Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM7194TRPBF

Name: IRFHM7194TRPBF
Brand: Infineon Technologies
SKU: IRFHM7194TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFHM7194TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFHM7194TRPBF.pdf

Description:: MOSFET N-CH 100V 9.3A/34A 8PQFN

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,727

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFHM7194TRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 34 A N-channel enhancement-mode HEXFET® Power MOSFET in a PQFN 3.3 mm × 3.3 mm package with exposed drain pad. It delivers R_DS(on) = 13.7 mΩ (typ) at V_GS = 10 V, Q_g = 13 nC (typ), and R_θJC(Bottom) = 3.4 °C/W - optimized for high-frequency DC-DC conversion in telecom power supplies.

For engineers reviewing the IRFHM7194TRPBF datasheet, IRFHM7194TRPBF pinout, IRFHM7194TRPBF application, or IRFHM7194TRPBF equivalent, key selection criteria include low conduction loss (≤16.4 mΩ max), fast switching (t_r = 3.3 ns, t_f = 2.5 ns), industry-standard pinout compatibility, MSL1 rating, and thermal performance via bottom-side PCB heat transfer.

Technical Context

This device operates as a primary-side switch or synchronous rectifier in isolated 48 V/60 V telecom DC-DC converters. Its 100 V V_DSS, 34 A I_D @ T_C = 25°C, and 220 mJ single-pulse avalanche energy support robust operation under transient overvoltage and inductive switching stress.

The PQFN 3.3 × 3.3 mm package integrates an exposed drain pad for direct thermal coupling to the PCB, enabling junction-to-case thermal resistance of just 3.4 °C/W (bottom path). Gate charge profile (Q_gd = 4.3 nC, Q_sw = 5.2 nC) supports efficient high-frequency PWM control with minimal driver loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 80 V DC bus in 48 V telecom systems with margin for transients.
R_DS(on) max @ V_GS = 10 V	16.4 mΩ - Limits conduction loss to ≤11.3 W at 34 A, critical for >95% efficiency targets.
Q_g typical	13 nC - Enables <100 ns total switching time with standard 1 A gate drivers at 500 kHz.
R_θJC(Bottom)	3.4 °C/W - Allows ≥37 W continuous power dissipation with 4-layer PCB copper pour under 25°C case temp.
I_D @ T_C = 25°C	34 A - Supports high-current primary-side switching in 300–600 W telecom brick designs.
V_GS(th)	2.0–3.6 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drive without level shifting.
C_iss	733 pF - Low input capacitance reduces Miller effect and improves EMI behavior in hard-switched topologies.

Pinout & Package

PQFN 3.3 mm × 3.3 mm package with 8-pin layout (3×3 array, center pad exposed drain), 0.9 mm profile, MSL1 rating, and RoHS/halogen-free compliance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (periphery)	Source (S)	All eight perimeter pins are internally shorted to source - enables low-inductance, multi-point PCB grounding.
Center Pad	Drain (D)	Exposed copper pad electrically and thermally connected to drain - must be soldered to large PCB copper area for thermal management.
Gate (G)	Control Input	Single dedicated gate terminal (Pin 1 identifier per outline "B") - requires <2.1 Ω series gate resistor for optimal ringing suppression.

Key Features

Feature	Design Value
Low R_DS(on) (<16.4 mΩ)	Reduces I²R conduction loss by ≥35% vs. comparable 100 V MOSFETs, directly improving full-load efficiency.
Low Q_g (13 nC typ)	Lowers gate drive power requirement and enables higher PWM frequency without excessive driver heating.
R_θJC(Bottom) = 3.4 °C/W	Permits >10 W higher continuous power handling than standard SO-8 packages at same PCB area.
Industry-standard pinout	Enables drop-in replacement across multiple vendors' PQFN 3.3 × 3.3 power MOSFETs without layout change.
MSL1 / Industrial qualification	Eliminates bake requirements and supports high-reliability manufacturing in telecom infrastructure applications.

Applications

Telecom DC-DC Primary Switch

Synchronous Rectifier

Use Scenario: High-frequency (300–1000 kHz) isolated forward or half-bridge converter in 48 V telecom power supply bricks.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer primary winding.

Use Value: 13.7 mΩ R_DS(on) and 13 nC Q_g jointly enable >96% peak efficiency at 500 kHz while maintaining thermal headroom on 2-oz copper.

Use Scenario: Secondary-side synchronous rectification in LLC resonant or phase-shifted full-bridge converters.

IC Role / Device Role / Timing Role: Low-V_F body diode (0.8–1.3 V) and fast reverse recovery (t_rr = 30 ns) enable zero-voltage switching assist.

Use Value: 34 A continuous current rating and 220 mJ avalanche capability tolerate output short-circuit and load dump events without failure.

Industrial Motor Drive Half-Bridge

Server VRM High-Side Switch

Use Scenario: 24–48 V BLDC motor gate drive stage in industrial automation controllers.

IC Role / Device Role / Timing Role: High-side switch in three-phase half-bridge inverters, driven by bootstrap gate driver.

Use Value: 100 V rating provides 2× bus voltage margin; 3.4 °C/W R_θJC allows sustained 20 A RMS current with passive heatsinking.

Use Scenario: High-side switch in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V).

IC Role / Device Role / Timing Role: Fast-switching, low-R_DS(on) power stage operating at 500–1000 kHz with tight duty cycle control.

Use Value: 16.4 mΩ max R_DS(on) minimizes conduction loss during high-duty-cycle operation; low Q_gd (4.3 nC) suppresses shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRFH7194TRPBF	Same die, identical R_DS(on), Q_g, and thermal specs; rebranded part post-IR acquisition.	No functional difference; fully interchangeable in design and procurement.	Select when sourcing from newer Infineon catalog channels or requiring updated documentation.
Vishay SiR872DP-T1-GE3	100 V, 32 A, R_DS(on) = 15.5 mΩ (max), Q_g = 14.5 nC - slightly higher losses and slower switching.	Compatible footprint but requires gate drive strength verification due to higher Q_g.	Use where second-source assurance is required and 0.5–1% efficiency penalty is acceptable.

Compared with IRFH7194TRPBF, no electrical or thermal distinction exists; versus SiR872DP-T1-GE3, IRFHM7194TRPBF offers 0.9 mΩ lower R_DS(on) and 1.5 nC less Q_g, yielding measurable improvement in conduction and switching loss at 500 kHz+ operation.

Availability

IRFHM7194TRPBF is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor drives, and server VRMs requiring stable component supply, MSL1 reliability, and high-power-density packaging.

Supply support for IRFHM7194TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with headquarters in Munich, Germany.

This device belongs to Infineon's TrenchStop™ and HEXFET® power MOSFET portfolio, engineered specifically for high-efficiency, high-frequency switching in telecom, server, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IRFHM7194TRPBF at 100°C case temperature?

The maximum continuous drain current is 21 A when the bottom-case temperature (T_C(Bottom)) is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This reflects derating from the 34 A rating at 25°C due to thermal limits, with a linear derating factor of 0.022 W/°C applied to power dissipation.

Does IRFHM7194TRPBF require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to dampen ringing and control dV/dt. Based on measured R_g = 2.1 Ω and typical gate charge, a 5–10 Ω resistor is recommended for 500 kHz operation with 1 A peak gate drivers; lower values (≤5 Ω) may be used with stronger drivers to minimize switching time.

Can IRFHM7194TRPBF be used in avalanche mode, and what is its rated single-pulse energy?

Yes - it is rated for unclamped inductive switching with a single-pulse avalanche energy (E_AS) of 220 mJ at T_J = 25°C. This capability is validated per JEDEC JESD24-11 and supports robustness in flyback and resonant converter topologies where voltage spikes exceed V_DSS.

How should the exposed drain pad be connected on the PCB for optimal thermal performance?

The center exposed drain pad must be soldered to a minimum 100 mm² copper area on the PCB's inner or bottom layer, using ≥4 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) connecting to internal ground or power planes. Per AN-1136, stencil aperture should be 80% open to prevent solder voiding and ensure mechanical integrity.

IRFHM7194TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FASTIRFET™, HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.3A (Ta), 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 733 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 37W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (3.3x3.3), Power33

IRFHM7194TRPBF FAQ

1.How can I place an order for IRFHM7194TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM7194TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM7194TRPBF reliable?

The price and inventory of IRFHM7194TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM7194TRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM7194TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM7194TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM7194TRPBF?

IRFHM7194TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM7194TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM7194TRPBF?

For technical support, including IRFHM7194TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM7194TRPBF requirements.

6.How does Aetrix verify that IRFHM7194TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM7194TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM7194TRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM7194TRPBF?

All IRFHM7194TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM7194TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM7194TRPBF part is unused and in its original packaging.

Return procedure for IRFHM7194TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…