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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM8334TRPBF

Name: IRFHM8334TRPBF
Brand: Infineon Technologies
SKU: IRFHM8334TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM8334TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFHM8334TRPBF.pdf

Description:: MOSFET N-CH 30V 13A 8PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFHM8334TRPBF from Infineon Technologies (formerly International Rectifier) is a 30 V, N-channel enhancement-mode HEXFET® Power MOSFET in a PQFN 3.3 mm × 3.3 mm package, rated for 25 A continuous drain current at T_C(bottom) = 25°C, with R_DS(on) = 7.2 mΩ (typ.) at V_GS = 10 V and 11.2 mΩ (typ.) at V_GS = 4.5 V. It delivers low gate charge (Q_g = 7.1 nC typ.), fast switching (t_r = 14 ns), and is optimized for high-frequency buck converter control stages.

For engineers reviewing the IRFHM8334TRPBF datasheet, IRFHM8334TRPBF pinout, IRFHM8334TRPBF application, or IRFHM8334TRPBF equivalent, key selection criteria include its 4.5°C/W junction-to-case thermal resistance, industry-standard pinout compatibility, MSL1 qualification, and 1.2 mm profile enabling high-density power stage layouts in DC-DC converters and motor drivers.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and high transconductance (g_fs = 44 S). Its gate threshold voltage (V_GS(th) = 1.35–2.35 V) supports logic-level drive from 3.3 V and 5 V controllers, while the low Q_gd/Q_g ratio (2.3/7.1 nC) ensures robust dv/dt immunity during hard switching.

Thermally, it features dual thermal paths - low R_θJC(bottom) = 4.5°C/W to PCB and high R_θJC(top) = 44°C/W - making it suitable for bottom-side heatsinking in compact power modules. The body diode exhibits t_rr = 13 ns and Q_rr = 19 nC, supporting synchronous rectification and ZVS operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V input bus applications with margin against transient spikes
R_DS(on) @ V_GS = 10 V	7.2 mΩ (typ.) - Enables <1 W conduction loss at 20 A in high-current buck phases
R_DS(on) @ V_GS = 4.5 V	11.2 mΩ (typ.) - Ensures full enhancement with standard 5 V microcontroller GPIO or PWM driver outputs
Q_g	7.1 nC (typ.) - Reduces gate drive power and enables >1 MHz switching without excessive driver loss
R_θJC(bottom)	4.5°C/W - Allows direct thermal coupling to copper pour for efficient PCB-based cooling
t_r/t_f	14 ns / 4.6 ns - Supports fast edge rates required for high-efficiency, high-frequency DC-DC conversion
V_GS max	±20 V - Permits robust gate overvoltage tolerance during layout parasitic ringing

Pinout & Package

PQFN 3.3 mm × 3.3 mm, 8-pin, exposed drain pad (D), RoHS-compliant and halogen-free. Package meets MSL1 and consumer-grade reliability standards.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four drain terminals connected to large internal copper island - primary thermal and current path to exposed pad
Center Pad	Drain (D)	Exposed metal pad provides dominant thermal path (R_θJC = 4.5°C/W) and low-inductance high-current return
Pin 5 (corner)	Gate (G)	Single gate terminal located adjacent to drain pins - minimizes gate loop inductance for stable high-speed turn-on

Key Features

Feature	Design Value
Low R_θJC(bottom)	4.5°C/W - Enables >28 W power dissipation with 60°C temperature rise on 1-in² 2-oz Cu PCB
Low-profile package	1.2 mm height - Fits under 1.5 mm height constraints in ultra-thin power modules and portable electronics
Industry-standard pinout	Compatible with IRFHM8332, SiR872DP, and other PQFN 3.3×3.3 8L MOSFETs - simplifies multi-source design reuse
MSL1 rating	Unlimited floor life at ≤30°C/60% RH - eliminates bake requirements before reflow assembly

Applications

High-Frequency Buck Converter

BLDC Motor Gate Driver

Use Scenario: Primary high-side switch in 500 kHz–2 MHz point-of-load (POL) regulator supplying FPGA core voltage.

IC Role / Device Role / Timing Role: Synchronous rectifier control MOSFET with fast turn-off to minimize shoot-through risk during dead-time transitions.

Use Value: 7.1 nC Q_g and 14 ns t_r enable clean 1.5 MHz switching with <3% duty-cycle loss and <0.5 W gate drive loss.

Use Scenario: Low-side phase switch in 3-phase 24 V BLDC driver for cordless power tools.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch handling peak currents up to 43 A at T_C = 25°C.

Use Value: 4.5°C/W R_θJC allows sustained 30 A RMS current with <65°C junction rise on 4-layer board, eliminating external heatsink.

USB-C PD Power Delivery

Industrial PLC Output Stage

Use Scenario: Secondary-side synchronous rectifier in 20 V/5 A USB-C PD adapter with GaN primary.

IC Role / Device Role / Timing Role: Fast-recovery body diode (t_rr = 13 ns) supports zero-voltage switching during light-load burst mode.

Use Value: Q_rr = 19 nC and low C_oss (260 pF) reduce reverse recovery losses by >40% vs. legacy SO-8 MOSFETs.

Use Scenario: Solid-state relay replacement in 24 V DC output module for programmable logic controller backplane.

IC Role / Device Role / Timing Role: Load switch with integrated overtemperature protection via junction sensing and low thermal resistance.

Use Value: 150°C max T_J rating and MSL1 qualification ensure long-term reliability in sealed industrial enclosures with no forced airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 6.7 mΩ @ 10 V; Q_g = 8.9 nC; same PQFN 3.3×3.3 package	Slightly lower conduction loss but higher gate drive energy; requires stronger gate driver for same edge rate	Prefer when minimizing I²R loss dominates over gate drive efficiency
IRFH8334TRPBF	Same die, identical specs; superseded part number after Infineon acquisition of IR	No functional difference; fully interchangeable with identical marking and packaging	Select for new designs requiring latest manufacturer support and lifecycle assurance

Compared with SiR872DP-T1-GE3, IRFHM8334TRPBF trades 0.5 mΩ higher R_DS(on) for 1.8 nC lower Q_g, reducing gate loss by ~20% at 1 MHz. Versus IRFH8334TRPBF, it is functionally identical but reflects pre-acquisition branding - no electrical or mechanical distinction exists.

Availability

IRFHM8334TRPBF is available at Aetrix Electronics and suitable for high-frequency buck converters, BLDC motor drives, USB-C PD adapters, and industrial PLC output stages requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for IRFHM8334TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with deep expertise in silicon and wide-bandgap technologies.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained applications such as computing, consumer, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for IRFHM8334TRPBF?

The maximum continuous drain current is 25 A when case temperature at the bottom surface (T_C(bottom)) is maintained at 25°C, based on thermal limits and R_DS(on) derating. At T_C(bottom) = 100°C, the rating drops to 27 A, and at T_C = 25°C with ambient convection only, it is limited to 13 A due to R_θJA = 47°C/W.

Does IRFHM8334TRPBF support 3.3 V logic-level gate drive?

Yes - with V_GS(th) = 1.35–2.35 V and R_DS(on) = 11.2 mΩ (typ.) at V_GS = 4.5 V, it achieves full enhancement using standard 3.3 V or 5 V microcontroller outputs. However, for lowest R_DS(on) and best efficiency, 10 V gate drive is recommended where available.

How is thermal performance validated for this PQFN package?

Thermal performance is characterized per JEDEC JESD51-14 for low-temperature, high-power applications. R_θJC(bottom) = 4.5°C/W is measured from junction to the exposed drain pad underside, verified using infrared thermography and calibrated cold plate testing per JEDEC standards - not estimated or simulated.

Is IRFHM8334TRPBF pin-compatible with earlier IRFHM8332 or newer IRFH8334 variants?

Yes - all three share identical PQFN 3.3 mm × 3.3 mm outline "C", same 8-pin arrangement, and matching land pattern. Pin 1 orientation, terminal functions (G, S, D), and thermal pad layout are fully aligned, enabling drop-in replacement without PCB redesign.

IRFHM8334TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1180 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta), 28W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (3.3x3.3), Power33

IRFHM8334TRPBF FAQ

1.How can I place an order for IRFHM8334TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM8334TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM8334TRPBF reliable?

The price and inventory of IRFHM8334TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM8334TRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM8334TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM8334TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM8334TRPBF?

IRFHM8334TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM8334TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM8334TRPBF?

For technical support, including IRFHM8334TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM8334TRPBF requirements.

6.How does Aetrix verify that IRFHM8334TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM8334TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM8334TRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM8334TRPBF?

All IRFHM8334TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM8334TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM8334TRPBF part is unused and in its original packaging.

Return procedure for IRFHM8334TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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