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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM8330TRPBF

Name: IRFHM8330TRPBF
Brand: Infineon Technologies
SKU: IRFHM8330TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM8330TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFHM8330TRPBF.pdf

Description:: MOSFET N-CH 30V 16A 8PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFHM8330TRPBF from Infineon Technologies is a 30 V, 25 A (T_C = 25°C), N-channel PQFN 3.3 mm × 3.3 mm Power MOSFET optimized for high-frequency synchronous buck converter control-side switching, featuring 6.6 mΩ R_DS(on) @ 10 V, 9.3 nC Q_g, and low thermal resistance (3.8°C/W junction-to-case via bottom side).

For engineers reviewing the IRFHM8330TRPBF datasheet, IRFHM8330TRPBF pinout, IRFHM8330TRPBF application, or IRFHM8330TRPBF equivalent, key selection criteria include gate charge minimization for 400 kHz switching, PCB thermal dissipation capability, and compatibility with standard surface-mount manufacturing processes in notebook battery charge/discharge and system load switch designs.

Technical Context

This device is a single N-channel enhancement-mode MOSFET designed for high-efficiency DC-DC conversion. Its low R_DS(on) (5.3 mΩ typ. @ 10 V) and fast switching parameters-9.2 ns t_d(on), 5.7 ns t_f, and 4.1 nC Q_sw-enable minimal conduction and switching losses in hard-switched topologies.

The PQFN package features exposed drain pads on both top and bottom, with thermal path engineered for direct PCB copper coupling. Junction-to-case thermal resistance is specified at ≤3.8°C/W (bottom), supporting high-current operation up to 35 A at T_C = 100°C without derating beyond linear limits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in notebook and industrial power supplies.
R_DS(on) max @ 10 V	6.6 mΩ - Enables <1.5 W conduction loss at 20 A continuous current, critical for thermally constrained 3.3 mm × 3.3 mm footprint layouts.
Q_g typical	9.3 nC - Low gate charge reduces driver power demand and supports efficient 400 kHz+ PWM operation with minimal gate drive loss.
I_D @ T_C = 25°C	25 A - Rated continuous drain current assuming direct case-to-PCB thermal interface; limited by source bonding technology per datasheet note.
R_θJC (Bottom)	≤3.8°C/W - Confirmed thermal path enables >30 W power dissipation capability when mounted on ≥2 oz Cu with thermal vias.
V_GS max	±20 V - Supports robust gate drive design with 12 V or 15 V logic-level controllers while tolerating overshoot during layout parasitics.
C_iss	1450 pF - Input capacitance value directly impacts gate drive loop stability and EMI filtering requirements in high-dV/dt applications.

Pinout & Package

PQFN 3.3 mm × 3.3 mm, 8-pin, dual-exposed-drain package (Outline "C"/"G") with bottom thermal pad and top-side drain connections. Pin 1 marked by notch or dot; leads are lead-free, RoHS-compliant, MSL1 rated.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Four parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt synchronous rectification paths.
5, 6, 7, 8	Drain	Top-side drain pins connect to internal die drain metallization and external PCB power plane; enable low-inductance high-current return path.
Center Pad (Bottom)	Drain (Thermal)	Exposed drain pad provides primary thermal conduction path to PCB; must be soldered to solid copper pour with ≥9 thermal vias for rated performance.
Pin 1 (Notch Side)	Gate	Single gate terminal located adjacent to source pins to minimize gate loop area and suppress ringing during fast switching transitions.

Key Features

Feature	Design Value
Low R_DS(on) with tight distribution	5.3 mΩ typical @ 10 V ensures consistent efficiency across production lots in high-volume notebook power stages.
Industry-standard pinout	Compatible with multiple vendors' 3.3×3.3 mm PQFN MOSFET footprints, enabling drop-in replacement without PCB redesign.
Low-profile package	Height <1.2 mm allows integration into ultra-thin consumer devices where Z-height is constrained by mechanical stack-up.
MSL1 qualification	Moisture sensitivity level 1 permits unlimited floor life and standard reflow without baking, reducing manufacturing overhead.
Halogen-free & RoHS	Complies with IPC-1752A material declaration requirements for global electronics compliance and end-of-life recycling.

Applications

Charge/Discharge Switch for Notebook PC Battery

System/Load Switch

Use Scenario: Bidirectional battery protection circuit managing charge current from AC adapter and discharge current to system load under dynamic power states.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by dedicated battery management IC to enable/disable main power path with <100 ns response.

Use Value: 6.6 mΩ R_DS(on) limits voltage drop to <165 mV at 25 A, preserving battery runtime and minimizing heat generation in sealed chassis.

Use Scenario: Hot-swap capable 5–24 V system rail isolation for peripheral modules requiring inrush current limiting and fault protection.

IC Role / Device Role / Timing Role: Load switch element driven by microcontroller GPIO or dedicated load switch controller to manage power sequencing and brown-out recovery.

Use Value: 9.3 nC Q_g enables clean turn-on/turn-off within 50 µs, preventing bus droop during hot-plug events in industrial I/O modules.

Control MOSFET in Synchronous Buck Converter

High-Frequency DC-DC Point-of-Load Regulator

Use Scenario: Upper switch in 400 kHz, 12 V → 1.2 V buck converter powering CPU core voltage in ultrabook platforms.

IC Role / Device Role / Timing Role: Fast-switching control FET operating in hard-switched mode with gate drive supplied by integrated controller's high-side driver.

Use Value: 4.1 nC Q_sw and 5.7 ns fall time minimize switching loss contribution to <12% of total converter loss at full load.

Use Scenario: Compact 12 V → 3.3 V regulator on FPGA carrier board with strict EMI and thermal envelope constraints.

IC Role / Device Role / Timing Role: Primary switching transistor in discrete buck stage where layout area and height are limited to <100 mm² and 1.2 mm respectively.

Use Value: PQFN 3.3×3.3 mm footprint with bottom thermal pad achieves 33 W power dissipation in 100 mm² area, eliminating need for external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 5.1 mΩ @ 10 V; Q_g = 11.5 nC; same PQFN 3.3×3.3 mm package	Slightly lower conduction loss but higher gate charge increases driver loss at >500 kHz	Preferred for fixed 12 V→1.0 V VRMs where conduction dominates; less optimal for variable-frequency adaptive converters.
DMN3029LSD-13	R_DS(on) = 7.2 mΩ @ 10 V; Q_g = 7.8 nC; SO-8 package (larger footprint, higher R_θJA)	Lower gate charge improves light-load efficiency but SO-8 thermal resistance limits sustained >15 A operation	Best suited for cost-sensitive industrial controls where PCB space is available and peak current <18 A.

Compared with SiR872DP-T1-GE3 and DMN3029LSD-13, IRFHM8330TRPBF delivers optimal balance of low R_DS(on), moderate Q_g, and superior thermal performance in minimal area-making it the preferred choice for thermally dense, high-frequency notebook and portable power systems.

Availability

IRFHM8330TRPBF is available at Aetrix Electronics and suitable for notebook battery management, system load switching, and synchronous buck converter control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFHM8330TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained portable and computing applications.

FAQ

What is the maximum continuous drain current rating for IRFHM8330TRPBF at 100°C case temperature?

The datasheet specifies 35 A continuous drain current at T_C = 100°C with V_GS = 10 V. This rating assumes proper PCB thermal design with ≥2 oz copper and ≥9 thermal vias under the exposed drain pad. Operation above this current requires pulse-width limitation or active cooling per SOA curves in Figure 8.

Does IRFHM8330TRPBF support 4.5 V gate drive in logic-level applications?

Yes-it is fully characterized at V_GS = 4.5 V, delivering R_DS(on) ≤9.9 mΩ and supporting 16 A continuous current at ambient temperature. Gate threshold voltage is 1.35–2.35 V, ensuring reliable turn-on with standard 3.3 V or 5 V logic drivers without level-shifting.

How does the dual-exposed-drain PQFN package improve thermal performance over standard SO-8?

The PQFN's bottom thermal pad provides a direct junction-to-PCB path with R_θJC ≤3.8°C/W, versus >60°C/W for SO-8's junction-to-ambient path. Combined with top-side drain pins, it reduces total thermal resistance by >75%, enabling >3× higher power density in the same footprint.

Can IRFHM8330TRPBF be used in avalanche-prone unclamped inductive switching circuits?

Yes-the device is rated for 42 mJ single-pulse avalanche energy (E_AS). However, repetitive avalanche operation is not recommended. Layout must minimize stray inductance, and gate drive must ensure fast, clean turn-off to avoid secondary breakdown during inductive flyback events.

IRFHM8330TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta), 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (3.3x3.3), Power33

IRFHM8330TRPBF FAQ

1.How can I place an order for IRFHM8330TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM8330TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM8330TRPBF reliable?

The price and inventory of IRFHM8330TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM8330TRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM8330TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM8330TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM8330TRPBF?

IRFHM8330TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM8330TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM8330TRPBF?

For technical support, including IRFHM8330TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM8330TRPBF requirements.

6.How does Aetrix verify that IRFHM8330TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM8330TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM8330TRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM8330TRPBF?

All IRFHM8330TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM8330TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM8330TRPBF part is unused and in its original packaging.

Return procedure for IRFHM8330TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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