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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM9391TRPBF

Name: IRFHM9391TRPBF
Brand: Infineon Technologies
SKU: IRFHM9391TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHM9391TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFHM9391TRPBF.pdf

Description:: MOSFET P-CH 30V 11A 8PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:5,704

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Product details

Overview

IRFHM9391TRPBF from Infineon Technologies (formerly International Rectifier) is a -30 V, -11 A P-channel enhancement-mode HEXFET® Power MOSFET in a 3.3 mm × 3.3 mm PQFN package with exposed drain pad. It delivers R_DS(on) of 14.6 mΩ @ V_GS = -10 V and 22.5 mΩ @ V_GS = -4.5 V, features 32 nC total gate charge, and is optimized for low-side load switching in battery-powered portable electronics.

For engineers reviewing the IRFHM9391TRPBF datasheet, IRFHM9391TRPBF pinout, IRFHM9391TRPBF application, or IRFHM9391TRPBF equivalent, key selection criteria include verified R_DS(on) at logic-level gate drive (-4.5 V), thermal resistance to PCB (<3.8 °C/W), MSL1 qualification, and industry-standard pinout compatibility across multi-vendor designs.

Technical Context

This P-channel MOSFET operates as a low-side switch in DC power path control, where gate drive is referenced to system ground and source connects to the positive rail. Its negative V_GS(th) (-1.3 to -2.4 V) ensures reliable turn-on with standard logic-level signals, and its low Q_g (32 nC typ.) enables fast switching with minimal driver loss.

The device integrates a robust body diode (V_SD = -1.2 V @ I_S = -2.8 A) with 64–96 ns reverse recovery time and supports unclamped inductive switching up to 75 mJ single-pulse avalanche energy, making it suitable for transient-tolerant load disconnect and battery protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-30 V - Maximum drain-to-source blocking voltage; defines safe operating range in 12 V/24 V battery systems.
R_DS(on) @ V_GS = -10 V	14.6 mΩ - Confirmed on-resistance at full gate drive; determines conduction loss in high-current load switch applications.
R_DS(on) @ V_GS = -4.5 V	22.5 mΩ - Verified on-resistance at logic-level drive; critical for battery-powered microcontroller-controlled switches.
Q_g (typ.)	32 nC - Total gate charge required for full turn-on; directly impacts switching loss and driver sizing.
I_D @ T_A = 25°C	-11 A - Continuous drain current rating at ambient temperature; sets maximum steady-state load capability without heatsinking.
R_θJC (Bottom)	<3.8 °C/W - Junction-to-case thermal resistance via exposed drain pad; enables direct PCB copper thermal transfer for compact layouts.
V_GS(th)	-1.8 V (typ.) - Gate threshold voltage; ensures turn-on with common 3.3 V or 5 V GPIO outputs.

Pinout & Package

IRFHM9391TRPBF uses a thermally enhanced 8-pin PQFN (3.3 mm × 3.3 mm, 1.05 mm max height) with an exposed drain pad (Pin 5) on the bottom surface. The top-side pin numbering follows standard industry orientation with Pin 1 marked by a dot or notch.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching.
5	Drain (D) - Exposed Pad	Primary thermal and electrical connection point; must be soldered to large PCB copper area for thermal management.
6, 7, 8	Gate (G)	Three parallel gate terminals minimize gate loop inductance and improve EMI performance during fast switching.

Key Features

Feature	Design Value
Low thermal resistance to PCB	<3.8 °C/W - Enables >10 W power dissipation with minimal board area, supporting high-density portable designs.
Low profile package	<1.05 mm height - Allows integration into ultra-thin consumer devices such as smartphones and wearables.
Industry-standard pinout	Compatible with multiple vendors' 3.3×3.3 mm PQFN footprints - Reduces redesign effort when qualifying second sources.
MSL1 qualification	Moisture sensitivity level 1 - Eliminates bake requirements before reflow, simplifying SMT manufacturing and improving yield.
RoHS & halogen-free	Compliant with IPC-1752A and JEDEC J-STD-020 - Meets global environmental regulations for consumer and industrial end products.

Applications

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Bidirectional overcurrent and short-circuit protection in Li-ion battery packs using integrated protection ICs.

IC Role / Device Role: Low-side main discharge switch controlled by battery management IC to interrupt fault current.

Use Value: 22.5 mΩ R_DS(on) at -4.5 V enables precise current sensing and low-loss cutoff without external level-shifting circuitry.

Use Scenario: USB-C port power path control enabling reversible plug insertion and dynamic power role swapping.

IC Role / Device Role: P-channel load switch managing V_BUS connection between source and sink during CC logic negotiation.

Use Value: Fast 27 ns rise time and 60 ns fall time support <100 µs power state transitions required by USB PD 3.0 specification.

Smartphone Power Management

Industrial Sensor Node Supply Control

Use Scenario: Controlled power-up/down sequencing of RF transceivers, cameras, and display modules in mobile handsets.

IC Role / Device Role: System-level load switch isolating subsystems during sleep mode to minimize quiescent current.

Use Value: -1.8 V typical V_GS(th) ensures clean turn-on with 1.8 V or 2.8 V PMIC outputs, eliminating need for gate boosters.

Use Scenario: Remote wireless sensor nodes powered by primary lithium batteries requiring decades-long shelf life and ultra-low leakage.

IC Role / Device Role: High-reliability load switch enabling firmware-controlled wake-up of MCU and analog front-end.

Use Value: -1.0 µA I_DSS at -24 V and -150 µA at 125°C ensures sub-100 nA system standby current, extending battery life beyond 10 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 20 mΩ @ -4.5 V; Q_g = 25 nC; same PQFN 3.3×3.3 package	Lower gate charge reduces driver loss but higher R_DS(on) increases conduction loss above 5 A	Select when prioritizing switching efficiency over continuous current handling in <5 A applications.
DMT3006LPS-13	R_DS(on) = 13.5 mΩ @ -10 V; no -4.5 V R_DS(on) specified; 1.1 mm height	Lacks verified logic-level drive performance; requires -10 V gate drive for rated R_DS(on)	Select only if full -10 V gate drive is available and lower profile (1.1 mm vs. 1.05 mm) is critical.

Compared with Si7157DP-T1-GE3 and DMT3006LPS-13, IRFHM9391TRPBF uniquely balances verified -4.5 V operation, low thermal resistance, and MSL1 reliability-making it optimal for space-constrained, battery-sensitive designs requiring both low conduction loss and robust manufacturability.

Availability

IRFHM9391TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, smartphone power management, and industrial sensor node supply control requiring stable component supply and long-term lifecycle support.

Supply support for IRFHM9391TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with strong IP in silicon-based power devices.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-profile DC power path control in portable and battery-operated systems where thermal density and logic-level drivability are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRFHM9391TRPBF supports -9.0 A continuous drain current at T_A = 70°C with V_GS = -10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under natural convection; actual current capability improves significantly with PCB copper area and airflow.

Does this MOSFET require a gate resistor for stability in switching applications?

A gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The device's three parallel gate pins reduce inductance, but external series resistance remains essential for EMI control and driver protection in high-speed switching.

Can IRFHM9391TRPBF be used in avalanche-rated circuits?

Yes-it is characterized for unclamped inductive switching with 75 mJ single-pulse avalanche energy at T_J = 25°C. However, repetitive avalanche operation is not guaranteed; design must ensure peak junction temperature stays within -55°C to +150°C and that energy per pulse does not exceed the SOA curve limits.

Is the exposed drain pad electrically isolated from other terminals?

No-the exposed drain pad (Pin 5) is internally connected to the MOSFET's drain terminal and must be soldered to a PCB copper pour tied to the system ground or negative rail. It serves as both the primary thermal path and the main drain current return path.

IRFHM9391TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14.6mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1543 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (3.3x3.3), Power33

IRFHM9391TRPBF FAQ

1.How can I place an order for IRFHM9391TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM9391TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM9391TRPBF reliable?

The price and inventory of IRFHM9391TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM9391TRPBF is usually 5 days.

3.What payment methods are accepted for IRFHM9391TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM9391TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM9391TRPBF?

IRFHM9391TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM9391TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM9391TRPBF?

For technical support, including IRFHM9391TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM9391TRPBF requirements.

6.How does Aetrix verify that IRFHM9391TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFHM9391TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM9391TRPBF meets industry standards.

7.What is the process for return or replacement of IRFHM9391TRPBF?

All IRFHM9391TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM9391TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM9391TRPBF part is unused and in its original packaging.

Return procedure for IRFHM9391TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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