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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHS8242TR2PBF

Name: IRFHS8242TR2PBF
Brand: Infineon Technologies
SKU: IRFHS8242TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFHS8242TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 6-PowerVDFN

Datasheet:: IRFHS8242TR2PBF.pdf

Description:: MOSFET N-CH 25V 9.9A PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFHS8242TR2PBF from Infineon Technologies is a 25 V, 8.5 A N-channel enhancement-mode HEXFET Power MOSFET in a 2 mm × 2 mm PQFN package with 13 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC conversion in space-constrained power stages.

For engineers reviewing the IRFHS8242TR2PBF datasheet, IRFHS8242TR2PBF pinout, IRFHS8242TR2PBF application, or IRFHS8242TR2PBF equivalent, key selection criteria include low thermal resistance (13 °C/W junction-to-case via bottom), fast switching (t_r = 19 ns, t_f = 5.3 ns), and integrated body diode performance (Q_rr = 11–17 nC, t_rr = 11–17 ns) in compact surface-mount form.

Technical Context

This MOSFET employs a trench-gate silicon process enabling low on-resistance and fast switching with minimal gate charge (Q_g = 4.3 nC at V_GS = 4.5 V). Its 2 mm × 2 mm PQFN package features exposed thermal pad on bottom side for direct PCB heat sinking.

The device integrates a robust intrinsic body diode rated for 8.5 A continuous source current and exhibits controlled reverse recovery (Q_rr = 11–17 nC), making it suitable for synchronous rectification and hard-switched topologies where diode conduction occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin.
R_DS(on) max @ V_GS = 10 V	13.0 mΩ - Conduction loss of ≤1.1 W at 8.5 A, enabling >95% efficiency in 5–12 V buck converters.
Q_g typ @ V_GS = 4.5 V	4.3 nC - Low gate drive energy reduces driver losses and enables operation with low-power gate drivers.
t_r/t_f	19 ns / 5.3 ns - Fast edge rates support >1 MHz switching without excessive EMI or shoot-through risk.
R_θJC (Bottom)	13 °C/W - Enables 8.5 W dissipation with ≤110 °C junction rise over 25 °C PCB temperature using standard 1 oz copper.
Body Diode Q_rr	11–17 nC - Predictable reverse recovery charge supports stable synchronous FET timing in buck and half-bridge phases.

Pinout & Package

Package: 2 mm × 2 mm PQFN with exposed thermal pad on bottom side; MSL1 rating; RoHS-compliant, halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Control terminal; requires 1.35–2.35 V threshold; driven by dedicated gate driver or controller output.
S (Pin 3 & Pin 4)	Source	Power return path; electrically tied to thermal pad; forms common reference for gate drive and load current sensing.
D (Pins 2, 5, 6)	Drain	Main power path; all three drain terminals are internally connected and bonded to top-side copper for low-inductance current routing.

Key Features

Feature	Design Value
Low R_DS(on)	13.0 mΩ max at 10 V gate drive - reduces I²R losses in high-current, low-voltage power stages.
Low R_θJC (Bottom)	13 °C/W - allows direct thermal coupling to inner-layer or external heatsink via PCB copper area.
Low-profile package	≤1.0 mm height - fits under 1.2 mm height constraints in ultra-thin portable and telecom modules.
MSL1 industrial qualification	Unlimited floor life at ≤30 °C/60% RH - eliminates bake requirements before reflow assembly.

Applications

Point-of-Load DC-DC Converter

USB-C PD Power Delivery Module

Use Scenario: High-density 5–20 V input to 3.3/5/9/15 V output buck regulator delivering up to 10 A in <100 mm² footprint.

IC Role / Device Role / Timing Role: Synchronous high-side switch; commutates at 500 kHz–1.2 MHz with precise dead-time control.

Use Value: 13 mΩ R_DS(on) and 4.3 nC Q_g enable >96% peak efficiency and minimal self-heating at full load.

Use Scenario: Dual-phase USB-C PD sink implementation supporting 60 W (20 V/3 A) with dynamic voltage scaling.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck-boost topology; conducts during freewheeling phase with body diode assist.

Use Value: Controlled Q_rr (11–17 nC) and low V_SD (<1.0 V) minimize reverse recovery loss and conduction drop in bidirectional power flow.

Telecom Base Station PSU

Industrial Motor Drive Half-Bridge

Use Scenario: 48 V intermediate bus converter feeding 12 V/24 V subsystems in fanless 1U rack units.

IC Role / Device Role / Timing Role: Primary-side switching FET in isolated forward or active-clamp forward topology.

Use Value: 25 V V_DS rating with 20 % margin over 48 V nominal bus ensures safe operation during line transients up to 60 V.

Use Scenario: 24 V BLDC gate driver stage controlling 3-phase inverter for <100 W brushless motors in factory automation.

IC Role / Device Role / Timing Role: Low-side leg switch in half-bridge configuration; switched at ≤20 kHz with PWM duty cycle modulation.

Use Value: 8.5 A continuous current capability at T_C(bottom) = 70 °C supports 3× motor stall current peaks without derating.

Availability

IRFHS8242TR2PBF is available at Aetrix Electronics and suitable for point-of-load DC-DC converters, USB-C PD modules, telecom power supplies, and industrial motor drive half-bridges requiring stable component supply and long-term production continuity.

Supply support for IRFHS8242TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-density power conversion in consumer, computing, and communications infrastructure.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRFHS8242TR2PBF supports 8.0 A continuous drain current at T_A = 70°C with standard PCB layout (1 inch² copper). This rating assumes V_GS = 10 V and accounts for thermal derating due to ambient temperature rise and PCB thermal resistance.

Is this MOSFET suitable for synchronous rectification in buck converters?

Yes - its low R_DS(on) (13 mΩ), fast switching (t_r/t_f = 19/5.3 ns), and well-characterized body diode (Q_rr = 11–17 nC, t_rr = 11–17 ns) make it appropriate for low-voltage synchronous rectification in buck converters operating up to 1.2 MHz.

What is the gate threshold voltage range and how does it affect drive compatibility?

V_GS(th) is specified from 1.35 V to 2.35 V at T_J = 25°C. This allows reliable turn-on with 3.3 V logic-level drivers while maintaining noise immunity; full enhancement occurs at ≥4.5 V, ensuring low R_DS(on) in standard gate-drive configurations.

Does the PQFN package require special PCB layout considerations for thermal performance?

Yes - the exposed thermal pad must be soldered to a minimum 10 mm² copper pour on the PCB's inner or bottom layer, connected via ≥4 thermal vias (0.3 mm diameter) to internal ground planes. This achieves the rated 13 °C/W R_θJC(bottom) and prevents junction overheating at full current.

IRFHS8242TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 6-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 9.9A (Ta), 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 13mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 10.4 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 653 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-PQFN (2x2)

IRFHS8242TR2PBF FAQ

1.How can I place an order for IRFHS8242TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHS8242TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHS8242TR2PBF reliable?

The price and inventory of IRFHS8242TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHS8242TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFHS8242TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHS8242TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHS8242TR2PBF?

IRFHS8242TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHS8242TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHS8242TR2PBF?

For technical support, including IRFHS8242TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHS8242TR2PBF requirements.

6.How does Aetrix verify that IRFHS8242TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFHS8242TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHS8242TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFHS8242TR2PBF?

All IRFHS8242TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHS8242TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHS8242TR2PBF part is unused and in its original packaging.

Return procedure for IRFHS8242TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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