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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM8337TRPBF

Name: IRFHM8337TRPBF
Brand: Infineon Technologies
SKU: IRFHM8337TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM8337TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFHM8337TRPBF.pdf

Description:: MOSFET N-CH 30V 12A 8PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFHM8337TRPBF from Infineon Technologies is a 30 V, 18 A (T_C = 25°C), N-channel PQFN 3.3 mm × 3.3 mm HEXFET® Power MOSFET optimized for high-efficiency synchronous buck converters and battery protection switches. It delivers R_DS(on) of 9.4 mΩ @ V_GS = 10 V and 14.5 mΩ @ V_GS = 4.5 V, with 5.4 nC total gate charge and low thermal resistance (<5.0 °C/W to PCB).

For engineers reviewing the IRFHM8337TRPBF datasheet, IRFHM8337TRPBF pinout, IRFHM8337TRPBF application, or IRFHM8337TRPBF equivalent, key selection criteria include its 1.05 mm profile for space-constrained DC/DC modules, MSL1 rating for reflow compatibility, and body diode recovery performance (t_rr = 20–30 ns) in high-frequency switching.

Technical Context

This MOSFET employs trench-gate silicon technology with source-bonding to support continuous 35 A drain current at T_C(bottom) = 25°C. Its gate threshold voltage (1.35–2.35 V) enables robust 4.5 V logic-level drive, while low C_iss (755 pF) and C_rss (83 pF) reduce switching losses in 400 kHz+ buck topologies.

The device integrates a fast-recovery body diode (V_SD ≤ 1.0 V @ I_S = 9.4 A, t_rr ≤ 30 ns) and supports unclamped inductive switching with 13 mJ single-pulse avalanche energy. Thermal design leverages bottom-side copper pad for direct PCB heat transfer, achieving R_θJC(bottom) = 5.0 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V input rail systems with margin
R_DS(on) @ 10 V	9.4 mΩ typ - Enables <1 W conduction loss at 12 A in high-current load switches
R_DS(on) @ 4.5 V	14.5 mΩ typ - Supports direct drive from 3.3 V/5 V microcontrollers without level shifters
Q_g	5.4 nC typ - Reduces gate driver power demand and switching transition time
I_D @ T_C = 25°C	35 A - Sustains high pulsed loads in battery discharge paths with minimal derating
R_θJC(bottom)	<5.0 °C/W - Allows direct thermal coupling to inner-layer copper planes for compact thermal design
t_rr	20–30 ns - Limits reverse recovery loss and EMI during synchronous rectification

Pinout & Package

PQFN 3.3 mm × 3.3 mm package with exposed thermal pad on bottom side; 8-pin layout per Outline "C" mechanical drawing. Pin 1 marked by notch or dot; pins arranged in two rows (1–4 top, 5–8 bottom).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (internally paralleled)	All eight pins connect to internal drain metallization - primary current path and thermal conduction path to PCB
Source (pins 1–4 top row + pins 5–8 bottom row)	Source (common connection)	Top-row pins 1–4 and bottom-row pins 5–8 are electrically tied to source - forms low-inductance source loop with adjacent ground plane
Gate (pin 3 only)	Control terminal	Single dedicated gate pin (pin 3) minimizes gate loop inductance and improves switching stability
Thermal pad (underside)	Junction-to-PCB thermal interface	Exposed copper pad soldered to PCB thermal plane - accounts for >90% of heat removal in typical layout

Key Features

Feature	Design Value
Low-profile PQFN package	Height <1.05 mm - fits under 1.2 mm height constraints in ultra-thin portable electronics
Industry-standard pinout	Compatible with common 3.3×3.3 mm MOSFET footprints - enables multi-source board reuse
MSL1 moisture sensitivity	Reflow-compatible without baking - reduces manufacturing overhead for high-volume SMT lines
RoHS-compliant & halogen-free	Meets IPC-J-STD-609 Class 1 - satisfies environmental compliance for global consumer and industrial shipments
Low R_θJA (<31 °C/W, <10 s)	Enables >2.5 W dissipation in short-duration pulse applications without heatsink

Applications

Battery Protection Circuit

Synchronous Buck Converter

Use Scenario: Bidirectional overcurrent and short-circuit protection in Li-ion battery packs with integrated fuel gauges.

IC Role / Device Role / Timing Role: High-side load switch controlling main battery discharge path; operates in linear mode during fault detection and hard-switches during normal operation.

Use Value: 17.9 mΩ R_DS(on) @ 4.5 V ensures <100 mW loss at 7.5 A pack current, extending runtime while enabling fast trip response via low Q_g.

Use Scenario: Lower-side synchronous rectifier in 12 V → 1.2 V/20 A point-of-load converter for server CPU VRMs.

IC Role / Device Role / Timing Role: Fast-turning-on power switch replacing Schottky diode; driven by dedicated gate controller with 4.5 V output.

Use Value: 20–30 ns t_rr and 14.5 mΩ R_DS(on) @ 4.5 V cut conduction + recovery losses by >35% vs. discrete diode solution at 400 kHz.

USB-C Power Delivery Switch

Industrial PLC I/O Module

Use Scenario: 20 V-rated bidirectional power path switch supporting USB PD 3.0 programmable power supply negotiation.

IC Role / Device Role / Timing Role: Dual-function switch managing both sourcing and sinking modes; controlled by PD controller via GPIO.

Use Value: 30 V V_DSS with 12.4 mΩ R_DS(on) @ 10 V allows safe 20 V operation with <250 mW loss at 10 A, meeting USB PD thermal limits.

Use Scenario: Solid-state relay replacement in 24 V DC digital output modules requiring >100 k-cycle lifetime.

IC Role / Device Role / Timing Role: Low-side switching element driving solenoids and indicator LEDs; operated in on/off mode with PWM dimming capability.

Use Value: MSL1 rating and 150 °C T_J(max) ensure reliability across extended temperature cycles in uncooled enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 8.5 mΩ @ 10 V; higher Q_g (10.2 nC); PQFN 5×6 mm	Larger footprint; better conduction but slower switching in high-frequency designs	Prefer when thermal budget dominates over switching speed and board area is available
DMN3025LFG-7	R_DS(on) = 2.5 mΩ @ 10 V; 30 V rating; smaller 2×2 mm package; Q_g = 4.8 nC	Lower R_DS(on) but reduced current rating (12 A); tighter layout constraints	Choose for ultra-compact 5 V logic-driven switches where peak current ≤12 A

Compared with SiR872DP-T1-GE3 and DMN3025LFG-7, IRFHM8337TRPBF offers optimal balance of 35 A current capability, 5.4 nC gate charge, and 3.3×3.3 mm footprint-making it ideal for space-limited, medium-power synchronous buck and battery protection designs requiring both efficiency and manufacturability.

Availability

IRFHM8337TRPBF is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial PLC I/O circuits requiring stable component supply, RoHS compliance, and MSL1 reflow readiness.

Supply support for IRFHM8337TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency DC/DC conversion, battery protection, and solid-state switching in consumer, computing, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFHM8337TRPBF supports 22 A continuous drain current at T_C(bottom) = 100°C, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB copper area for thermal conduction and accounts for R_DS(on) increase with junction temperature.

Does this MOSFET require a gate resistor for stable switching?

A gate resistor (typically 1–10 Ω) is recommended to dampen ringing and control dV/dt during turn-on/turn-off. The datasheet specifies switching times measured with R_G = 1.3 Ω; omitting it may cause oscillation due to low gate impedance and parasitic inductance in high-speed layouts.

Can IRFHM8337TRPBF be used in avalanche mode?

Yes-it is rated for 13 mJ single-pulse avalanche energy at T_J = 25°C. However, repetitive avalanche operation is not guaranteed and requires careful circuit design, including snubbers and current limiting, to avoid cumulative junction damage.

Is the thermal pad electrically isolated from other terminals?

No-the exposed thermal pad is internally connected to the drain. It must be soldered to a PCB drain-copper pour and cannot be used as a separate thermal or electrical node. Layout guidelines in AN-1136 confirm this connection and recommend full-solder coverage for optimal thermal performance.

IRFHM8337TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.4mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 8.1 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 755 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (3.3x3.3), Power33

IRFHM8337TRPBF FAQ

1.How can I place an order for IRFHM8337TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM8337TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM8337TRPBF reliable?

The price and inventory of IRFHM8337TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM8337TRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM8337TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM8337TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM8337TRPBF?

IRFHM8337TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM8337TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM8337TRPBF?

For technical support, including IRFHM8337TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM8337TRPBF requirements.

6.How does Aetrix verify that IRFHM8337TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM8337TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM8337TRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM8337TRPBF?

All IRFHM8337TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM8337TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM8337TRPBF part is unused and in its original packaging.

Return procedure for IRFHM8337TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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