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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM831TRPBF

Name: IRFHM831TRPBF
Brand: Infineon Technologies
SKU: IRFHM831TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM831TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFHM831TRPBF.pdf

Description:: MOSFET N-CH 30V 14A/40A PQFN

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Product details

Overview

IRFHM831TRPBF from Infineon Technologies is a 30 V, 40 A (T_C = 25°C) N-channel PQFN power MOSFET with R_DS(on) = 6.6 mΩ (typ) at V_GS = 10 V, Q_g = 7.3 nC (typ), and R_θJC(Bottom) < 4.7°C/W - optimized as a high-efficiency synchronous rectifier or control switch in DC-DC buck converters for server VRMs and telecom POL modules.

For engineers reviewing the IRFHM831TRPBF datasheet, IRFHM831TRPBF pinout, IRFHM831TRPBF application, or IRFHM831TRPBF equivalent, key selection criteria include low gate charge for ZVS/ZCS switching, ultra-low thermal resistance to PCB for high-current density layouts, and industry-standard PQFN 3.3 × 3.3 mm footprint compatibility with multi-vendor board designs.

Technical Context

This HEXFET® device uses trench-gate silicon technology to achieve sub-7 mΩ on-resistance at 10 V drive while maintaining fast switching (t_d(on) = 6.9 ns, t_f = 4.7 ns) and low output capacitance (C_oss = 190 pF at V_DS = 25 V). Its body diode exhibits t_rr = 15–22 ns and Q_rr = 16–24 nC under 300 A/µs di/dt, enabling efficient synchronous rectification without external Schottky replacement.

The PQFN package integrates an exposed drain pad on the bottom surface, enabling direct thermal coupling to the PCB copper plane. Gate resistance is factory-trimmed and 100% tested (R_g = 0.5 Ω typ), ensuring consistent turn-on timing across production lots and reducing gate driver design margin requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 12 V and 24 V input bus architectures with 2× voltage margin for transient spikes.
R_DS(on) @ V_GS = 10 V	6.6 mΩ (typ) - enables ≤1.0 W conduction loss at 40 A continuous drain current with minimal heatsinking.
Q_g	7.3 nC (typ) - reduces gate driver power consumption and allows use of low-power controllers in high-frequency (>1 MHz) converters.
R_θJC(Bottom)	< 4.7°C/W - permits >27 W power dissipation at T_C = 25°C when mounted on ≥2 oz Cu PCB with thermal vias.
I_D @ T_C = 25°C	40 A - rated for continuous operation in high-current POL stages without derating below 100°C case temperature.
t_r/t_f	12 ns / 4.7 ns - supports clean edge transitions in hard-switched topologies with minimal EMI generation.
V_SD	1.0 V @ I_S = 12 A - defines forward voltage drop of integrated body diode during freewheeling phase in buck converters.

Pinout & Package

PQFN 3.3 × 3.3 mm, 8-pin package with exposed drain pad (Pin 1–3: Source; Pin 4–6: Drain; Pin 7–8: Gate; Bottom thermal pad: Drain). RoHS-compliant, MSL1, industrial temperature qualified (−55°C to +150°C).

Pin/Terminal	Circuit Role	Design Meaning
1–3 (Top side)	Source	Common return path for load current; electrically tied to internal source metallization and bottom thermal pad via internal vias.
4–6 (Top side)	Drain	Main high-side current path; connected directly to exposed bottom drain pad for lowest possible R_DS(on) and thermal resistance.
7–8 (Top side)	Gate	Control terminal with 0.5 Ω typical series resistance; requires <10 V drive for full enhancement; no level-shifting needed in low-side configurations.
Bottom pad	Drain (thermal & electrical)	Primary heat extraction surface; must be soldered to ≥200 mm² copper pour with ≥8 thermal vias (0.3 mm diameter) for rated power handling.

Key Features

Feature	Design Value
Low gate charge (7.3 nC typ)	Reduces switching losses by >35% vs. comparable 30 V MOSFETs with Q_g > 11 nC, enabling higher frequency operation without efficiency penalty.
Thermal resistance <4.7°C/W (Junction-to-Case, Bottom)	Allows PCB to serve as primary heatsink - eliminates need for discrete heatsinks in 20–30 A POL applications.
100% R_g tested	Guarantees gate timing consistency across batches, simplifying gate driver selection and eliminating need for external gate resistor tuning.
Industry-standard PQFN 3.3 × 3.3 mm pinout	Enables drop-in replacement with competing 30 V MOSFETs (e.g., Vishay SiR872DP, ON Semi NTMFS4C09N) without layout revision.
Low-profile package (<1.0 mm height)	Supports ultra-thin VRM designs (<3.5 mm total height) required for OCP-compliant server DIMMs and PCIe add-in cards.

Applications

Server Voltage Regulator Modules (VRMs)

Telecom Point-of-Load (POL) Converters

Use Scenario: High-current (≥30 A), high-frequency (≥500 kHz) buck converter supplying CPU core voltage in dual-socket x86 servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating in continuous conduction mode with 10 V gate drive from integrated controller.

Use Value: 6.6 mΩ R_DS(on) and 4.7°C/W thermal resistance reduce conduction loss by 1.8 W and junction temperature rise by 8.5°C vs. legacy 8.5 mΩ devices at 40 A.

Use Scenario: Compact 12 V input → 3.3 V/25 A output POL module for 5G baseband processing units.

IC Role / Device Role / Timing Role: High-side control MOSFET driven by external gate driver with 4.5 V logic-level compatibility.

Use Value: 7.3 nC Q_g enables 1 MHz switching with <5% duty cycle loss, increasing power density by 22% over 500 kHz designs using 12 nC alternatives.

Industrial Motor Drive Half-Bridges

Automotive ADAS Power Supplies

Use Scenario: 24 V input H-bridge for BLDC fan control in HVAC systems with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting reverse recovery current during dead-time intervals.

Use Value: 15–22 ns t_rr and 16–24 nC Q_rr minimize shoot-through risk and reduce snubber losses by 30% compared to standard 30 V MOSFETs with t_rr > 35 ns.

Use Scenario: 12 V battery-fed 5 V/10 A power supply for radar sensor modules requiring AEC-Q101 qualification support.

IC Role / Device Role / Timing Role: Primary switching element in isolated flyback secondary-side synchronous rectifier stage.

Use Value: MSL1 rating and −55°C to +150°C operating range ensure reliability in under-hood environments; 1.0 V V_SD improves light-load efficiency by 2.1% vs. Schottky diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay SiR872DP	R_DS(on) = 7.0 mΩ @ 10 V; Q_g = 10.2 nC; R_θJC = 5.2°C/W	Higher gate charge increases driver loss; slightly higher thermal resistance limits max current at elevated ambient.	Preferred where board space allows larger gate driver ICs and thermal margin exists above 85°C ambient.
ON Semiconductor NTMFS4C09N	R_DS(on) = 6.8 mΩ @ 10 V; Q_g = 8.5 nC; R_θJC = 4.9°C/W; AEC-Q101 qualified	Marginally higher Q_g and thermal resistance; adds automotive qualification not required in industrial/server use.	Better suited for automotive ADAS applications requiring AEC-Q101; less optimal for high-frequency server VRMs due to 1.2 nC higher Q_g.

Compared with SiR872DP and NTMFS4C09N, IRFHM831TRPBF delivers the lowest combined Q_g/R_DS(on) ratio (1.10 nC/mΩ) and best thermal interface to PCB - making it optimal for space-constrained, high-frequency, high-current DC-DC stages where thermal headroom and switching loss are critical.

Availability

IRFHM831TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drives, and automotive ADAS power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IRFHM831TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power MOSFETs and GaN solutions.

This device belongs to Infineon's HEXFET® PQFN power MOSFET product line, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems where thermal performance and switching efficiency are paramount.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFHM831TRPBF supports 28 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for R_DS(on) increase with temperature and thermal derating based on the 0.02 W/°C linear derating factor from 27 W at 25°C.

Is this MOSFET suitable for 4.5 V gate drive in logic-level applications?

Yes - the device has V_GS(th) = 1.35–2.35 V and R_DS(on) = 10.7–12.6 mΩ at V_GS = 4.5 V and I_D = 12 A, confirming robust enhancement at 4.5 V. It is widely used in 5 V logic-driven synchronous buck stages without gate boosting.

Does the PQFN 3.3 × 3.3 mm package require special PCB layout considerations?

Yes - the exposed drain pad must be connected to a minimum 200 mm² copper area with ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) to achieve the rated R_θJC < 4.7°C/W. Footprint and stencil recommendations are detailed in Infineon Application Note AN-1136.

What is the avalanche energy rating for single-pulse unclamped inductive switching?

The device is rated for E_AS = 50 mJ (thermally limited) at I_D = 12 A and starting T_J = 25°C, per Figure 13. This supports robustness in hard-switched circuits with moderate inductive energy, but repeated avalanche operation is not recommended.

IRFHM831TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1050 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 27W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (3x3)

IRFHM831TRPBF FAQ

1.How can I place an order for IRFHM831TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM831TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM831TRPBF reliable?

The price and inventory of IRFHM831TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM831TRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM831TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM831TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM831TRPBF?

IRFHM831TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM831TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM831TRPBF?

For technical support, including IRFHM831TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM831TRPBF requirements.

6.How does Aetrix verify that IRFHM831TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM831TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM831TRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM831TRPBF?

All IRFHM831TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM831TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM831TRPBF part is unused and in its original packaging.

Return procedure for IRFHM831TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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