Infineon Technologies IRFHM830TRPBF
- Part No.:
- IRFHM830TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
IRFHM830TRPBF.pdf
- Description:
- MOSFET N-CH 30V 21A/40A PQFN
- Quantity:
- Payment:

- Shipping:

Inventory:7,703
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Product details
Overview
IRFHM830TRPBF from Infineon Technologies is a 30 V, 77 A (TC(Bottom) = 25°C) N-channel Trench MOSFET in PQFN 3.3 × 3.3 mm package, featuring 3.8 mΩ RDS(on) @ 10 V, 15 nC typical Qg, and 2.5 Ω gate resistance-designed for high-efficiency DC motor inverters in battery-powered tools and e-bikes.
For engineers reviewing the IRFHM830TRPBF datasheet, IRFHM830TRPBF pinout, IRFHM830TRPBF application, or IRFHM830TRPBF equivalent, key selection criteria include low-conduction-loss switching at 4.5 V gate drive, thermal performance under PCB-limited cooling, and compatibility with standard SMT reflow profiles for high-volume motor control modules.
Technical Context
This MOSFET employs Infineon's HEXFET® Trench technology to achieve sub-4 mΩ on-resistance with fast switching (td(on) = 12 ns, tf = 9.2 ns) and low gate charge (Qg = 15 nC typ). Its dual-side thermal path design enables 3.4 °C/W junction-to-case (bottom) thermal resistance, supporting high-current operation without external heatsinking when mounted on 2 oz copper PCBs.
The device integrates a robust body diode with 37 A continuous source current rating, 1.0 V forward voltage at 20 A, and 17–26 ns reverse recovery time-enabling synchronous rectification and freewheeling in half-bridge motor drivers without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - supports 24 V nominal battery systems with 20 % overvoltage margin |
| RDS(on) max @ 10 V | 3.8 mΩ - limits conduction loss to <1.5 W at 77 A continuous drain current |
| Qg typical | 15 nC - enables efficient 100 kHz+ PWM switching with ≤2 W gate driver power dissipation |
| ID @ TC(Bottom) = 25°C | 77 A - delivers full rated motor torque in compact BLDC inverter designs |
| RθJC(Bottom) | 3.4 °C/W - allows 37 W power dissipation with ≤125 °C junction rise above 25 °C PCB temperature |
| VGS(th) | 1.35–2.35 V - ensures reliable turn-on with 3.3 V logic-level microcontrollers |
| Ciss | 2155 pF - determines Miller effect magnitude and gate drive stability in high-dV/dt environments |
Pinout & Package
PQFN 3.3 × 3.3 mm outline "B" package with exposed thermal pad on bottom side; 8-pin configuration optimized for low-inductance, high-current routing and dual-side thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (internally connected) | Primary current path from load to ground; electrically tied to exposed thermal pad for enhanced heat sinking |
| 8 | Gate | Control input requiring ≤15 nC charge for full enhancement; isolated by 2.5 Ω internal gate resistance |
| Exposed Pad | Drain (thermal & electrical) | Must be soldered to large PCB copper area for thermal management and low-impedance return path |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) < 3.8 mΩ | Reduces I²R losses by ≥30 % vs. legacy 5 mΩ MOSFETs in 24 V motor drives at 50 A RMS |
| RθJC(Bottom) < 3.4 °C/W | Enables 37 W continuous power handling without heatsink when using 2-layer 2 oz Cu PCB |
| 100 % Rg tested | Guarantees gate resistance within ±15 % tolerance, ensuring consistent switching timing across production lots |
| Low profile < 1.0 mm | Permits stacking of dual-sided motor control boards or integration into ultra-thin power modules |
| MSL1 industrial qualification | Supports single-reflow assembly without moisture sensitivity concerns in high-reliability industrial applications |
Applications
| Power Tools Motor Inverter | E-Bike Mid-Drive Controller |
|---|---|
Use Scenario: High-torque, intermittent-duty BLDC inverter in cordless drills and impact drivers operating from 18–24 V Li-ion packs. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter leg; handles peak currents up to 308 A pulsed with <12 ns turn-on delay. Use Value: 3.8 mΩ RDS(on) and 3.4 °C/W thermal resistance enable >97 % efficiency at 20 A continuous, extending battery runtime per charge cycle. | Use Scenario: Compact mid-drive motor controller for 250–350 W e-bikes with regenerative braking and torque-sensing feedback. IC Role / Device Role / Timing Role: High-frequency (20–50 kHz) PWM switch in synchronous rectifier mode during freewheeling phase. Use Value: Body diode VSD ≤ 1.0 V and Qrr = 23–35 nC minimize switching loss and EMI during zero-cross transitions. |
| Portable Medical Pump Driver | Industrial HVAC Fan Module |
Use Scenario: Battery-backed infusion pump requiring silent, ripple-free DC motor control with fail-safe shutdown capability. IC Role / Device Role / Timing Role: Isolated half-bridge switch with integrated thermal protection; operates at 10–25 kHz with precise duty-cycle control. Use Value: VGS(th) range (1.35–2.35 V) ensures compatibility with low-voltage MCU GPIOs and eliminates need for level-shifting circuitry. | Use Scenario: Variable-speed fan module for commercial HVAC systems powered from 24 V DC backup supplies. IC Role / Device Role / Timing Role: Main power switch in buck-derived DC-DC stage regulating fan voltage; withstands 100 % load transients. Use Value: 308 A pulsed drain current rating and 82 mJ avalanche energy support robust operation during motor stall events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB036N04LG | 40 V VDSS, 3.6 mΩ RDS(on), TO-263 package | Larger footprint, higher thermal mass; requires heatsink for same 77 A rating | Preferred where board space permits and higher voltage margin is needed |
| SiR872DP | 30 V VDSS, 3.7 mΩ RDS(on), 5×6 mm PowerPAK SO-8 | Higher RθJA (46 °C/W), lower current density due to larger footprint | Selected when existing layout uses SO-8 footprints and thermal budget allows |
Compared with IPB036N04LG and SiR872DP, IRFHM830TRPBF offers superior power density (3.3 × 3.3 mm) and lowest thermal resistance to PCB (3.4 °C/W), making it optimal for space-constrained, high-current motor inverters where thermal management relies primarily on PCB copper.
Availability
IRFHM830TRPBF is available at Aetrix Electronics and suitable for battery-operated motor inverters, portable medical devices, and industrial HVAC fan modules requiring stable component supply and long-term lifecycle continuity.
Supply support for IRFHM830TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRFHM830TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-current switching in battery-powered motor control applications demanding minimal conduction and switching losses.
FAQ
What is the maximum continuous drain current for IRFHM830TRPBF at 100°C case temperature?
The maximum continuous drain current is 49 A when the bottom case temperature is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PQFN package and PCB thermal interface; operation above this current requires active cooling or reduced ambient temperature.
Does IRFHM830TRPBF require a gate resistor for safe operation?
While the device includes an internal 2.5 Ω gate resistance, an external series gate resistor (typically 5–10 Ω) is recommended to dampen ringing, control dV/dt, and limit peak gate current during fast switching. This improves EMI performance and prevents shoot-through in half-bridge configurations.
Can IRFHM830TRPBF be used with 3.3 V microcontroller GPIOs?
Yes-the gate threshold voltage ranges from 1.35 V to 2.35 V, ensuring reliable turn-on with 3.3 V logic. However, full enhancement (to achieve 3.8 mΩ RDS(on)) requires ≥4.5 V gate drive; for optimal conduction loss, use a dedicated gate driver or level shifter.
Is the exposed thermal pad electrically isolated from the drain terminals?
No-the exposed thermal pad is internally connected to the drain terminals (pins 1–7) and must be soldered to a PCB copper pour tied to the system drain net. This dual connection provides both thermal conduction and low-inductance current return, critical for high-frequency motor drive stability.
IRFHM830TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 31 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2155 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.7W (Ta), 37W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN-Dual (3.3x3.3)
IRFHM830TRPBF FAQ
1.How can I place an order for IRFHM830TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFHM830TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFHM830TRPBF reliable?
The price and inventory of IRFHM830TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM830TRPBF is usually 5 days.
3.What payment methods are accepted for IRFHM830TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM830TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFHM830TRPBF?
IRFHM830TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFHM830TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFHM830TRPBF?
For technical support, including IRFHM830TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM830TRPBF requirements.
6.How does Aetrix verify that IRFHM830TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFHM830TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM830TRPBF meets industry standards.
7.What is the process for return or replacement of IRFHM830TRPBF?
All IRFHM830TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM830TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFHM830TRPBF part is unused and in its original packaging.
Return procedure for IRFHM830TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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