 24 V input, 5 V/15 A isolated DC-DC module for programmable logic controller I/O backplanes.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or half-bridge topology.

Use Value: 25 V V_DSS margin accommodates 24 V ±20% input surges; 124 mJ E_AS withstands unclamped inductive energy during fault events.

Use Scenario: Point-of-load regulator converting -48 V telecom supply to +3.3 V for FPGA and ASIC subsystems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in non-isolated buck stage with integrated controller.

Use Value: Industry-standard pinout ensures drop-in replacement across multiple vendors; MSL1 rating supports long-term inventory storage in global distribution centers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(on) = 1.4 mΩ @ 10 V; larger 5×6 mm SO-8 package; higher Q_g = 22 nC	Better conduction loss but 2.5× larger footprint and slower switching - suited for lower-frequency, higher-power designs where space is not constrained.	Select when thermal budget allows larger package and priority is minimizing steady-state loss over switching loss.
Vishay SiR872DP	R_DS(on) = 2.0 mΩ @ 10 V; same 3.3×3.3 mm PQFN; Q_g = 19 nC; V_DSS = 30 V	Higher voltage rating adds margin for 24 V systems with transient spikes; slightly higher gate charge increases driver stress at >1 MHz.	Prefer for 24 V input applications requiring >25 V blocking margin while retaining identical board layout and thermal interface.

Compared with BSC014N04LS6 and SiR872DP, IRFHM4226TRPBF delivers optimal balance of ultra-low R_DS(on), minimal Q_g, and compact 3.3 mm footprint - making it the preferred choice for space-constrained, high-frequency POL converters where both conduction and switching losses must be minimized simultaneously.

Availability

IRFHM4226TRPBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, industrial PLC power modules, and telecom base station DC-DC converters requiring stable component supply, MSL1 handling, and RoHS-compliant sourcing.

Supply support for IRFHM4226TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

IRFHM4226TRPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFHM4226TRPBF supports 67 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating based on R_θJC = 3.2 °C/W and 150°C maximum junction temperature, and assumes full solder coverage of the exposed drain paddle.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 1–5 Ω) is recommended between driver output and pin 1 to dampen parasitic oscillation caused by trace inductance and C_iss. The device's low Q_g and fast switching make it susceptible to ringing without proper gate control; layout guidelines in AN-1136 confirm this requirement for PQFN packages.

Can IRFHM4226TRPBF be used in avalanche mode?

Yes - it is rated for single-pulse avalanche energy up to 124 mJ at T_J = 25°C. Avalanche capability is validated per JEDEC JESD24-11, with test circuit shown in Figure 16a of the datasheet. Operation beyond single-pulse or at elevated temperatures requires derating per Figure 13.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the integrated body diode has t_rr = 16–24 ns and Q_rr = 28–42 nC at I_F = 30 A, V_DD = 13 V, and di/dt = 450 A/µs. These values are optimized for synchronous buck operation, enabling efficient zero-voltage switching when paired with appropriate gate timing control.

IRFHM4226TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-TQFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: -

IRFHM4226TRPBF FAQ

1.How can I place an order for IRFHM4226TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM4226TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM4226TRPBF reliable?

The price and inventory of IRFHM4226TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM4226TRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM4226TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM4226TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM4226TRPBF?

IRFHM4226TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM4226TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM4226TRPBF?

For technical support, including IRFHM4226TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM4226TRPBF requirements.

6.How does Aetrix verify that IRFHM4226TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM4226TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM4226TRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM4226TRPBF?

All IRFHM4226TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM4226TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM4226TRPBF part is unused and in its original packaging.

Return procedure for IRFHM4226TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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