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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM4231TRPBF

Name: IRFHM4231TRPBF
Brand: Infineon Technologies
SKU: IRFHM4231TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM4231TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFHM4231TRPBF.pdf

Description:: MOSFET N-CH 25V 40A 8PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFHM4231TRPBF from Infineon Technologies is a 25 V, 40 A (T_C = 25°C), PQFN 3.3 mm × 3.3 mm N-channel enhancement-mode Power MOSFET optimized for high-efficiency synchronous buck converter topologies in server VRMs and POL converters. It features R_DS(on) = 2.7 mΩ (typ) at V_GS = 10 V, Q_g = 9.7 nC (typ), and R_θJC(Bottom) = 4.3 °C/W - enabling low conduction loss, fast switching, and direct PCB thermal coupling.

For engineers reviewing the IRFHM4231TRPBF datasheet, IRFHM4231TRPBF pinout, IRFHM4231TRPBF application, or IRFHM4231TRPBF equivalent, key selection criteria include its 2.7 mΩ on-resistance at 10 V gate drive, industry-standard PQFN pinout compatibility, MSL1 industrial qualification, and body diode recovery performance (t_rr = 16–24 ns) in high-frequency DC-DC stages.

Technical Context

This FastIRFET™ device uses trench-gate HEXFET® technology with source-bonding to achieve ultra-low R_DS(on) and minimized package inductance. Its 3.3 mm × 3.3 mm PQFN footprint integrates exposed drain pad for bottom-side thermal transfer and supports ≤0.9 mm profile designs.

The MOSFET exhibits V_GS(th) = 1.1–2.1 V, g_fs = 120 S (typ), and C_iss = 1270 pF (V_GS = 0 V), making it suitable for 4.5 V–10 V gate drive systems where low Q_g/Q_gd ratio (9.7 nC / 3.6 nC) ensures clean turn-on/turn-off with minimal Miller-induced oscillation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage compatible with 12 V input bus and 5 V/3.3 V output rails in point-of-load converters.
R_DS(on) (V_GS = 10 V)	2.7 mΩ (typ), 3.4 mΩ (max) - Enables <1 W conduction loss at 30 A continuous current in compact VRM phases.
Q_g	9.7 nC (typ) - Supports efficient 500 kHz–1 MHz switching with reduced gate driver power demand and lower EMI.
I_D @ T_C = 25°C	40 A - Rated continuous drain current under PCB-mounted thermal conditions using bottom-side copper pour.
R_θJC(Bottom)	4.3 °C/W - Allows direct junction-to-PCB thermal path, critical for maintaining T_J < 125°C in high-power density modules.
t_rr / Q_rr	16–24 ns / 13–20 nC - Fast body diode recovery minimizes shoot-through risk and reverse recovery loss in synchronous rectification.

Pinout & Package

Package: PQFN 3.3 mm × 3.3 mm, 8-pin, exposed drain pad (pin 1 = gate, pins 2–4 = source, pins 5–7 = source, pin 8 = drain). Compliant with JEDEC MO-220, MSL1, and RoHS/halogen-free requirements.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts 3.3 V–10 V logic-level drive; low input capacitance enables fast edge rates.
Pins 2–4, 5–7	Source	Common source connection; multiple parallel terminals reduce source inductance and improve current sharing in high-di/dt operation.
Pin 8 + Exposed Pad	Drain	Main power output node; exposed copper pad provides primary thermal path to PCB ground plane and structural mechanical anchoring.

Key Features

Feature	Design Value
Low R_DS(on)	2.7 mΩ typ at V_GS = 10 V reduces I²R losses by >30% vs. legacy 5 mΩ MOSFETs in 30 A POL stages.
Low-profile PQFN	0.9 mm max height enables integration into space-constrained 2U server power supplies and embedded computing modules.
Industry-standard pinout	Compatible with alternate 3.3×3.3 mm PQFN MOSFETs (e.g., SiR872DP, CSD18540Q5B), simplifying second-source qualification.
MSL1 industrial qualification	Guarantees robust reflow survivability and long-term reliability in automated SMT lines without moisture sensitivity concerns.

Applications

Server Voltage Regulator Modules

High-Density POL Converters

Use Scenario: Primary high-side switch in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V) at up to 100 A per rail.

IC Role / Device Role / Timing Role: Main power switch handling high di/dt transitions; synchronized with low-side FET via PWM controller with dead-time control.

Use Value: 2.7 mΩ R_DS(on) and 4.3 °C/W R_θJC enable >95% efficiency at 50 A load while limiting junction temperature rise to <40°C above PCB ambient.

Use Scenario: Output stage switch in isolated or non-isolated 5 V/3.3 V POL modules for FPGA, ASIC, and memory subsystems.

IC Role / Device Role / Timing Role: High-frequency (1–2 MHz) synchronous rectifier with integrated body diode used during light-load discontinuous conduction mode.

Use Value: 16–24 ns t_rr and 13–20 nC Q_rr minimize reverse recovery loss and associated ringing, improving light-load efficiency by ~2.5% over standard MOSFETs.

Telecom Base Station Power

Industrial Motor Drive Gate Drivers

Use Scenario: Intermediate bus converter (12 V → 3.3 V/5 V) powering RF transceiver ICs and digital signal processors in 4G/5G macrocells.

IC Role / Device Role / Timing Role: High-efficiency, thermally robust power switch operating continuously at 60–85°C ambient with forced airflow.

Use Value: MSL1 rating and -55°C to +150°C T_J range ensure stable operation across extended industrial temperature profiles without derating.

Use Scenario: Half-bridge high-side switch in compact BLDC motor gate driver modules for HVAC blowers and servo amplifiers.

IC Role / Device Role / Timing Role: Fast-switching, low-loss power stage element driven by isolated gate driver with bootstrap supply.

Use Value: Low Q_g/Q_gd ratio (9.7 nC / 3.6 nC) suppresses Miller plateau effects, enabling reliable 100 ns dead-time control and reducing cross-conduction risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Toshiba TK85S06N1L	R_DS(on) = 3.6 mΩ (max) at V_GS = 10 V; Q_g = 11.5 nC; PQFN 3.3×3.3 mm, same pinout.	Slightly higher conduction loss; requires marginally larger gate driver capability.	Preferred when sourcing diversity is required and 0.9 mΩ R_DS(on) margin is acceptable for thermal budget.
Texas Instruments CSD18540Q5B	R_DS(on) = 2.9 mΩ (max); Q_g = 10.2 nC; identical package and pinout; enhanced avalanche rating (EAS = 55 mJ).	Better single-pulse avalanche immunity; otherwise functionally interchangeable in buck topologies.	Select when system-level unclamped inductive switching stress exceeds 42 mJ or requires extended safe operating area margin.

Compared with TK85S06N1L and CSD18540Q5B, IRFHM4231TRPBF delivers the lowest typical R_DS(on) (2.7 mΩ) and gate charge (9.7 nC), offering superior conduction efficiency and switching speed in thermally constrained, high-current POL applications.

Availability

IRFHM4231TRPBF is available at Aetrix Electronics and suitable for server VRMs, high-density POL converters, and telecom base station power supplies requiring stable component supply, MSL1 reflow compatibility, and consistent PQFN 3.3 mm × 3.3 mm sourcing.

Supply support for IRFHM4231TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's FastIRFET™ family - engineered specifically for high-frequency, high-current DC-DC conversion in data center, networking, and industrial power systems where thermal density and switching efficiency are critical.

FAQ

What is the maximum continuous drain current rating for IRFHM4231TRPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 46 A (V_GS = 10 V), as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating based on R_θJC = 4.3 °C/W and junction temperature limit of 150°C, ensuring safe operation under sustained high-temperature PCB mounting conditions.

Does IRFHM4231TRPBF support 3.3 V gate drive in logic-level applications?

Yes - V_GS(th) is 1.1–2.1 V, and R_DS(on) is specified at 4.5 V (max 4.6 mΩ). At 3.3 V gate drive, typical R_DS(on) rises to ~6.2 mΩ (extrapolated from Fig 12), supporting moderate-current logic-level use but not full 40 A conduction; design margining is recommended for such operation.

How does the body diode performance compare to discrete Schottky alternatives in synchronous rectification?

The integrated body diode has V_SD = 1.0 V (at I_S = 30 A, T_J = 25°C) and t_rr = 16–24 ns, outperforming most discrete 45 V Schottkys in recovery speed but with higher forward drop. It eliminates external component count and layout complexity, making it optimal for compact synchronous buck designs where layout parasitics dominate efficiency trade-offs.

Is the PQFN 3.3 mm × 3.3 mm package compatible with standard stencil thickness and reflow profiles?

Yes - the package is MSL1 rated and qualified for standard lead-free reflow (peak 260°C, 20 sec max). Recommended stencil aperture is 0.12 mm thick with 1:1 area ratio for the exposed drain pad; IPC-7525-compliant foil design ensures uniform solder paste release and void-free thermal pad wetting per AN-1136 guidelines.

IRFHM4231TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1270 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta), 29W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (3x3)

IRFHM4231TRPBF FAQ

1.How can I place an order for IRFHM4231TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM4231TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM4231TRPBF reliable?

The price and inventory of IRFHM4231TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM4231TRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM4231TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM4231TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM4231TRPBF?

IRFHM4231TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM4231TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM4231TRPBF?

For technical support, including IRFHM4231TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM4231TRPBF requirements.

6.How does Aetrix verify that IRFHM4231TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM4231TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM4231TRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM4231TRPBF?

All IRFHM4231TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM4231TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM4231TRPBF part is unused and in its original packaging.

Return procedure for IRFHM4231TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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