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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM830DTR2PBF

Name: IRFHM830DTR2PBF
Brand: Infineon Technologies
SKU: IRFHM830DTR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM830DTR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-VQFN Exposed Pad

Datasheet:: IRFHM830DTR2PBF.pdf

Description:: MOSFET N-CH 30V 20A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:9,800

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Product details

Overview

IRFHM830DTR2PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 40 A N-channel enhancement-mode HEXFET® Power MOSFET in a PQFN 3.3 × 3.3 mm package, featuring 4.3 mΩ max R_DS(on) at V_GS = 10 V, 13 nC typical Q_g, and 1.1 Ω typical gate resistance - optimized as a synchronous rectifier in high-frequency DC-DC buck converters.

For engineers reviewing the IRFHM830DTR2PBF datasheet, IRFHM830DTR2PBF pinout, IRFHM830DTR2PBF application, or IRFHM830DTR2PBF equivalent, key selection criteria include low-conduction-loss capability (R_DS(on) ≤ 4.3 mΩ), fast switching performance (Q_sw = 6.3 nC), thermal resistance to PCB < 3.4 °C/W, and industry-standard PQFN pinout compatibility for multi-vendor design reuse.

Technical Context

This MOSFET employs a trench-gated silicon process with integrated Schottky-like body diode, enabling low forward voltage (V_SD ≤ 0.85 V at I_S = 20 A) and fast reverse recovery (t_rr = 16–24 ns). Its gate threshold voltage (V_GS(th) = 1.35–2.35 V) supports 4.5 V logic-level drive while maintaining robust noise immunity.

The device is characterized for bottom-side thermal dissipation (R_θJC(Bottom) = 3.4 °C/W), with rated continuous drain current of 40 A at T_C(Bottom) = 25 °C and 40 A at T_C(Bottom) = 100 °C - confirming stable operation under sustained high-current, high-temperature PCB mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V input rail systems with 25 % margin against transients
R_DS(on) max @ V_GS = 10 V	4.3 mΩ - enables ≤ 3.4 W conduction loss at 20 A, critical for >95 % efficiency in 12 V → 1 V buck stages
Q_g typical	13 nC - allows fast turn-on with moderate gate driver strength (e.g., 1 A peak)
R_G typical	1.1 Ω - matches standard gate resistor values for EMI-controlled switching edge rates
I_D @ T_C(Bottom) = 25 °C	40 A - defines maximum steady-state current when PCB copper area provides full thermal path
t_rr typical	16 ns - minimizes shoot-through risk and body-diode conduction loss in synchronous rectification
R_θJC(Bottom)	3.4 °C/W - enables ≥37 W power dissipation with 125 °C junction rise over 25 °C board temperature

Pinout & Package

PQFN 3.3 × 3.3 mm Outline "B" package with exposed thermal pad on bottom side; 8-pin configuration with 0.5 mm pitch; RoHS-compliant, MSL1 rating, and 100 % R_G tested.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (internally connected to thermal pad)	Primary current-carrying node; must be soldered to large PCB copper pour for thermal and current handling
8	Gate	Control terminal; requires low-inductance routing and local decoupling due to 13 nC Q_g
- (exposed pad)	Source (common connection point)	Electrical and thermal reference plane; tied directly to source net and ground plane

Key Features

Feature	Design Value
Low R_DS(on) (< 4.3 mΩ)	Reduces I²R losses by >30 % vs. comparable 5–6 mΩ MOSFETs at 20 A, directly improving converter efficiency
Schottky-like intrinsic diode	V_SD ≤ 0.85 V at 20 A enables lower forward drop than standard p-n body diodes, reducing dead-time losses
Low R_θJC(Bottom) (< 3.4 °C/W)	Allows 37 W power dissipation with only 125 °C ΔT, supporting compact, high-power-density designs
Industry-standard PQFN pinout	Enables direct footprint reuse across vendors (e.g., Vishay SiR872DP, ON Semi NTMFS4C09N), reducing layout rework

Applications

Server VRMs

Telecom DC-DC Modules

Use Scenario: High-current, multiphase buck converter supplying core voltage to Xeon/EPYC CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, switching at 500 kHz–1 MHz with precise dead-time control.

Use Value: 4.3 mΩ R_DS(on) and 16 ns t_rr reduce conduction + recovery losses by ~1.2 W per phase vs. legacy 6 mΩ devices.

Use Scenario: 48 V input to 12 V intermediate bus converter in 5G base station power shelf.

IC Role / Device Role / Timing Role: Primary synchronous FET in fixed-frequency 300 kHz buck stage with forced-air cooling.

Use Value: 3.4 °C/W R_θJC(Bottom) enables full 40 A rating without heatsink, saving board space and BOM cost.

Industrial PLC Power Supplies

Automotive ADAS ECUs

Use Scenario: 24 V input to 3.3 V/5 V auxiliary supply powering FPGA and microcontroller rails.

IC Role / Device Role / Timing Role: Low-side switch in compact, thermally constrained buck regulator with >10-year field life requirement.

Use Value: MSL1 rating and 100 % R_G testing ensure assembly yield and long-term parametric stability under thermal cycling.

Use Scenario: 12 V battery-fed buck converter powering radar SoC and image sensor in front-camera ECU.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier operating across -40 °C to +125 °C ambient with transient load steps.

Use Value: V_GS(th) range (1.35–2.35 V) ensures reliable turn-on at cold start (-40 °C) while avoiding spurious conduction during load dump.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay SiR872DP	R_DS(on) = 3.8 mΩ @ 10 V; Q_g = 15.5 nC; same PQFN 3.3 × 3.3 package	Marginally lower conduction loss but higher gate charge increases driver loss at >1 MHz	Prefer for ultra-high-efficiency <500 kHz designs where gate drive loss is secondary
ON Semiconductor NTMFS4C09N	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 12.5 nC; identical pinout and thermal pad layout	Lower Q_g improves switching efficiency but slightly reduced avalanche energy (E_AS = 65 mJ vs. 82 mJ)	Prefer for high-frequency (>800 kHz), low-duty-cycle applications with tight EMI constraints

Compared with SiR872DP and NTMFS4C09N, IRFHM830DTR2PBF offers the highest single-pulse avalanche energy (82 mJ) and best thermal resistance to PCB (3.4 °C/W), making it optimal for industrial and automotive applications demanding robustness under overload and thermal stress.

Availability

IRFHM830DTR2PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC modules, and industrial PLC power supplies requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IRFHM830DTR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET® technology.

This device belongs to Infineon's OptiMOS™ 5 family - engineered specifically for high-efficiency, high-current synchronous rectification in modern DC-DC converters up to 1 MHz switching frequency.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFHM830DTR2PBF supports 40 A continuous drain current at T_C(Bottom) = 100 °C, verified per datasheet page 1 Absolute Maximum Ratings table - enabled by its 3.4 °C/W junction-to-case thermal resistance and robust silicon die construction.

Does this MOSFET require a gate resistor for safe operation?

Yes - a series gate resistor (typically 1–5 Ω) is required to dampen ringing, control dV/dt, and limit peak gate current during switching; the device's 1.1 Ω typical internal gate resistance does not eliminate need for external control.

Is the exposed thermal pad electrically connected to any terminal?

Yes - the exposed bottom thermal pad is internally connected to the Drain (pins 1–7), and must be soldered to a large PCB copper area serving as both thermal sink and high-current return path.

Can IRFHM830DTR2PBF replace IRFHM830DPbF in new designs?

Yes - IRFHM830DTR2PBF is the tape-and-reel variant (400 pcs/reel) of the same die and package as IRFHM830DPbF (tube-packaged); all electrical, thermal, and mechanical specifications are identical per datasheet revision September 2015.

IRFHM830DTR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-VQFN Exposed Pad

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1797 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (3x3)

IRFHM830DTR2PBF FAQ

1.How can I place an order for IRFHM830DTR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM830DTR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM830DTR2PBF reliable?

The price and inventory of IRFHM830DTR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM830DTR2PBF is usually 5 days.

3.What payment methods are accepted for IRFHM830DTR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM830DTR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM830DTR2PBF?

IRFHM830DTR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM830DTR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM830DTR2PBF?

For technical support, including IRFHM830DTR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM830DTR2PBF requirements.

6.How does Aetrix verify that IRFHM830DTR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFHM830DTR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM830DTR2PBF meets industry standards.

7.What is the process for return or replacement of IRFHM830DTR2PBF?

All IRFHM830DTR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM830DTR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM830DTR2PBF part is unused and in its original packaging.

Return procedure for IRFHM830DTR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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