My Inquiry
My Account
Infineon Technologies IRFHM8342TRPBF
- Part No.:
- IRFHM8342TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IRFHM8342TRPBF.pdf
- Description:
- MOSFET N-CH 30V 10A 8PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,721
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFHM8342TRPBF from Infineon Technologies is a 30 V, 20 A (TC = 25°C), N-channel enhancement-mode HEXFET® Power MOSFET in a 3.3 mm × 3.3 mm PQFN package with exposed drain pad. It delivers RDS(on) of 13 mΩ (typ) at VGS = 10 V and 20 mΩ (typ) at VGS = 4.5 V, features 5.0 nC total gate charge, and is optimized as the control FET in high-frequency synchronous buck converters.
For engineers reviewing the IRFHM8342TRPBF datasheet, IRFHM8342TRPBF pinout, IRFHM8342TRPBF application, or IRFHM8342TRPBF equivalent, key selection criteria include low Qg for reduced switching loss, low RθJC (<6.2°C/W) for PCB thermal coupling, industry-standard pinout compatibility, and validated performance in 400 kHz buck topologies with tight layout constraints.
Technical Context
This MOSFET operates as the high-side switch in synchronous buck regulators, where fast turn-on/turn-off dynamics (td(on) = 8.1 ns, tf = 5.6 ns) and low output capacitance (Coss = 102 pF) minimize switching losses and voltage ringing under high di/dt conditions. Its gate threshold voltage (VGS(th) = 1.35–2.35 V) supports robust 4.5 V logic-level drive.
The device integrates a low-loss body diode (VSD = 1.0 V at IS = 17 A, trr = 9.4 ns) and withstands unclamped inductive switching with EAS = 21 mJ. Thermal design leverages the bottom-side thermal pad and <6.2°C/W junction-to-case (bottom) resistance for direct PCB copper conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V input bus systems and 12 V intermediate rails. |
| RDS(on) @ VGS = 10 V | 13 mΩ (typ) - Enables ≤260 mW conduction loss at 20 A DC current, critical for high-efficiency power stages. |
| RDS(on) @ VGS = 4.5 V | 20 mΩ (typ) - Ensures stable on-state operation with standard 5 V or 4.5 V gate drivers without level-shifting. |
| Qg | 5.0 nC (typ) - Reduces gate drive power and enables efficient 400 kHz+ switching in compact buck converters. |
| RθJC (Bottom) | <6.2°C/W - Allows direct thermal transfer to PCB ground plane, supporting >20 W continuous dissipation with proper copper area. |
| ID @ TC = 25°C | 20 A - Rated continuous drain current with source bonding technology, defining safe operating area under case-cooled conditions. |
| Ciss/Coss/Crss | 560 / 102 / 48 pF - Low reverse transfer capacitance minimizes Miller-induced shoot-through risk in synchronous rectification. |
Pinout & Package
Package: PQFN 3.3 mm × 3.3 mm with exposed drain pad (Outline "C" per Infineon documentation). Bottom thermal pad must be soldered to PCB copper for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals - reduce source inductance and improve current sharing in high-di/dt paths. |
| 5, 6, 7, 8 | Drain (D) | Exposed drain pad + four perimeter drain terminals - provides low-inductance, high-current return path and primary thermal conduction path to PCB. |
| Center Pad (Bottom) | Drain (D) | Large-area exposed copper pad - accounts for >90% of thermal conduction and >70% of current-carrying capacity. |
| Gate (G) | Gate (G) | Single terminal (pin #1 labeled) - designed for low-impedance gate loop routing to minimize oscillation during hard switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge (Qg = 5.0 nC) | Reduces gate driver power consumption and enables faster switching transitions without excessive drive strength. |
| Low RθJC (bottom) <6.2°C/W | Permits direct thermal coupling to PCB, eliminating need for heatsinks in space-constrained 20 W power stages. |
| Low profile (<0.9 mm height) | Supports ultra-thin end equipment designs such as portable SSDs, thin client PSUs, and stacked module architectures. |
| Industry-standard pinout | Ensures drop-in replacement capability across multiple vendors' 3.3×3.3 mm PQFN power MOSFETs without layout revision. |
| MSL1 rating and RoHS/halogen-free | Enables single-reflow assembly and meets consumer-grade reliability and environmental compliance requirements. |
Applications
| DC-DC Synchronous Buck Converter | Load Switch for 5–24 V Rails |
|---|---|
|
Use Scenario: Primary high-side switch in 400 kHz, 12 V input → 1.2 V/20 A output VRM for CPU/GPU core power delivery. IC Role / Device Role / Timing Role: Control MOSFET handling full input voltage swing and high di/dt switching; gate driven by integrated PWM controller. Use Value: Low Qg and Crss suppress Miller-induced false turn-on, while low RDS(on) maintains >92% efficiency at full load. |
Use Scenario: Hot-swap and inrush-controlled power enable for PCIe add-in cards or USB-C PD sink circuits. IC Role / Device Role / Timing Role: Single N-channel load switch with external gate resistor for controlled slew rate and fault current limiting. Use Value: 30 V rating accommodates 24 V industrial buses; low RDS(on) limits voltage drop to <0.5 V at 15 A, minimizing self-heating. |
| Point-of-Load (POL) Regulator | Motor Drive Half-Bridge High-Side |
|
Use Scenario: Compact 3.3 V/10 A POL module on FPGA or ASIC carrier boards requiring minimal footprint and high transient response. IC Role / Device Role / Timing Role: Fast-switching control FET paired with low-VF synchronous rectifier; operates in continuous conduction mode. Use Value: 0.9 mm profile allows stacking with inductor; low Ciss ensures stable gate drive under high-frequency PWM with minimal snubbing. |
Use Scenario: High-side switch in 24 V BLDC motor gate driver IC reference design for small appliances and power tools. IC Role / Device Role / Timing Role: N-channel high-side switch driven via bootstrap circuit; body diode conducts freewheeling current during low-side conduction. Use Value: Fast trr (9.4 ns) and low Qrr (5.8 nC) minimize commutation loss and prevent cross-conduction in half-bridge dead-time intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 (Vishay) | RDS(on) = 14.5 mΩ @ 10 V; Qg = 6.5 nC; same PQFN 3.3×3.3 package but higher gate charge. | Marginally higher switching loss at 400 kHz; identical thermal pad layout enables board reuse. | Select when gate drive strength exceeds 1 A peak and layout cannot accommodate additional gate resistance. |
| DMN3025LFG-7 (Diodes Inc.) | RDS(on) = 2.5 mΩ @ 10 V (lower), but rated only for 30 V/16 A; no MSL1 rating; different pinout (G-D-S-D). | Not suitable for 20 A continuous operation; incompatible pinout requires PCB redesign. | Consider only for lower-current (≤12 A), cost-sensitive applications where thermal margin is abundant. |
Compared with SiR872DP-T1-GE3 and DMN3025LFG-7, the IRFHM8342TRPBF offers the best balance of verified 20 A continuous current capability, MSL1 manufacturability, and 5.0 nC gate charge-making it uniquely suited for production-grade 400 kHz synchronous buck converters requiring zero-layout-change upgrades.
Availability
IRFHM8342TRPBF is available at Aetrix Electronics and suitable for synchronous buck converters, hot-swap load switches, point-of-load regulators, and BLDC motor half-bridge drivers requiring stable component supply, consistent parametric performance, and long-term industrial availability.
Supply support for IRFHM8342TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space- and thermally-constrained applications such as computing VRMs and portable power systems.
FAQ
What is the maximum continuous drain current for IRFHM8342TRPBF at 100°C case temperature?
The maximum continuous drain current is 18 A at TC = 100°C and VGS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PQFN package and PCB copper area; actual usable current depends on measured junction temperature and layout thermal resistance.
Does IRFHM8342TRPBF require a gate resistor for stability in 400 kHz buck operation?
Yes-a 2.2 Ω to 4.7 Ω gate resistor is recommended to dampen gate ringing and prevent parasitic oscillation, especially given its low input capacitance (Ciss = 560 pF) and fast switching edges. Layout must minimize gate loop inductance by routing gate traces directly from driver output to pin #1 with adjacent ground return.
Can IRFHM8342TRPBF be used in avalanche-rated applications?
Yes-it is characterized for unclamped inductive switching with EAS = 21 mJ at TJ = 25°C. However, avalanche operation is not intended for continuous use; it serves only as a ruggedness safeguard during fault conditions like output short-circuit or layout-induced voltage overshoot.
Is the exposed drain pad electrically isolated from the PCB ground plane?
No-the exposed drain pad is electrically connected to the drain terminals (pins 5–8) and must be soldered to a dedicated, non-grounded copper pour tied to the high-side switch node. Connecting it to ground would create a short circuit between drain and source through the PCB substrate.
IRFHM8342TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.5 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 560 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.6W (Ta), 20W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (3.3x3.3), Power33
IRFHM8342TRPBF FAQ
1.How can I place an order for IRFHM8342TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFHM8342TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFHM8342TRPBF reliable?
The price and inventory of IRFHM8342TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM8342TRPBF is usually 5 days.
3.What payment methods are accepted for IRFHM8342TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM8342TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFHM8342TRPBF?
IRFHM8342TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFHM8342TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFHM8342TRPBF?
For technical support, including IRFHM8342TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM8342TRPBF requirements.
6.How does Aetrix verify that IRFHM8342TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFHM8342TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM8342TRPBF meets industry standards.
7.What is the process for return or replacement of IRFHM8342TRPBF?
All IRFHM8342TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM8342TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFHM8342TRPBF part is unused and in its original packaging.
Return procedure for IRFHM8342TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFHM8342TRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
