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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM830DTRPBF

Name: IRFHM830DTRPBF
Brand: Infineon Technologies
SKU: IRFHM830DTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM830DTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-VQFN Exposed Pad

Datasheet:: IRFHM830DTRPBF.pdf

Description:: MOSFET N-CH 30V 20A/40A PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFHM830DTRPBF from Infineon Technologies is a 30 V, 40 A (at T_C = 25°C) N-channel PQFN-packaged HEXFET® Power MOSFET with R_DS(on) ≤ 4.3 mΩ @ V_GS = 10 V, Q_g = 13 nC (typ), and R_g = 1.1 Ω - optimized as a synchronous rectifier in high-frequency buck converters for server VRMs and POL modules.

For engineers reviewing the IRFHM830DTRPBF datasheet, IRFHM830DTRPBF pinout, IRFHM830DTRPBF application, or IRFHM830DTRPBF equivalent, key selection criteria include low-conduction-loss capability (≤4.3 mΩ), fast switching (t_r = 20 ns, t_f = 6.7 ns), integrated Schottky-like body diode (V_SD ≤ 0.85 V), thermal resistance R_θJC(Bottom) = 3.4 °C/W, and MSL1 industrial qualification.

Technical Context

This device operates as a low-side synchronous rectifier in DC-DC power stages, leveraging its ultra-low R_DS(on) and low gate charge to minimize conduction and switching losses simultaneously. Its PQFN 3.3 × 3.3 mm package features exposed drain pad for direct PCB thermal coupling and bottom-side heat dissipation.

The intrinsic body diode exhibits fast reverse recovery (t_rr = 16–24 ns, Q_rr = 17–26 nC) and low forward voltage (V_SD ≤ 0.85 V at I_S = 20 A), enabling efficient freewheeling without external diode supplementation in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with 25% margin for transient spikes in point-of-load converters
R_DS(on) max	4.3 mΩ @ V_GS = 10 V - enables <1.7 W conduction loss at 20 A continuous, critical for high-current POL designs
Q_g typ	13 nC - reduces gate drive power and allows use of lower-power drivers in high-frequency (>1 MHz) operation
I_D @ T_C = 25°C	40 A - defines maximum steady-state current handling when mounted on thermally optimized 2-oz copper PCB
R_θJC(Bottom)	3.4 °C/W - enables >30 W power dissipation with ≤100°C junction rise above PCB temperature under forced convection
V_SD max	0.85 V @ I_S = 20 A - lowers freewheeling loss vs. discrete Schottky diodes, improving light-load efficiency
t_r/t_f	20 ns / 6.7 ns - supports clean switching edges in 500 kHz–2 MHz buck converters with minimal EMI generation

Pinout & Package

PQFN 3.3 × 3.3 mm Outline "B" package with exposed drain pad (pin 1–4: Source; pin 5–8: Drain; gate on pin 3 per standard layout). Thermal pad must be soldered to PCB ground plane for rated performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4	Source	Low-impedance return path for load current; tied to PCB ground plane via multiple vias for thermal and electrical integrity
3	Gate	Control terminal requiring <13 nC charge; routed away from noisy power traces to prevent false turn-on
5–8 + Exposed Pad	Drain	Main power input node; exposed pad provides primary thermal path to PCB - must be fully soldered

Key Features

Feature	Design Value
Low R_DS(on) (< 4.3 mΩ)	Reduces I²R conduction loss by >35% vs. legacy 6 mm × 5 mm SO-8 MOSFETs at same current density
Schottky-like body diode	Enables synchronous rectification without external diode - eliminates 0.3–0.5 V forward drop penalty
R_θJC(Bottom) = 3.4 °C/W	Allows >3× higher power density than DPAK packages at identical board area and cooling conditions
MSL1 rating & 100% R_g tested	Eliminates reflow-induced gate oxide damage risk and ensures consistent switching timing across production lots
Industry-standard pinout	Supports drop-in replacement in existing layouts designed for competing PQFN 3.3 × 3.3 mm MOSFETs

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: High-current (30–60 A), high-efficiency (≥92%) 12 V → 1.2 V conversion in AI accelerator cards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switched at 600–800 kHz with precise dead-time control.

Use Value: 4.3 mΩ R_DS(on) and 13 nC Q_g reduce total power loss by 1.2 W per phase vs. 6 mΩ alternatives, lowering thermal design burden.

Use Scenario: Compact 48 V → 3.3 V/5 V POL supply in 5G baseband units with strict size constraints.

IC Role / Device Role / Timing Role: Secondary-side switch in isolated flyback or non-isolated buck; handles 15–25 A peak currents.

Use Value: 3.3 × 3.3 mm footprint and 1.0 mm profile enable full power stage integration into <100 mm² board area.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Supplies

Use Scenario: Auxiliary 24 V → 5 V/3.3 V supply powering isolated gate driver ICs in servo inverters.

IC Role / Device Role / Timing Role: Primary switch in secondary-side synchronous rectifier stage; operates continuously at 100% duty cycle during standby.

Use Value: MSL1 qualification and -55°C to +150°C operating range ensure reliability in harsh ambient environments with thermal cycling.

Use Scenario: Power management for radar sensor modules requiring low EMI and high transient immunity.

IC Role / Device Role / Timing Role: Synchronous rectifier in 12 V → 1.8 V buck stage; subjected to load dump and cold-crank transients.

Use Value: 30 V V_DS rating with 20 A pulsed avalanche capability (E_AS = 82 mJ) withstands automotive line transients without clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.7 mΩ @ 10 V; Q_g = 15.5 nC; same PQFN 3.3 × 3.3 mm package	Slightly lower conduction loss but higher gate charge increases driver loss at >1 MHz	Preferred for <1 MHz designs prioritizing lowest R_DS(on); verify gate driver slew rate compatibility
IPD95R1K2P7ATMA1	950 V SiC MOSFET; R_DS(on) = 1.2 Ω; not pin-compatible; requires gate driver redesign	Used in high-voltage PFC or isolated DC-DC, not low-voltage synchronous rectification	Not a functional substitute - only considered if system-level architecture shifts to wide-bandgap topology

Compared with SiR872DP-T1-GE3, IRFHM830DTRPBF trades 0.6 mΩ higher R_DS(on) for 2.5 nC lower Q_g, favoring high-frequency efficiency; IPD95R1K2P7ATMA1 belongs to a different voltage class and cannot replace it in 30 V synchronous rectifier roles.

Availability

IRFHM830DTRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drive auxiliary supplies, and automotive ADAS power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFHM830DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current for IRFHM830DTRPBF at 100°C case temperature?

The datasheet specifies I_D = 40 A at T_C = 100°C with V_GS = 10 V - identical to its rating at 25°C due to the device's flat R_DS(on) vs. temperature curve above 100°C and robust thermal design of the PQFN package.

Does IRFHM830DTRPBF require a gate resistor for stability in synchronous buck applications?

Yes - although R_g is internally 1.1 Ω, an external 2–5 Ω series gate resistor is recommended to dampen ringing, control dV/dt, and prevent shoot-through during hard switching; values depend on driver strength and layout parasitics.

Can IRFHM830DTRPBF be used in linear regulator configurations?

No - its Safe Operating Area (SOA) limits continuous linear-mode operation to <1.5 A at 24 V due to thermal constraints; the device is characterized and qualified exclusively for switching applications with defined pulse widths and duty cycles.

Is the exposed drain pad electrically isolated from the source terminals?

No - the exposed drain pad is internally connected to pins 5–8 and forms the primary drain terminal; it must be soldered to a dedicated drain net on the PCB, not to ground or source, to avoid short-circuit failure.

IRFHM830DTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-VQFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1797 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 37W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (3x3)

IRFHM830DTRPBF FAQ

1.How can I place an order for IRFHM830DTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM830DTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM830DTRPBF reliable?

The price and inventory of IRFHM830DTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM830DTRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM830DTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM830DTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM830DTRPBF?

IRFHM830DTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM830DTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM830DTRPBF?

For technical support, including IRFHM830DTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM830DTRPBF requirements.

6.How does Aetrix verify that IRFHM830DTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM830DTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM830DTRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM830DTRPBF?

All IRFHM830DTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM830DTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM830DTRPBF part is unused and in its original packaging.

Return procedure for IRFHM830DTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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