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Infineon Technologies IRFHM8326TRPBF
- Part No.:
- IRFHM8326TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IRFHM8326TRPBF.pdf
- Description:
- MOSFET N-CH 30V 25A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,075
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Product details
Overview
IRFHM8326TRPBF from Infineon Technologies is a 30 V, 70 A (TC = 25°C) N-channel PQFN power MOSFET with RDS(on) = 3.8 mΩ (typ.) at VGS = 10 V and 5.2 mΩ (max.) at VGS = 4.5 V, optimized for high-current load switching in notebook battery management and synchronous buck converter topologies.
For engineers reviewing the IRFHM8326TRPBF datasheet, IRFHM8326TRPBF pinout, IRFHM8326TRPBF application, or IRFHM8326TRPBF equivalent, key selection criteria include low thermal resistance (3.4°C/W junction-to-case bottom), industry-standard PQFN 3.3 × 3.3 mm pinout, and gate charge profile (Qg = 20 nC typ. at VGS = 4.5 V) enabling efficient 4.5 V logic-level drive.
Technical Context
This device employs trench-gate silicon technology to achieve low RDS(on) and fast switching with Qgd = 6.5 nC and Ciss = 2496 pF at VDS = 0 V, supporting high-frequency DC-DC conversion up to 1 MHz. Its body diode exhibits trr = 15 ns and Qrr = 14 nC under defined conditions, minimizing recovery losses in synchronous rectification.
The PQFN package features exposed drain pads on both top and bottom surfaces, enabling dual-side thermal dissipation. Absolute maximum VGS is ±20 V, and gate threshold voltage is tightly specified at 1.2–2.2 V, ensuring robust turn-on margin with 4.5 V microcontroller outputs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Supports 24 V nominal input rails with 25% headroom for transients |
| RDS(on) max @ VGS = 10 V | 4.7 mΩ - Enables <1.5 W conduction loss at 70 A continuous drain current |
| RDS(on) max @ VGS = 4.5 V | 6.7 mΩ - Ensures full enhancement with standard 4.5 V logic drivers |
| Qg typical | 20 nC - Reduces gate drive power and enables efficient 1–2 MHz switching |
| ID @ TC = 25°C | 70 A - Delivers high current density in compact 3.3 × 3.3 mm footprint |
| RθJC (Bottom) | 3.4°C/W - Allows direct PCB copper thermal spreading for >30 W power handling |
| VGS(th) | 1.2–2.2 V - Guarantees reliable turn-on with 3.3 V or 4.5 V control signals |
Pinout & Package
PQFN 3.3 mm × 3.3 mm package with exposed drain thermal pad on bottom surface and integrated source/ground connections on top side; RoHS-compliant, MSL1 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Low-inductance parallel source connection for return path integrity and thermal conduction |
| 5, 6, 7, 8 | Drain | Exposed bottom drain pad + top-side drain terminals for dual-sided heat extraction |
| Pin 1 (marked) | Gate | Logic-level input terminal; requires <20 nC charge for full enhancement at 4.5 V |
Key Features
| Feature | Design Value |
|---|---|
| Low thermal resistance to PCB | 3.4°C/W junction-to-case (bottom) enables >30 W continuous dissipation via 2 oz copper |
| Low-profile package | 1.05 mm height supports ultra-thin notebook and tablet battery switch designs |
| Industry-standard pinout | Compatible with multiple vendors' 3.3 × 3.3 mm PQFN load switches, easing second-source qualification |
| Enhanced body diode performance | trr = 15 ns and Qrr = 14 nC reduce shoot-through risk in synchronous buck operation |
Applications
| Battery Charge/Discharge Switch | System Load Switch |
|---|---|
|
Use Scenario: Bidirectional current control between main battery and backup cell in ultrabook platforms. IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by dedicated battery gauge IC with 4.5 V gate drive. Use Value: 6.7 mΩ RDS(on) at 4.5 V ensures <100 mV drop at 15 A discharge, preserving runtime and thermal margin. |
Use Scenario: Hot-swap power enable for PCIe add-in cards and USB-C PD peripherals. IC Role / Device Role / Timing Role: Low-RDS(on) load switch with integrated overcurrent protection feedback path. Use Value: 3.4°C/W thermal resistance allows sustained 50 A peak current without external heatsink in 10 mm² board area. |
| Synchronous Buck High-Side FET | Synchronous Buck Low-Side FET |
|
Use Scenario: High-efficiency 12 V → 1.2 V VRM in mobile CPU power delivery. IC Role / Device Role / Timing Role: Fast-switching high-side switch driven by integrated controller with 20 nC Qg. Use Value: Qgd/Qg ratio of 0.325 minimizes Miller-induced shoot-through during hard switching transitions. |
Use Scenario: Complementary low-side switch in dual-phase notebook core voltage regulator. IC Role / Device Role / Timing Role: Optimized for 100% duty-cycle conduction with minimal RDS(on) and low Coss. Use Value: Coss = 524 pF at VDS = 10 V reduces dead-time losses and improves light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 3.6 mΩ @ 10 V; Qg = 22.5 nC; same PQFN 3.3 × 3.3 mm package | Higher gate charge increases driver loss at >2 MHz; identical thermal performance | Preferred when lowest RDS(on) is critical and gate drive capability supports higher Qg |
| DMTH3007LPS-13 | RDS(on) = 5.0 mΩ @ 4.5 V; Qg = 17.5 nC; slightly larger 5 × 6 mm SO-8 package | Larger footprint limits use in space-constrained notebooks; lower Qg eases 3.3 V drive | Select when 3.3 V gate drive is mandatory and board area permits SO-8 layout |
Compared with SiR872DP-T1-GE3 and DMTH3007LPS-13, IRFHM8326TRPBF delivers the best balance of 4.5 V drive compatibility, thermal performance, and footprint density for notebook battery and VRM applications requiring ≤1.05 mm height.
Availability
IRFHM8326TRPBF is available at Aetrix Electronics and suitable for notebook PC battery management, system load switching, and synchronous buck converter design requiring stable component supply and long-term industrial availability.
Supply support for IRFHM8326TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, low-voltage DC-DC conversion and battery protection circuits in portable computing and power delivery systems.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFHM8326TRPBF supports 44 A continuous drain current at TC = 100°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package and must be validated against actual PCB copper area and airflow in the target application.
Is this MOSFET suitable for 3.3 V gate drive?
No - the gate threshold voltage range is 1.2–2.2 V, but full enhancement requires ≥4.5 V to achieve RDS(on) ≤6.7 mΩ. At 3.3 V, RDS(on) exceeds 12 mΩ, increasing conduction loss beyond acceptable levels for high-current applications.
Does the device include integrated ESD protection?
Yes - the IRFHM8326TRPBF incorporates on-chip gate protection diodes rated for ±20 V, meeting HBM ESD Class 1C (≥2 kV) per JESD22-A114. No external gate Zener is required for standard handling and PCB-level transient suppression.
What is the recommended PCB layout for thermal performance?
Infineon recommends a minimum 200 mm² exposed copper pad connected to ≥4 internal ground planes via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). Application Note AN-1136 provides verified footprint and stencil guidelines for optimal solder joint reliability and thermal transfer.
IRFHM8326TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2496 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 37W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
IRFHM8326TRPBF FAQ
1.How can I place an order for IRFHM8326TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFHM8326TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFHM8326TRPBF reliable?
The price and inventory of IRFHM8326TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM8326TRPBF is usually 5 days.
3.What payment methods are accepted for IRFHM8326TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM8326TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFHM8326TRPBF?
IRFHM8326TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFHM8326TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFHM8326TRPBF?
For technical support, including IRFHM8326TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM8326TRPBF requirements.
6.How does Aetrix verify that IRFHM8326TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFHM8326TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM8326TRPBF meets industry standards.
7.What is the process for return or replacement of IRFHM8326TRPBF?
All IRFHM8326TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM8326TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFHM8326TRPBF part is unused and in its original packaging.
Return procedure for IRFHM8326TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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