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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM8329TRPBF

Name: IRFHM8329TRPBF
Brand: Infineon Technologies
SKU: IRFHM8329TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM8329TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFHM8329TRPBF.pdf

Description:: MOSFET N-CH 30V 16A/57A PQFN

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Product details

Overview

IRFHM8329TRPBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 24 A N-channel PQFN-packaged Power MOSFET optimized for high-efficiency synchronous buck converter topologies and load switching in space-constrained notebook PC battery management systems. It delivers R_DS(on) of 4.8 mΩ @ V_GS = 10 V and 6.8 mΩ @ V_GS = 4.5 V, with 13 nC typical gate charge and low-profile 1.05 mm height.

For engineers reviewing the IRFHM8329TRPBF datasheet, IRFHM8329TRPBF pinout, IRFHM8329TRPBF application, or IRFHM8329TRPBF equivalent, key selection criteria include thermal resistance to PCB (<3.8 °C/W), MSL1 qualification, industry-standard pinout compatibility, and body diode recovery performance (t_rr = 13 ns, Q_rr = 8.1 nC) in high-frequency switching.

Technical Context

This device is a single N-channel enhancement-mode MOSFET fabricated using HEXFET® process technology. Its low R_DS(on) and gate charge support high-efficiency operation at switching frequencies up to 1 MHz in DC-DC converters, while its PQFN 3.3 × 3.3 mm package enables direct thermal coupling to the PCB via exposed drain pad.

The MOSFET features a gate threshold voltage of 1.7 V (typical), ±20 V maximum gate-source voltage rating, and robust avalanche capability (E_AS = 43 mJ). Its body diode exhibits fast reverse recovery (t_rr = 13 ns) and low forward voltage (V_SD = 1.0 V @ I_S = 20 A), critical for synchronous rectification and bidirectional current handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage; suitable for 5–12 V input rail applications with margin
R_DS(on) @ V_GS = 10 V	4.8 mΩ (typ), 6.1 mΩ (max) - Enables <1 W conduction loss at 20 A continuous drain current
R_DS(on) @ V_GS = 4.5 V	6.8 mΩ (typ), 8.8 mΩ (max) - Supports logic-level drive in 3.3 V/5 V controller systems
Q_g (total)	13 nC (typ) - Reduces gate driver power loss and enables fast turn-on with low gate resistance
I_D @ T_C = 25°C	24 A - Continuous current rating defined at bottom-case temperature, validated for source-bonding reliability
R_θJC (bottom)	3.8 °C/W - Enables efficient heat transfer from junction to PCB copper, critical for compact thermal design
t_rr / Q_rr	13 ns / 8.1 nC - Minimizes switching loss and voltage overshoot during body diode commutation

Pinout & Package

PQFN 3.3 mm × 3.3 mm, 8-pin, thermally enhanced package with exposed drain pad on bottom surface. Pin 1 identifier marked by notch or dot; leads are lead-free and RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain	Four parallel drain terminals connected to internal die drain metallization and exposed bottom thermal pad
Pin 1 corner (notch-marked)	Reference marker	Ensures correct orientation during automated placement; aligns with standard JEDEC outline "C" footprint

Key Features

Feature	Design Value
Low thermal resistance to PCB	R_θJC(bottom) = 3.8 °C/W - Enables >30 W power dissipation with 1 oz copper and 2-layer thermal relief
Low profile package	Height ≤ 1.05 mm - Fits under ultra-thin heat sinks and enables stacked board architectures
Industry-standard pinout	8-pin PQFN "C" outline - Direct drop-in replacement for multiple vendors' 30 V, 20+ A MOSFETs
MSL1 qualification	Moisture Sensitivity Level 1 - No bake required before reflow; supports high-yield SMT assembly
RoHS & halogen-free	No Pb, Br, or Cl-based flame retardants - Complies with IPC-1752A and EU Directive 2011/65/EU

Applications

Charge/Discharge Switch for Notebook Battery

System Load Switch

Use Scenario: Bidirectional current control between battery pack and system bus during charge/discharge cycles in ultrabooks.

IC Role / Device Role / Timing Role: N-channel power switch operating in linear and saturated modes; body diode conducts reverse current during discharge.

Use Value: Low R_DS(on) minimizes voltage drop across switch (≤120 mV @ 20 A), preserving battery runtime; fast t_rr prevents shoot-through in dual-MOSFET configurations.

Use Scenario: Hot-swap and inrush current limiting for 5 V or 12 V system rails powering USB-C PD, SSDs, or display interfaces.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlled by GPIO or dedicated load switch IC.

Use Value: 24 A continuous rating supports peak loads up to 288 W; low Q_g enables fast enable/disable transitions (<100 ns) without external gate drivers.

Synchronous Rectifier in Buck Converter

High-Frequency DC-DC Converter Stage

Use Scenario: Bottom-side switch in 300 kHz–1 MHz multiphase buck regulators supplying CPU/GPU core voltage.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by complementary PWM signal with dead-time control.

Use Value: 4.8 mΩ R_DS(on) reduces conduction loss by >60% vs. 40 V Schottky; low C_oss (360 pF) limits switching loss at 1 MHz.

Use Scenario: Primary switch in point-of-load (POL) converters for FPGA, ASIC, or AI accelerator power domains.

IC Role / Device Role / Timing Role: High-efficiency main switching element with integrated thermal sensing via case temperature monitoring.

Use Value: R_θJC = 3.8 °C/W allows direct thermal coupling to heatsink or copper plane; MSL1 ensures reliability in high-volume automated assembly lines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 15.5 nC; same PQFN 3.3×3.3 mm package	Higher gate charge increases driver loss; identical thermal performance and pinout	Preferred when tighter R_DS(on) tolerance is required; slightly higher cost
DMTH3006LPS-13	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 12.5 nC; same footprint but different pin 1 marking convention	Lower gate charge improves switching efficiency; requires layout verification for pin 1 alignment	Optimal for new designs prioritizing gate drive efficiency; not recommended for direct replacement without layout check

Compared with SiR872DP-T1-GE3 and DMTH3006LPS-13, IRFHM8329TRPBF offers the lowest R_DS(on) at 4.8 mΩ and best thermal resistance (3.8 °C/W), making it ideal for thermally constrained, high-current synchronous rectification where conduction loss dominates total loss budget.

Availability

IRFHM8329TRPBF is available at Aetrix Electronics and suitable for notebook battery management, system load switching, and synchronous buck converter applications requiring stable component supply, high-reliability MSL1 packaging, and consistent thermal performance across production batches.

Supply support for IRFHM8329TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and security solutions. The company acquired International Rectifier in 2015, integrating HEXFET® MOSFET technology into its broad power portfolio.

This device belongs to Infineon's OptiMOS™ 5 family of low-voltage power MOSFETs, engineered specifically for high-efficiency DC-DC conversion in computing, consumer, and communications infrastructure where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for IRFHM8329TRPBF at 100°C case temperature?

The maximum continuous drain current is 36 A at T_C(bottom) = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating accounts for thermal derating and is validated for source-bonding technology; operation above this value risks bond wire failure or thermal runaway.

Does IRFHM8329TRPBF support 3.3 V gate drive in logic-level applications?

Yes - at V_GS = 4.5 V, R_DS(on) is 6.8 mΩ (typical), enabling reliable saturation with 3.3 V logic drivers when paired with appropriate gate resistor selection. Gate threshold voltage is 1.7 V (typical), ensuring full enhancement well within 3.3 V logic swing.

How is thermal performance validated for PCB-mounted IRFHM8329TRPBF?

Thermal resistance R_θJC(bottom) = 3.8 °C/W is measured per JESD51-14 using a cold plate setup with soldered mounting to 2 oz copper on FR-4. Application Note AN-1136 provides footprint recommendations, including 12 mm² thermal pad area and 8 vias (0.3 mm diameter) to inner ground planes for optimal heat extraction.

Is IRFHM8329TRPBF suitable for avalanche-rated applications?

Yes - it is rated for single-pulse avalanche energy E_AS = 43 mJ at T_J = 25°C. This capability supports unclamped inductive switching in protection circuits, but repetitive avalanche operation is not guaranteed and must be validated per JEDEC JESD24-11 guidelines using the provided SOA curves.

IRFHM8329TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1710 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.6W (Ta), 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (3x3)

IRFHM8329TRPBF FAQ

1.How can I place an order for IRFHM8329TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM8329TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM8329TRPBF reliable?

The price and inventory of IRFHM8329TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM8329TRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM8329TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM8329TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM8329TRPBF?

IRFHM8329TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM8329TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM8329TRPBF?

For technical support, including IRFHM8329TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM8329TRPBF requirements.

6.How does Aetrix verify that IRFHM8329TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM8329TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM8329TRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM8329TRPBF?

All IRFHM8329TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM8329TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM8329TRPBF part is unused and in its original packaging.

Return procedure for IRFHM8329TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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