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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM831TR2PBF

Name: IRFHM831TR2PBF
Brand: Infineon Technologies
SKU: IRFHM831TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM831TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFHM831TR2PBF.pdf

Description:: MOSFET N-CH 30V 14A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:2,148

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Product details

Overview

IRFHM831TR2PBF from Infineon Technologies is a 30 V, 40 A (T_C = 25°C) N-channel PQFN power MOSFET with R_DS(on) = 6.6 mΩ (typ.) at V_GS = 10 V, Q_g = 7.3 nC (typ.), and R_θJC(Bottom) < 4.7°C/W - optimized for high-frequency synchronous buck converter top-side switching in server VRMs and POL converters.

For engineers reviewing the IRFHM831TR2PBF datasheet, IRFHM831TR2PBF pinout, IRFHM831TR2PBF application, or IRFHM831TR2PBF equivalent, key selection criteria include low gate charge for ZVS/ZCS compatibility, ultra-low thermal resistance to PCB for direct-bottom-side cooling, 100% R_g testing for gate drive robustness, and MSL1 industrial qualification for high-reliability assembly.

Technical Context

This HEXFET® device uses trench-gate silicon technology to achieve sub-7 mΩ on-resistance with 7.3 nC total gate charge, enabling efficient operation at switching frequencies up to 1 MHz. Its PQFN 3.3 × 3.3 mm package features exposed drain pad on bottom side and standard 3-pin layout (Drain–Source–Gate), supporting dual-side cooling when mounted on thermally enhanced PCBs.

The MOSFET exhibits V_GS(th) = 1.8 V (typ.), 0.5 Ω gate resistance (typ.), and 190 pF output capacitance (C_oss) at V_DS = 25 V - parameters critical for predicting turn-on/turn-off timing (t_d(on) = 6.9 ns, t_f = 4.7 ns) and minimizing voltage overshoot in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 12 V input bus systems and 5 V/3.3 V output rails
R_DS(on) @ V_GS = 10 V	6.6 mΩ (typ.) - enables ≤1.0 W conduction loss at 40 A continuous current with minimal heatsinking
Q_g	7.3 nC (typ.) - reduces gate driver power demand and supports fast switching with low EMI
R_θJC(Bottom)	< 4.7°C/W - allows direct thermal coupling to PCB copper pour for >27 W power dissipation at T_C = 25°C
I_D @ T_C = 25°C	40 A - rated continuous drain current under bottom-side case temperature measurement condition
V_GS(th)	1.8 V (typ.) - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers
C_oss	190 pF @ V_DS = 25 V - determines resonant tank behavior during zero-voltage switching transitions

Pinout & Package

PQFN 3.3 × 3.3 mm outline "B" package with exposed drain pad on bottom surface, 0.95 mm max height, and industry-standard 3-terminal configuration. Compatible with standard SMT reflow profiles and stencil-printed solder paste.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pad)	Main current path output terminal	Exposed copper pad on bottom - primary thermal and electrical connection to PCB ground plane or power plane
Source	Current return path and reference node	Top-side solderable terminal - connects to source of synchronous rectifier or low-side switch in half-bridge
Gate	Control electrode for channel modulation	Top-side solderable terminal - requires low-inductance routing and local gate resistor (R_G = 0.5 Ω typ.) for controlled dV/dt

Key Features

Feature	Design Value
Low gate charge	7.3 nC typical - cuts switching losses by ≥35% vs. comparable 30 V MOSFETs with Q_g > 11 nC
Ultra-low R_θJC(Bottom)	< 4.7°C/W - enables >2× higher power density than SO-8 packages with similar R_DS(on)
100% R_g tested	Guaranteed 0.5 Ω ±15% - eliminates gate oscillation risk and improves drive circuit stability
MSL1 rating	Unlimited floor life at ≤30°C/60% RH - eliminates bake requirements before SMT assembly
RoHS & halogen-free	No Pb, Br, or Cl compounds - meets IPC-1752A Class 1 material declaration and EU ELV compliance

Applications

Server Voltage Regulator Modules

Point-of-Load Converters

Use Scenario: High-current CPU/GPU core supply delivering up to 120 A from 12 V input using multiphase buck topology.

IC Role / Device Role / Timing Role: Top-side high-side switch operating at 500 kHz–1 MHz with synchronous rectification.

Use Value: 6.6 mΩ R_DS(on) and 7.3 nC Q_g reduce combined conduction + switching loss to < 2.1 W per phase at 40 A, enabling 94% peak efficiency.

Use Scenario: Compact 3.3 V/20 A rail for FPGA I/O banks in telecom baseband units.

IC Role / Device Role / Timing Role: Primary switching FET in single-phase buck converter with ceramic output capacitor bank.

Use Value: Low C_oss (190 pF) and fast fall time (4.7 ns) minimize dead-time losses and improve transient response to load steps >5 A/µs.

Industrial Motor Drive Gate Drivers

DC-DC Modules for Datacom Equipment

Use Scenario: Half-bridge gate driver stage powering 24 V BLDC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in isolated gate driver feedback loop with bootstrap high-side biasing.

Use Value: 1.8 V V_GS(th) ensures clean turn-on with 3.3 V microcontroller GPIO; 40 A I_D rating supports 3× peak motor surge currents.

Use Scenario: Input-stage 48 V-to-12 V intermediate bus converter in 1 RU network switch chassis.

IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or LLC resonant topology with ZVS capability.

Use Value: 30 V V_DS rating and 50 mJ E_AS support safe operation during line transients and short-circuit events without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 5.8 mΩ @ 10 V, Q_g = 10.5 nC, same PQFN 3.3 × 3.3 mm package	Higher gate charge increases driver loss and limits max frequency to ~700 kHz	Select when lowest possible conduction loss dominates over switching loss in <600 kHz designs
DMTH3006LPS-13	R_DS(on) = 7.2 mΩ @ 10 V, Q_g = 6.5 nC, same footprint but no MSL1 rating	Lacks industrial qualification - not recommended for uncontrolled humidity environments	Select only for cost-sensitive consumer applications where bake cycles are acceptable

Compared with SiR872DP-T1-GE3 and DMTH3006LPS-13, IRFHM831TR2PBF delivers optimal balance of low Q_g, guaranteed R_g, and MSL1 reliability - making it preferred for high-volume server VRMs requiring consistent ZVS performance and zero post-reflow defects.

Availability

IRFHM831TR2PBF is available at Aetrix Electronics and suitable for server voltage regulator modules, point-of-load converters, and industrial motor drive gate drivers requiring stable component supply across multi-year production cycles.

Supply support for IRFHM831TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency DC-DC conversion in datacenter, telecom, and industrial power systems where thermal density and switching speed are critical constraints.

FAQ

What is the maximum continuous drain current for IRFHM831TR2PBF at 100°C case temperature?

The maximum continuous drain current is 28 A when the bottom-side case temperature (T_C) is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PQFN package and must be validated with actual board-level thermal design using the 4.7°C/W R_θJC(Bottom) value.

Does IRFHM831TR2PBF support 3.3 V gate drive without external level shifting?

Yes - with a typical gate threshold voltage of 1.8 V and guaranteed maximum of 2.35 V, the device fully enhances at 3.3 V gate drive. However, R_DS(on) rises to 10.7–12.6 mΩ at V_GS = 4.5 V, so 3.3 V operation is viable only in low-current or thermally relaxed applications.

How does the 100% R_g test impact gate driver design?

The 100% gate resistance screening ensures each unit has R_g = 0.5 Ω ±15%, eliminating variation-induced gate ringing and allowing fixed-value gate resistors (e.g., 5.1 Ω) to reliably control dV/dt without iterative tuning - reducing design cycle time and improving production yield.

Can IRFHM831TR2PBF be used in avalanche-rated circuits?

Yes - it is characterized for unclamped inductive switching with E_AS = 50 mJ (single-pulse, thermally limited) and I_AR = 12 A. Designers must limit repetitive avalanche energy per pulse to ≤10 mJ and ensure junction temperature remains below 150°C using the provided Z_thJC curves and thermal modeling.

IRFHM831TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1050 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (3x3)

IRFHM831TR2PBF FAQ

1.How can I place an order for IRFHM831TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM831TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM831TR2PBF reliable?

The price and inventory of IRFHM831TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM831TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFHM831TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM831TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM831TR2PBF?

IRFHM831TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM831TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM831TR2PBF?

For technical support, including IRFHM831TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM831TR2PBF requirements.

6.How does Aetrix verify that IRFHM831TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFHM831TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM831TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFHM831TR2PBF?

All IRFHM831TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM831TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM831TR2PBF part is unused and in its original packaging.

Return procedure for IRFHM831TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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