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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM8228TRPBF

Name: IRFHM8228TRPBF
Brand: Infineon Technologies
SKU: IRFHM8228TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM8228TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFHM8228TRPBF.pdf

Description:: MOSFET N-CH 25V 19A 8PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFHM8228TRPBF from Infineon Technologies is a 25 V, 25 A (T_C = 25°C), N-channel PQFN-packaged Power MOSFET optimized as a synchronous rectifier in high-frequency buck converters. It delivers R_DS(on) = 4.2 mΩ (typ) at V_GS = 10 V and 6.7 mΩ (typ) at V_GS = 4.5 V, with Q_g = 9.0 nC (typ), low-profile 1.05 mm height, and MSL1 rating for consumer-grade reliability.

For engineers reviewing the IRFHM8228TRPBF datasheet, IRFHM8228TRPBF pinout, IRFHM8228TRPBF application, or IRFHM8228TRPBF equivalent, key selection criteria include its 3.7°C/W junction-to-PCB thermal resistance, industry-standard 8-pin PQFN layout, body diode recovery performance (t_rr = 14 ns typ), and compatibility with 400 kHz synchronous buck topologies requiring low conduction + switching loss trade-offs.

Technical Context

This device is a trench-based N-channel enhancement-mode MOSFET designed for high-efficiency DC-DC conversion where low R_DS(on) and fast switching are critical. Its 8-pin PQFN package features five parallel drain terminals and dual source terminals to minimize package inductance and improve current sharing under high di/dt conditions.

The gate threshold voltage (V_GS(th) = 1.35–2.35 V) enables robust 4.5 V logic-level drive, while its 195 pF Crss and 4.1 nC Q_sw support clean turn-off in synchronous rectifier operation. The integrated body diode exhibits V_SD = 1.0 V (max) at I_S = 20 A and Q_rr = 10–15 nC, minimizing reverse recovery losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage compatible with 12 V input bus systems and 5/3.3 V output rails.
R_DS(on) @ V_GS = 10 V	4.2 mΩ (typ) - Enables ≤0.5 W conduction loss at 20 A continuous drain current with minimal heatsinking.
R_DS(on) @ V_GS = 4.5 V	6.7 mΩ (typ) - Supports direct drive from standard 5 V PWM controllers without level-shifting.
Q_g	9.0 nC (typ) - Reduces gate drive power and allows use of low-current gate drivers in compact designs.
t_r/t_f	22 ns / 6.2 ns - Fast switching minimizes overlap loss in synchronous buck operation at 400 kHz.
R_θJC (Bottom)	3.7°C/W - Enables direct thermal coupling to PCB copper, supporting >30 W power dissipation with 2 oz Cu thermal pad.
I_D @ T_C = 25°C	25 A - Rated for sustained current delivery when mounted on thermally enhanced PCBs per AN-1136 footprint.

Pinout & Package

IRFHM8228TRPBF uses an 8-pin PQFN package (3.3 mm × 3.3 mm, 1.05 mm height) with exposed drain paddle for low thermal resistance. Pin numbering follows Outline "C" per Infineon package drawing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 8	Drain (D)	Five parallel drain terminals reduce package inductance and distribute high pulsed current (I_DM = 260 A).
5, 6	Source (S)	Dual source pins lower source loop inductance, improving stability during fast dI/dt transitions.
7	Gate (G)	Single gate input with 1.7 Ω internal gate resistance; optimized for 4.5–10 V drive with minimal ringing.

Key Features

Feature	Design Value
Low thermal resistance to PCB	R_θJC(Bottom) = 3.7°C/W - Enables passive cooling in space-constrained DC-DC modules.
Low profile package	Height ≤ 1.05 mm - Allows integration into ultra-thin power supplies and mobile computing VRMs.
Industry-standard pinout	8-pin PQFN "C" outline - Ensures drop-in compatibility with alternative 25 V MOSFETs from multiple vendors.
MSL1 qualification	Moisture Sensitivity Level 1 - Eliminates bake requirements prior to reflow, reducing manufacturing cost and risk.
Halogen-free & RoHS compliant	Meets IPC-1752A Class 2 material declarations - Supports environmental compliance for consumer electronics.

Applications

Server VRM

USB-C PD Adapter

Use Scenario: High-density 48 V–to–12 V intermediate bus converter feeding point-of-load regulators in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage operating at 400 kHz with 20–30 A output current.

Use Value: 4.2 mΩ R_DS(on) reduces conduction loss by ≥15% vs. legacy 6.5 mΩ devices, enabling higher efficiency at full load without forced air.

Use Scenario: Compact 65 W USB-C Power Delivery adapter with GaN primary-side switching and silicon secondary-side regulation.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 100–300 kHz buck-derived output stage delivering 20 V @ 3.25 A.

Use Value: 9.0 nC Q_g and 6.2 ns t_f minimize gate drive loss and switching tail energy, improving light-load efficiency over discrete diode solutions.

Laptop CPU Core VR

Industrial PLC I/O Module

Use Scenario: Multi-phase core voltage regulator supplying up to 120 A to modern x86 CPUs in ultrabooks.

IC Role / Device Role / Timing Role: Phase-leg low-side switch in 500 kHz multiphase buck converter with interleaved gate drive.

Use Value: Dual-source pin layout and 3.7°C/W R_θJC allow tight thermal coupling to internal PCB layers, sustaining 25 A continuous per phase without thermal throttling.

Use Scenario: Isolated 24 V DC–to–5 V/3.3 V auxiliary supply powering digital I/O and communication interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in flyback-derived forward converter with 200 kHz switching frequency.

Use Value: MSL1 rating and -55°C to +150°C TJ range ensure long-term reliability in unventilated industrial enclosures with ambient temperatures up to 70°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 11.5 nC; same 3.3×3.3 mm PQFN but thicker (1.2 mm)	Higher gate charge increases driver loss; slightly worse thermal resistance (4.1°C/W)	Prefer when lowest R_DS(on) is priority and board height allows 0.15 mm extra thickness.
DMTH2006LPS-13	R_DS(on) = 5.5 mΩ @ 10 V; Q_g = 7.2 nC; 2.5×3.0 mm package with 3.5°C/W R_θJC	Smaller footprint but lower current rating (20 A); faster switching due to lower Q_g	Prefer when PCB area is constrained and peak current remains ≤20 A with margin.

Compared with SiR872DP-T1-GE3 and DMTH2006LPS-13, IRFHM8228TRPBF offers the best balance of low R_DS(on), low Q_g, and ultra-low profile-making it optimal for thermally dense, height-sensitive synchronous buck designs where both conduction and switching losses must be minimized simultaneously.

Availability

IRFHM8228TRPBF is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, laptop CPU core VRs, and industrial PLC I/O modules requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for IRFHM8228TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IRFHM8228TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing, consumer, and industrial power supplies where thermal density and switching speed are critical.

FAQ

What is the maximum continuous drain current for IRFHM8228TRPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 41 A when V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB thermal design per Infineon AN-1136, including ≥100 mm² of 2 oz copper connected to the exposed drain paddle.

Does IRFHM8228TRPBF support 3.3 V gate drive in practice?

No-its gate threshold voltage (V_GS(th)) ranges from 1.35 V to 2.35 V, but R_DS(on) rises sharply below 4.5 V. At V_GS = 3.3 V, R_DS(on) exceeds 15 mΩ (estimated from Fig 12), making it unsuitable for efficient operation. Minimum recommended gate drive is 4.5 V.

Can IRFHM8228TRPBF be used in avalanche mode?

Yes-it is rated for single-pulse avalanche energy (E_AS) up to 50 mJ at T_J = 25°C. However, repetitive avalanche is not guaranteed. Layout must minimize stray inductance (per Fig 19), and pulse width must stay within the safe operating area defined in Fig 14 for reliable operation.

What is the recommended PCB footprint and stencil specification?

Infineon specifies a 3.3 mm × 3.3 mm land pattern with 0.35 mm solder mask opening and 0.15 mm stencil aperture for the exposed drain paddle, per Application Note AN-1136. Thermal vias (≥8 × 0.3 mm) under the paddle are required to achieve the 3.7°C/W R_θJC rating.

IRFHM8228TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1667 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (3.3x3.3), Power33

IRFHM8228TRPBF FAQ

1.How can I place an order for IRFHM8228TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM8228TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM8228TRPBF reliable?

The price and inventory of IRFHM8228TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM8228TRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM8228TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM8228TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM8228TRPBF?

IRFHM8228TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM8228TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM8228TRPBF?

For technical support, including IRFHM8228TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM8228TRPBF requirements.

6.How does Aetrix verify that IRFHM8228TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM8228TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM8228TRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM8228TRPBF?

All IRFHM8228TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM8228TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM8228TRPBF part is unused and in its original packaging.

Return procedure for IRFHM8228TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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