Infineon Technologies IRFHM8235TRPBF

Overview

IRFHM8235TRPBF from Infineon Technologies is a 25 V, 25 A (T_C = 25°C), low-profile PQFN 3.3 mm × 3.3 mm N-channel HEXFET® Power MOSFET optimized as the high-side control switch in synchronous buck converters. It delivers R_DS(on) = 6.2 mΩ @ V_GS = 10 V and 10.3 mΩ @ V_GS = 4.5 V, with 7.7 nC total gate charge and <4.1°C/W junction-to-case thermal resistance for high-efficiency, high-density DC-DC regulation.

For engineers reviewing the IRFHM8235TRPBF datasheet, IRFHM8235TRPBF pinout, IRFHM8235TRPBF application, or IRFHM8235TRPBF equivalent, key selection criteria include its 25 V V_DSS, 13.4 mΩ R_DS(on) at 4.5 V drive, MSL1 qualification, RoHS-compliant/halogen-free construction, and industry-standard PQFN pinout supporting multi-vendor PCB reuse in compact power stages.

Technical Context

This device is engineered for high-frequency (e.g., 400 kHz) synchronous buck topologies where fast switching, low conduction loss, and robust thermal dissipation are critical. Its low Q_g (7.7 nC typ.) and low C_iss (1040 pF) reduce switching losses, while the integrated body diode supports synchronous rectification with t_rr = 10 ns and Q_rr = 4.9 nC.

The PQFN package features dual-sided thermal interface: bottom-side copper pad enables direct PCB heat sinking (<4.1°C/W R_θJC), while top-side thermal path (R_θJC(top) = 42°C/W) remains secondary. Gate threshold voltage is tightly specified (1.35–2.35 V), ensuring stable turn-on under varying temperature and supply conditions.

Key Specifications

Pinout & Package

IRFHM8235TRPBF uses a 20-pin PQFN 3.3 mm × 3.3 mm package (Outline "C") with exposed bottom thermal pad and dual-row peripheral terminals. Pin numbering follows standard JEDEC outline; pins 1–4 and 17–20 are source terminals, pins 5–8 are gate terminals, and pins 9–16 are drain terminals - enabling parallel connection of multiple terminals per function to minimize bond-wire inductance and resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar control MOSFET applications.

Compared with SiR872DP-T1-GE3 and IPB050N04LG, IRFHM8235TRPBF offers the best balance of low gate charge (7.7 nC), compact PQFN footprint, and proven thermal performance in high-frequency buck converters-making it optimal for space- and efficiency-critical 25 V systems.

Availability

IRFHM8235TRPBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, 5G baseband power, and industrial PLC I/O modules requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for IRFHM8235TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap power solutions.

This part belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and industrial power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFHM8235TRPBF supports 32 A continuous drain current at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package and ensures reliable operation without exceeding 150°C junction temperature under typical PCB copper area conditions.

Does this MOSFET require a gate resistor for safe operation in a synchronous buck converter?

A gate resistor is recommended to dampen ringing and control dV/dt during switching. Typical values range from 1.0 Ω to 4.7 Ω, selected based on driver strength and layout parasitics. The device's low Q_g (7.7 nC) and low C_iss (1040 pF) make it responsive to small gate resistances, but excessive resistance (>10 Ω) risks increased switching losses and shoot-through risk in synchronous configurations.

Can IRFHM8235TRPBF be used as a synchronous rectifier (low-side switch)?

Yes - its low R_DS(on) (6.2 mΩ @ 10 V), fast body diode (t_rr = 10 ns, Q_rr = 4.9 nC), and symmetric source/drain terminal configuration support low-side synchronous rectification. However, optimal performance requires precise timing control to avoid cross-conduction, and gate drive must swing fully to 0 V and ≥10 V to ensure full enhancement and safe turn-off.

Is the exposed thermal pad electrically connected to any internal node?

No - the exposed bottom thermal pad is internally connected only to the drain (D) terminals. It must be soldered to a large PCB copper pour tied to the drain net for effective thermal transfer and electrical integrity. Floating or grounding the pad will compromise thermal performance and may cause reliability issues due to thermal stress mismatch.